公开(公告)号：US5326092A

公开(公告)日：1994-07-05

申请号：US1098

申请日：1993-01-06

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: B65H5/06 ,  B65H5/00

CPC classification number: B65H5/062 ,  B65H2601/11

Abstract: An apparatus for conveying a paper along a paper conveying path, the apparatus includes a pair of guide plates for guiding a paper in the paper conveying path, the guide plates being movable between a first position located in the paper conveying path and a second position located out of the paper conveying path and a roller located in the paper conveying path for conveying the paper. The roller is rotated in response to the moving of the guide plates from the first position to the second position so that the paper in the paper conveying path is fed from the guide plates.

Abstract translation: 一种用于沿着纸张输送路径输送纸张的装置，该装置包括一对用于在纸张传送路径中引导纸张的引导板，所述引导板可在位于纸张传送路径中的第一位置和位于纸张传送路径的第二位置之间移动 从纸张输送路径出来的辊和位于纸张输送路径中的用于输送纸张的辊。 响应于引导板从第一位置移动到第二位置，辊被旋转，使得纸张输送路径中的纸从引导板进给。

公开(公告)号：US07773428B2

公开(公告)日：2010-08-10

申请号：US12000425

申请日：2007-12-12

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: G11C16/04

CPC classification number: H01L29/792 ,  G11C16/0416 ,  G11C16/0425 ,  G11C16/0466 ,  G11C16/10 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/7885 ,  H01L29/7923

Abstract: An NMOS transistor type nonvolatile semiconductor memory has first and second N-type diffusion layers formed in a P-type silicon layer as a source and a drain; a gate electrode formed on a channel region with an insulating film interposed therebetween, the channel region being sandwiched between the first and second N-type diffusion layers; and a charge storage layer formed in the insulating film. A direction from the first N-type diffusion layer to the second N-type diffusion layer is the same as a crystal orientation of the P-type silicon layer. At the time of rewriting, the hot holes go over a potential barrier of the insulating film to be injected into the charge storage layer.

Abstract translation: NMOS晶体管型非易失性半导体存储器具有形成在作为源极和漏极的P型硅层中的第一和第二N型扩散层; 形成在其间具有绝缘膜的沟道区上的栅电极，所述沟道区被夹在所述第一N型扩散层和所述第二N型扩散层之间; 以及形成在绝缘膜中的电荷存储层。 从第一N型扩散层到第二N型扩散层的方向与P型硅层的晶体取向<100>相同。 在重写时，热孔穿过要注入电荷存储层的绝缘膜的势垒。

公开(公告)号：US20070031643A1

公开(公告)日：2007-02-08

申请号：US11498851

申请日：2006-08-04

Applicant: Koji Yakata ,  Nobuyuki Ukai ,  Shinsuke Yuri ,  Shinji Hisatugu ,  Yoshitugu Yamashita ,  Hisao Takahashi ,  Koichi Ando

Inventor： Koji Yakata ,  Nobuyuki Ukai ,  Shinsuke Yuri ,  Shinji Hisatugu ,  Yoshitugu Yamashita ,  Hisao Takahashi ,  Koichi Ando

IPC: B32B1/00

CPC classification number: B60R13/02 ,  B60R2013/0287 ,  Y10T428/24736

Abstract: There is provided a panel structure for an electronic apparatus that is capable of exhibiting two types of design images. During daytime hours for example, a design-applied portion of a panel main body can be visually recognized through a panel made of a light transmitting material. During nighttime hours for example, when light is conducted from one X direction-wise end to the other x direction-wise end in the panel, as well as from the other x direction-wise end to one X direction-wise end in the panel 1, the design-applied portion is shielded with the light illuminating the panel. In this way, by making a difference between the daytime visual impression and the nighttime visual impression of the panel, it is possible to impart two types of design images to the panel structure.

Abstract translation: 提供了一种能够呈现两种设计图像的电子设备的面板结构。 例如在白天工作时，可以通过由透光材料制成的面板来目视识别面板主体的设计应用部分。 例如，在夜间时间，当光从面板中的一个X方向端到另一个x方向端，以及从面板中的另一x方向端到一个X方向端 如图1所示，设计施加部分被照射面板的光屏蔽。 以这种方式，通过在日间视觉印象和面板的夜间视觉印象之间做出区别，可以向面板结构赋予两种类型的设计图像。

公开(公告)号：US20050230743A1

公开(公告)日：2005-10-20

申请号：US11070150

申请日：2005-03-03

Applicant: Kenichiro Nakagawa ,  Tomohiro Hamajima ,  Koichi Ando

Inventor： Kenichiro Nakagawa ,  Tomohiro Hamajima ,  Koichi Ando

IPC: H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/11546 ,  H01L29/42332 ,  H01L29/7885

Abstract: A non-volatile semiconductor memory device includes a substrate, a first insulating film formed on the substrate, a second insulating film formed on the first insulating film, a plurality of granular dots formed in the second insulating film adjacent to the first insulating film as a floating gate, and a control gate formed on the second insulating film. The second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of the first insulating film and whose heat of formation is higher than that of silicon oxide.

