公开(公告)号：US06885540B2

公开(公告)日：2005-04-26

申请号：US10375897

申请日：2003-02-26

申请人： Yukio Sakashita

发明人： Yukio Sakashita

IPC分类号： C01G29/00 ,  H01G4/005 ,  H01G4/008 ,  H01G4/12 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/02 ,  H01L23/522 ,  H01L27/01 ,  H01L27/04 ,  H01L27/06

CPC分类号： H01G4/1218 ,  H01G4/008 ,  H01G4/33 ,  H01L23/5223 ,  H01L27/016 ,  H01L27/0688 ,  H01L28/57 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed of silicon oxide on the support substrate, an electrode layer, which is formed of BSCCO (bismuth strontium calcium copper oxide) having a stoichiometric composition represented by Bi2Sr2CaCu2O8, having an anisotropic property and conductivity and enabling epitaxial growth of a dielectric material containing a bismuth layer structured compound thereon and is oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 on the electrode layer and oriented in the c axis direction on the electrode layer.

摘要翻译： 根据本发明的多层单元包括由硅单晶形成的支撑衬底，在支撑衬底上由氧化硅形成的阻挡层，由BSCCO（铋锶钙铜氧化物）形成的电极层，其具有 由Bi 2 Sr 2 Ca Ca 2 O 3 O 8表示的化学计量组成，具有各向异性特性和导电性，并且能够实现 包含其上的铋层结构化合物并且在c轴方向取向的介电材料的外延生长，以及通过外延生长含有由SrBi 4表示的组成的铋层结构化合物的介电材料形成的电介质层， 在电极层上，在电极层上沿c轴方向取向。

公开(公告)号：US20050040516A1

公开(公告)日：2005-02-24

申请号：US10331140

申请日：2002-12-27

申请人： Yukio Sakashita ,  Kyung-Ku Choi

发明人： Yukio Sakashita ,  Kyung-Ku Choi

IPC分类号： H01G4/10 ,  H01G4/12 ,  H01G4/228 ,  H01G4/32 ,  H01G4/33 ,  H01L21/02 ,  H01L27/01 ,  H01L29/76

CPC分类号： H01G4/33 ,  H01G4/10 ,  H01G4/228 ,  H01L27/016 ,  H01L28/57 ,  H01L28/65

摘要： A thin film capacitor according to the present invention includes a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first electrode structural body and the second electrode structural body and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the orientation of the bismuth layer structured compound contained in the dielectric thin film in the [001] direction, namely, the c axis direction thereof, can be improved. Therefore, when a voltage is applied between the first electrode structural body and the second electrode structural body, since the direction of the electric field substantially coincides with the c axis of bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, since a bismuth oxide layer (Bi2O2)2+ functions as an insulating layer, the insulation property of the dielectric thin film can be improved, whereby the dielectric thin film can be made much thinner. Since it is therefore possible to simultaneously make a thin film capacitor small and the capacitance thereof great, the thin film capacitor can be preferably used as a decoupling capacitor, in particular, a decoupling capacitor for an LSI having a high operating frequency.

摘要翻译： 根据本发明的薄膜电容器包括第一电极结构体，第二电极结构体和设置在第一电极结构体和第二电极结构体之间并且含有铋层结构化合物的电介质薄膜。 与电介质薄膜接触的第一电极结构体的表面在[001]方向上取向。 结果，可以提高包含在电介质薄膜中的[001]方向即其c轴方向的铋层结构化合物的取向。 因此，当在第一电极结构体和第二电极结构体之间施加电压时，由于电场方向基本上与铋层结构化合物的c轴重合，所以可以防止铋层结构化合物表现出 铁电性能充分显现出顺电特性。 此外，由于氧化铋层（Bi 2 O 2）2+作为绝缘层发挥功能，所以能够提高电介质薄膜的绝缘性，能够使电介质薄膜变薄。 因此，由于可以同时使薄膜电容器小而且容量大，因此薄膜电容器可以优选用作去耦电容器，特别是用于具有高工作频率的LSI的去耦电容器。

