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公开(公告)号：US20180335341A1
公开(公告)日：2018-11-22
申请号：US15926366
申请日：2018-03-20
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
Inventor： Seung Hyub BAEK , Tae Hyeon KIL , Sanghyeon KIM , Won Jun CHOI , Jeong Min BAIK , Ki-Suk LEE
Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.
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公开(公告)号：US20160365501A1
公开(公告)日：2016-12-15
申请号：US15158158
申请日：2016-05-18
Applicant: Korea Institute of Science and Technology
Inventor： Chong Yun KANG , Seok Jin YOON , Jin Sang KIM , Ji-Won CHOI , Seung Hyub BAEK , Seong Keun KIM , Woo-Suk JUNG , Beomjin KWON
IPC: H01L41/053 , H01L41/18 , H01L41/113
CPC classification number: H01L41/113
Abstract: Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by y1 and y2 of Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein y 1 = E 2 d 2 ( d 1 + d 2 ) 2 ( E 1 d 1 + E 2 d 2 ) , y 2 = E 1 d 1 ( d 1 + d 2 ) 2 ( E 1 d 1 + E 2 d 2 ) and Equation 1 y 1 = E 2 A 2 ( A 1 + A 2 ) 2 ( E 1 A 1 + E 2 A 2 ) , y 2 = E 1 A 1 ( A 1 + A 2 ) 2 ( E 1 A 1 + E 2 A 2 ) . Equation 2
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公开(公告)号：US20140048796A1
公开(公告)日：2014-02-20
申请号：US13774722
申请日：2013-02-22
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Seung Hyub BAEK , Shin Ik KIM , Jin Sang KIM , Ji Won CHOI , Seok Jin YOON , Chong Yun KANG
IPC: H01L29/778 , H01L29/66
CPC classification number: H01L29/778 , H01L29/24 , H01L29/408 , H01L29/516 , H01L29/66969 , H01L29/7786
Abstract: Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.
Abstract translation: 提供一种氧化物电子器件，包括：氧化物衬底; 氧化物薄膜层，其形成在所述氧化物基板上并且含有相对于所述氧化物基板为异质的氧化物; 以及形成在所述氧化物薄膜层上并且控制在所述氧化物衬底和所述氧化物薄膜层之间的界面处产生的二维电子气（2DEG）的导电性的铁电层。 还提供了一种氧化物电子器件的制造方法，包括：在氧化物衬底上沉积相对于氧化物衬底是异质的氧化物以形成氧化物薄膜层; 以及在所述氧化物薄膜层上形成铁电体层，其中所述铁电体层控制在所述氧化物基板和所述氧化物薄膜层之间的界面处产生的2DEG的导电性。
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Patent Agency Ranking
14.发明公开公开(公告)号：US20240180043A1
公开(公告)日：2024-05-30
申请号：US18511720
申请日：2023-11-16
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Seung Hyub BAEK , Min Seok KIM , Ji-Soo JANG , Sunghoon HUR , Jungho YOON , Hyun-Cheol SONG , Seong Keun KIM , Ji-Won CHOI , Jin Sang KIM , Chong Yun KANG
IPC: H10N39/00
CPC classification number: H10N39/00
Abstract: Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.
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公开(公告)号：US20220086961A1
公开(公告)日：2022-03-17
申请号：US17475346
申请日：2021-09-15
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Ji-Won CHOI , Jin Sang KIM , Chong Yun KANG , Seung Hyub BAEK , Seong Keun KIM , Hyun-Cheol SONG , Jungho YOON , Joohee JANG
Abstract: The present disclosure provides a transparent thin film heater including: a metal layer; and a transparent conductive oxide layer, wherein the transparent conductive oxide layer includes a composition represented by the following Chemical Formula 1 and is doped with nitrogen: ZnxSn1−xO2 [Chemical Formula 1] wherein 0
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公开(公告)号：US20210167352A1
公开(公告)日：2021-06-03
申请号：US16952087
申请日：2020-11-19
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Ji-Won CHOI , Jin Sang KIM , Chong Yun KANG , Seung Hyub BAEK , Seong Keun KIM , Hyun-Cheol SONG , Sang Tae KIM , Hyun Seok LEE
IPC: H01M4/04 , H01M10/052 , H01M4/58
Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]: SiNx [Chemical Formula 1] (wherein 0
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17.发明申请公开(公告)号：US20190033618A1
公开(公告)日：2019-01-31
申请号：US16044510
申请日：2018-07-25
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Ji-Won CHOI , Yong-Won SONG , Hyunjung YI , Jin Sang KIM , Chong Yun KANG , Seong Keun KIM , Seung Hyub BAEK , Sang Tae KIM , Hyun Seok LEE
IPC: G02C7/04 , H01M10/0562 , H02J50/10 , H01M4/64
Abstract: Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.
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18.发明申请METHOD OF FABRICATING CATHODE FOR THIN FILM BATTERY USING LASER, CATHODE FABRICATED THEREBY, AND THIN FILM BATTERY INCLUDING THE SAME 审中-公开使用激光制作薄膜电池的阴极的方法，其制成的阴极电池和包括其的薄膜电池公开(公告)号：US20160133917A1
公开(公告)日：2016-05-12
申请号：US14802715
申请日：2015-07-17
Applicant: Korea Institute of Science and Technology
Inventor： Ji-Won CHOI , Seok Jin YOON , Jin Sang KIM , Chong Yun KANG , Seung Hyub BAEK , Seong Keun KIM , Beomjin KWON , Haena YIM
CPC classification number: H01M4/0402 , H01M4/0404 , H01M4/505 , H01M4/525 , H01M4/5825 , H01M10/0436 , H01M10/052 , H01M10/058 , H01M10/659
Abstract: A method of fabricating a cathode for a thin film battery includes depositing a cathode active material on a substrate, and crystallizing the cathode active material by irradiating laser onto the cathode active material. The cathode active material may be deposited on the substrate at normal temperature, and a light and easily processable polymer substrate may be used by crystallizing the cathode active material at low temperature using laser. A thin film battery including the cathode fabricated by the above method has excellent charging/discharging characteristics such as high discharge capacity.
Abstract translation: 一种薄膜电池用阴极的制造方法，其特征在于，在基板上沉积正极活性物质，通过在正极活性物质上照射激光来使阴极活性物质结晶化。 阴极活性材料可以在常温下沉积在基板上，并且可以通过使用激光在低温下使阴极活性材料结晶来使用轻且容易加工的聚合物基底。 包括通过上述方法制造的阴极的薄膜电池具有优异的充电/放电特性，例如高放电容量。
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