Abstract translation: 非易失性半导体存储器件包括：基板，形成在基板上的第一绝缘膜，形成在第一绝缘膜上的第二绝缘膜，形成在与第一绝缘膜相邻的第二绝缘膜中的多个颗粒点， 浮栅和形成在第二绝缘膜上的控制栅。 第二绝缘膜是介电常数高于第一绝缘膜的氧化物的高介电常数膜，其形成热高于氧化硅。

公开(公告)号：US06879414B2

公开(公告)日：2005-04-12

申请号：US09773531

申请日：2001-02-02

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: G03G15/04 ,  H04N1/028 ,  H04N1/10 ,  H04N1/193 ,  H04N1/04

CPC classification number: H04N1/0287 ,  G03G15/04072 ,  H04N1/02815 ,  H04N1/1013 ,  H04N1/1026 ,  H04N1/1056 ,  H04N1/193 ,  H04N2201/02495 ,  H04N2201/0446

Abstract: A scanner unit has first and second carriages under an original table glass. The first carriage has a first frame extending from a front side to a rear side along the original table, that is, in a main scan direction. Two rails for supporting both end portions of the first frame such that the first frame may slide in a sub-scan direction are provided on the front side and rear side of the scanner unit. A cold cathode fluorescent lamp is mounted on the first frame. In order to make a high-voltage-side harness of the cold cathode fluorescent lamp as short as possible, an inverter circuit board, which is a lighting circuit, is disposed as close as possible to a positive electrode of the cold cathode fluorescent lamp. A weight is attached on a side opposite to the inverter circuit board, thereby to stabilize a weight balance of the first frame in the main scan direction.

Abstract translation: 扫描器单元具有在原始桌面玻璃下方的第一和第二托架。 第一滑架具有沿着原始工作台，即在主扫描方向上从正面向后侧延伸的第一框架。 在扫描器单元的前侧和后侧设置有用于支撑第一框架的两个端部以使得第一框架可沿副扫描方向滑动的两个轨道。 冷阴极荧光灯安装在第一框架上。 为了使冷阴极荧光灯的高压侧线束尽可能短，作为点亮电路的逆变器电路基板尽可能靠近冷阴极荧光灯的正极配置。 在与逆变器电路板相对的一侧安装有重物，从而稳定第一框架在主扫描方向上的重量平衡。

公开(公告)号：US06845911B2

公开(公告)日：2005-01-25

申请号：US10289179

申请日：2002-11-07

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H04N1/028 ,  H04N1/10 ,  H04N1/193 ,  G06K7/10

CPC classification number: H04N1/0285 ,  H04N1/02815 ,  H04N1/0287 ,  H04N1/1013 ,  H04N1/193

Abstract: A scanner unit is provided, which can make the amounts of light directed to a read line from the opposite sides of the optic axis plane substantially the same, thereby preventing a shade due to an edge of an attachment portion on a document form occurring.In the scanner unit of the present invention, the carriage mirror 23 and the second carriage 12 of the optical reading device read a document by scanning read lines LL on the document in the scanning direction (R, F) and using light reflected from the document along an optic axis plane PP which contains the read line and extends in perpendicular relation to a document glass table. An exposure lamp 21 and a reflector 22 forming an illumination device illuminate the read line from both sides of the optic axis plane with the light passing along light path L10, L11 and the light passing along light path L20, L21, respectively. An light amount adjusting member, e.g., a filter 25, reduces the amount of light passing along the light path L10, L11 so that the amounts of illumination light directed from both sides of the optic axis plane are made substantially the same at the read line, thereby preventing a shade when reading an edge of an attachment portion on the document.

Abstract translation: 提供了一种扫描器单元，其可以使得从光轴平面的相对侧引导到读取线的光量基本相同，从而防止由于文档形式上的附接部分的边缘而发生的阴影。 本发明的扫描器单元，光学读取装置的托架反射镜23和第二托架12通过沿扫描方向（R，F）扫描原稿上的读取线LL并使用从文档反射的光来读取文档 光轴平面PP，其包含读取线并且垂直于文件玻璃台延伸。 形成照明装置的曝光灯21和反射器22分别沿着光路L10，L11和沿着光路L20，L21通过的光沿光轴平面的两侧照亮读取线。 光量调节构件（例如滤光器25）减少沿着光路L10，L11通过的光量，使得从光轴平面的两侧引导的照明光的量在读取线上基本相同 从而当读取文件上的附接部分的边缘时防止阴影。

公开(公告)号：US06614081B2

公开(公告)日：2003-09-02

申请号：US09824672

申请日：2001-04-04

Applicant: Mariko Makabe ,  Shin Koyama ,  Koichi Ando

Inventor： Mariko Makabe ,  Shin Koyama ,  Koichi Ando

IPC: H01L2976

CPC classification number: H01L21/28202 ,  H01L29/512 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: A Metal Oxide Semiconductor (MOS) transistor includes a gate insulating film disposed on a surface of a silicon substrate. The gate insulating film has a central portion formed on the silicon substrate and comprising a nitride insulating film, and an end portion located on each side of the central portion, the end portion being thicker than the central portion and formed of an oxide insulating film. The MOS transistor also includes a p-type gate electrode formed on the gate insulating film, sidewalls formed on both sides of the gate insulating film and the gate electrode, a pair of p-type source/drain areas formed in surface portions of the silicon substrate, and a channel area located between the pair of source/drain areas.