公开(公告)号：US08151727B2

公开(公告)日：2012-04-10

申请号：US12414125

申请日：2009-03-30

申请人： Tsutomu Sasaki ,  Yukio Sakashita

发明人： Tsutomu Sasaki ,  Yukio Sakashita

IPC分类号： C23C14/00 ,  H01L41/18 ,  H01L41/187 ,  B41J2/045

CPC分类号： H01L41/0973 ,  C23C14/08 ,  H01L41/0815 ,  H01L41/1878 ,  H01L41/316

摘要： A film formed on a substrate different from the monocrystalline perovskite substrate contains a piezoelectric oxide expressed as A(BxC1-x)O3 other than Bi(FeySc1-y)O3 and Bi(Fe, Co)O3, where 0

摘要翻译： 形成在不同于单晶钙钛矿衬底的衬底上的膜包含除了Bi（FeySc1-y）O3和Bi（Fe，Co）O3表示为A（BxC1-x）O3的压电氧化物，其中0

公开(公告)号：US07918542B2

公开(公告)日：2011-04-05

申请号：US11898621

申请日：2007-09-13

申请人： Yukio Sakashita ,  Tsutomu Sasaki

发明人： Yukio Sakashita ,  Tsutomu Sasaki

IPC分类号： B41J2/045 ,  C01B13/00

CPC分类号： H01L41/1871 ,  B41J2/14233 ,  C04B35/2683 ,  C04B35/457 ,  C04B2235/3234 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/762 ,  C04B2235/768 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/1878 ,  H01L41/316 ,  H01L41/43

摘要： A process for producing a piezoelectric oxide having a composition (A, B, C) (D, E, F)O3, where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4), 0.98≦TF(P)≦1.01,  (1) TF(ADO3)>1.0,  (2) TF(BEO3)

摘要翻译： 制备具有组成（A，B，C）（D，E，F）O 3的压电氧化物的方法，其中A，B，C，D，E和F各自表示一种或多种金属元素。 确定组合物以满足条件（1），（2），（3）和（4），0.98＆nlE; TF（P）＆nlE; 1.01，（1）TF（ADO3）> 1.0，（2 ）TF（BEO3）<1.0，和（3）TF（BEO3）

公开(公告)号：US07830073B2

公开(公告)日：2010-11-09

申请号：US11802705

申请日：2007-05-24

申请人： Yukio Sakashita ,  Takamichi Fujii ,  Yuuichi Okamoto

发明人： Yukio Sakashita ,  Takamichi Fujii ,  Yuuichi Okamoto

IPC分类号： H01L41/24

CPC分类号： B41J2/14201 ,  B41J2202/03 ,  C01G25/00 ,  C01G25/006 ,  C01G33/006 ,  C01P2002/34 ,  C01P2002/77 ,  C01P2006/40 ,  C04B35/491 ,  C04B2235/3251 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  H01L41/187 ,  H01L41/1871 ,  H01L41/1875

摘要： A perovskite oxide is represented by a general formula ABO3 A represents at least one kind of metal element forming an A site, B represents at least one kind of metal element forming a B site. The B site includes at least one kind of metal element B1 selected from an element group consisting of the IV group elements and at least one kind of metal element B2 selected from an element group consisting of the V and VI group elements, and at least a part of the metal element B2 is of the 0 to +4 valence.