Abstract translation: 金属氧化物半导体（MOS）晶体管包括设置在硅衬底的表面上的栅极绝缘膜。 栅极绝缘膜具有形成在硅衬底上并包括氮化物绝缘膜的中心部分和位于中心部分的每一侧上的端部，其端部比中心部分厚，并由氧化物绝缘膜形成。 MOS晶体管还包括形成在栅极绝缘膜上的p型栅极电极，形成在栅极绝缘膜和栅电极两侧的侧壁，形成在硅的表面部分中的一对p型源极/漏极区域 衬底和位于一对源/漏区之间的沟道区。

公开(公告)号：US5349494A

公开(公告)日：1994-09-20

申请号：US920921

申请日：1992-07-28

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/318 ,  H01L21/321 ,  H01L21/822 ,  H01L29/49 ,  H01G4/10 ,  H01L21/70

CPC classification number: H01L28/40 ,  H01L21/3185 ,  H01L29/4908 ,  H01L21/3143 ,  H01L21/3211

Abstract: A semiconductor device has a capacitor insulating film composed of a first and a second silicon nitride film. The surface of a lower electrode of impurity-doped polysilicon is transformed into the first silicon nitride film by thermal nitriding, and thereafter the second silicon nitride film is formed by chemical vapor deposition. An upper electrode is formed on the second silicon nitride film. A silicon oxide film may be formed on the second silicon nitride film by thermal oxidation. The capacitor insulating film which has a thickness of 5 nm or less in equivalent thickness of an oxide film reduces a leakage current and improves a long-term product reliability.

Abstract translation: 半导体器件具有由第一和第二氮化硅膜构成的电容器绝缘膜。 通过热氮化将杂质掺杂多晶硅的下电极的表面转变成第一氮化硅膜，然后通过化学气相沉积形成第二氮化硅膜。 在第二氮化硅膜上形成上电极。 可以通过热氧化在第二氮化硅膜上形成氧化硅膜。 厚度为5nm以下的电容绝缘膜的氧化膜的当量厚度减小了泄漏电流，提高了长期的产品可靠性。

公开(公告)号：US20080144394A1

公开(公告)日：2008-06-19

申请号：US12000425

申请日：2007-12-12

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: G11C11/34 ,  H01L29/788

CPC classification number: H01L29/792 ,  G11C16/0416 ,  G11C16/0425 ,  G11C16/0466 ,  G11C16/10 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/7885 ,  H01L29/7923

Abstract: An NMOS transistor type nonvolatile semiconductor memory has first and second N-type diffusion layers formed in a P-type silicon layer as a source and a drain; a gate electrode formed on a channel region with an insulating film interposed therebetween, the channel region being sandwiched between the first and second N-type diffusion layers; and a charge storage layer formed in the insulating film. A direction from the first N-type diffusion layer to the second N-type diffusion layer is the same as a crystal orientation of the P-type silicon layer. At the time of rewriting, the hot holes go over a potential barrier of the insulating film to be injected into the charge storage layer.

Abstract translation: NMOS晶体管型非易失性半导体存储器具有形成在作为源极和漏极的P型硅层中的第一和第二N型扩散层; 形成在其间具有绝缘膜的沟道区上的栅电极，所述沟道区被夹在所述第一N型扩散层和所述第二N型扩散层之间; 以及形成在绝缘膜中的电荷存储层。 从第一N型扩散层到第二N型扩散层的方向与P型硅层的晶体取向<100>相同。 在重写时，热孔穿过要注入电荷存储层的绝缘膜的势垒。

公开(公告)号：US07071512B2

公开(公告)日：2006-07-04

申请号：US11070150

申请日：2005-03-03

Applicant: Kenichiro Nakagawa ,  Tomohiro Hamajima ,  Koichi Ando

Inventor： Kenichiro Nakagawa ,  Tomohiro Hamajima ,  Koichi Ando

IPC: H01L29/792

CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/11546 ,  H01L29/42332 ,  H01L29/7885

Abstract: A non-volatile semiconductor memory device includes a substrate, a first insulating film formed on the substrate, a second insulating film formed on the first insulating film, a plurality of granular dots formed in the second insulating film adjacent to the first insulating film as a floating gate, and a control gate formed on the second insulating film. The second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of the first insulating film and whose heat of formation is higher than that of silicon oxide.

Abstract translation: 非易失性半导体存储器件包括：基板，形成在基板上的第一绝缘膜，形成在第一绝缘膜上的第二绝缘膜，形成在与第一绝缘膜相邻的第二绝缘膜中的多个颗粒点， 浮栅和形成在第二绝缘膜上的控制栅。 第二绝缘膜是介电常数高于第一绝缘膜的氧化物的高介电常数膜，其形成热高于氧化硅。