摘要翻译： 钙钛矿氧化物由通式ABO3表示A表示形成A位点的至少一种金属元素，B表示形成B位点的至少一种金属元素。 B位置包括选自由IV族元素组成的元素群中的至少一种金属元素B1和选自由V族和VI族元素构成的元素族中的至少一种金属元素B2，以及至少一种 金属元素B2的一部分为0〜+4价。

公开(公告)号：US20100186487A1

公开(公告)日：2010-07-29

申请号：US12676064

申请日：2008-09-10

申请人： Yukio Sakashita

发明人： Yukio Sakashita

IPC分类号： G01N5/02

CPC分类号： G01N33/5438

摘要： The cantilever-type sensor detects a substance to be measured as it is contained in a liquid. The sensor includes a cantilever that is fixed at least at an end to a support section and which has a channel formed inside, a piezoelectric device that is composed of a piezoelectric element and electrode sections formed on opposite sides of the piezoelectric element and which is positioned on at least one side of the cantilever, a drive section that applies a voltage to the electrode sections of the piezoelectric device so as to vibrate the cantilever, a detecting section that detects vibration of the cantilever from expansion or contraction of the piezoelectric device and a liquid supply unit for flowing the liquid through the channel in the cantilever. The cantilever-type sensor features high precision in measurement and is compact and less costly.

摘要翻译： 悬臂式传感器检测被包含在液体中的被测物质。 传感器包括至少在支撑部分固定并具有形成在内部的通道的悬臂，由压电元件和形成在压电元件的相对侧上的电极部分组成的压电装置， 在所述悬臂的至少一侧，具有向所述压电装置的电极部施加电压以使所述悬臂振动的驱动部，检测所述悬臂的振动从所述压电装置的膨胀或收缩的振动，以及 液体供应单元，用于使液体流过悬臂中的通道。 悬臂式传感器测量精度高，结构紧凑，成本较低。

公开(公告)号：US07580241B2

公开(公告)日：2009-08-25

申请号：US11578778

申请日：2005-04-26

申请人： Yukio Sakashita

发明人： Yukio Sakashita

IPC分类号： H01G4/06

CPC分类号： C04B35/475 ,  C04B35/462 ,  C04B35/47 ,  C04B2235/3213 ,  C04B2235/3227 ,  C04B2235/3298 ,  C04B2235/441 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/787 ,  H01G4/1209 ,  H01G4/33 ,  Y10T29/435

摘要： A thin film capacitor element composition having a bismuth layered compound with a c-axis oriented substantially vertical to the substrate surface, wherein the bismuth layered compound is expressed by the formula (Bi2O2)2+(Am−1BmO3m+1)2− or Bi2Am−1BmO3M+3, the symbol m in the formula is an odd number, at least part of the Bi and/or A of the bismuth layered compound is substituted by a rare earth element, and the number of moles substituted by the rare earth element is larger than 1.0 and 2.8 or less with respect to the number of moles (m+1) of the total of Bi and A.

摘要翻译： 一种薄膜电容器元件组合物，其具有基本上垂直于基板表面的c轴的铋层状化合物，其中所述铋层状化合物由式（Bi 2 O 2）2+（Am-1BmO 3 m + 1）2或Bi 2 Am -1BmO3M + 3，式中的符号m为奇数，铋层状化合物的Bi和/或A的至少一部分被稀土元素代替，并且被稀土元素取代的摩尔数 相对于Bi和A的总量的摩尔数（m + 1）大于1.0和2.8或更小。

公开(公告)号：US20090085445A1

公开(公告)日：2009-04-02

申请号：US12243701

申请日：2008-10-01

申请人： Hiroyuki KOBAYASHI ,  Yukio Sakashita ,  Tsutomu Sasaki

发明人： Hiroyuki KOBAYASHI ,  Yukio Sakashita ,  Tsutomu Sasaki

IPC分类号： H01L41/00 ,  B32B9/04

CPC分类号： B41J2/14233 ,  B41J2002/14258 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1878

摘要： A perovskite-oxide lamination constituted by a substrate and one or tore first films of a first oxide of a perovskite type and one or more second films of a second oxide which are alternately formed over the substrate. The first oxide has a composition expressed as ABO3, the second oxide has a composition expressed as CDO3, each of A and C represents one or more A-site elements which are one or more metal elements, each of B and D represents one or more B-site elements which are one or more metal elements, O represents oxygen, and the second oxide is unable to be formed to have a perovskite crystal structure at normal pressure without a thickness limitation. The one or more first films and the one or more second films may contain inevitable impurities.

摘要翻译： 一种钙钛矿氧化物层叠体，由基板和交替形成在基板上的第一氧化钙钙钛矿型氧化物和一种或多种第二氧化物膜的第一膜或第一膜构成。 第一氧化物具有表示为ABO 3的组成，第二氧化物具有表示为CDO 3的组成，A和C各自表示作为一种或多种金属元素的一个或多个A位元素，B和D各自表示一个或多个 作为一种或多种金属元素的B位元素，O表示氧，并且第二氧化物不能形成为在常压下具有钙钛矿晶体结构而没有厚度限制。 一个或多个第一膜和一个或多个第二膜可能含有不可避免的杂质。

公开(公告)号：US20080075927A1

公开(公告)日：2008-03-27

申请号：US11664080

申请日：2006-06-05

申请人： Yukio Sakashita

发明人： Yukio Sakashita

IPC分类号： B32B3/00 ,  B05D3/00 ,  B05D3/10 ,  B05D5/12 ,  B32B9/04 ,  B32B15/04 ,  B32B17/06

CPC分类号： H01L21/76251 ,  Y10T428/24612 ,  Y10T428/31504 ,  Y10T428/31678

摘要： A method of manufacturing a functional film by which a functional film formed on a film formation substrate can be easily peeled from the film formation substrate. The method includes the steps of: (a) forming a separation layer (102) on a substrate (101); (b) forming a layer to be peeled (103, 105, 106) containing a functional film (103, 105b, 106a), which is formed by using a functional material, on the separation layer (102); and (c) applying an external force to the separation layer (102) to produce fracture within the separation layer (102) or at an interface thereof so as to peel the layer to be peeled (103, 105, 106) from the substrate (101) or reduce bonding strength between the layer to be peeled (103, 105, 106) and the substrate (101).

摘要翻译： 可以容易地从成膜基板剥离形成在成膜基板上的功能膜的功能膜的制造方法。 该方法包括以下步骤：（a）在基底（101）上形成分离层（102）; （b）在分离层（102）上形成含有通过使用功能材料形成的功能膜（103,105b，106a）的被剥离层（103,105,106）; 和（c）向分离层（102）施加外力以在分离层（102）内或其界面处产生断裂，从而剥离被剥离层（103,105,106）从基底（ 101）或降低被剥离层（103,105,106）与基板（101）之间的接合强度。

公开(公告)号：US07319081B2

公开(公告)日：2008-01-15

申请号：US10547134

申请日：2003-11-18

申请人： Yukio Sakashita ,  Hiroshi Funakubo

发明人： Yukio Sakashita ,  Hiroshi Funakubo

IPC分类号： C04B35/475 ,  H01L29/76

CPC分类号： H01G4/33 ,  H01G4/1218 ,  H01G4/20 ,  H01L21/31691

摘要： A thin film capacity element composition includes a first bismuth layer-structured compound having positive temperature characteristics, that a specific permittivity rises as the temperature rises, in at least a part of a predetermined temperature range and a second bismuth layer-structured compound having negative temperature characteristics, that a specific permittivity declines as a temperature rises, in at least a part of said predetermined temperature range at any mixing ratio; wherein the bismuth layer-structured compound is expressed by a composition formula of CaxSr(1-x)Bi4Ti4O15.

摘要翻译： 薄膜电容元件组合物包括具有正温度特性的第一铋层结构化合物，在预定温度范围的至少一部分中比电容率随温度升高而升高，第二铋层结构化合物具有负温度 在所述预定温度范围的任何混合比的至少一部分中，相对介电常数随着温度升高而降低的特性; 其中所述铋层结构化合物由以下组成式表示：Ca x Sr 1（1-x）2 Bi 4 Si 4 15 。