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    Apparatus and method for applying a film on a substrate
    11.
    发明授权
    Apparatus and method for applying a film on a substrate 有权
    在基材上涂膜的设备和方法

    公开(公告)号：US08507048B2

    公开(公告)日：2013-08-13

    申请号：US13218733

    申请日：2011-08-26

    申请人： Kyekyoon Kim ,  Hyungsoo Choi

    发明人： Kyekyoon Kim ,  Hyungsoo Choi

    IPC分类号： B05D1/04

    CPC分类号： B05B5/001 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00527 ,  B01L3/0268 ,  B01L2400/027 ,  B01L2400/0415 ,  B05B1/14 ,  B05B5/005 ,  B05B5/0255 ,  B05B5/08 ,  B05B12/04 ,  D01D5/0092

    摘要： The subject disclosure provides a method for applying dissimilar electrical charges to portions of a plurality of applicators by way of a conductor included in a conduit of each applicator. The method further includes causing each applicator to generate one or more jet sprays of a liquid received by each applicator for application of a material on a substrate, where one or more portions of the material on the substrate have one or more net charges associated with the dissimilar electrical charges applied to the portions of the plurality of applicators, where the conductor of each applicator is a sleeve positioned in the applicator, and where a diameter of the sleeve results in one of an outer surface of the sleeve contacting a surface of the conduit, or the outer surface of the sleeve having a separation from the surface of the conduit of the applicator. Additional embodiments are disclosed.

    摘要翻译： 本公开提供了一种通过包括在每个施加器的导管中的导体将不同电荷施加到多个施加器的部分的方法。 该方法还包括使每个施加器产生由每个施加器接收的液体的一个或多个喷射喷雾器，以将材料施加到衬底上，其中衬底上的材料的一个或多个部分具有与该衬底相关联的一个或多个净电荷 施加到多个施加器的部分的不同的电荷，其中每个施加器的导体是位于施用器中的套筒，并且其中套筒的直径导致套筒的外表面中的一个接触导管的表面 或者套筒的外表面与施加器的导管的表面分离。 公开了另外的实施例。

    APPARATUS AND METHOD FOR APPLYING A FILM ON A SUBSTRATE
    14.
    发明申请
    APPARATUS AND METHOD FOR APPLYING A FILM ON A SUBSTRATE 有权
    在薄膜上涂敷薄膜的装置和方法

    公开(公告)号：US20110311731A1

    公开(公告)日：2011-12-22

    申请号：US13218733

    申请日：2011-08-26

    申请人： KYEKYOON KIM ,  Hyungsoo Choi

    发明人： KYEKYOON KIM ,  Hyungsoo Choi

    IPC分类号： B05B5/053 ,  B05D7/00

    CPC分类号： B05B5/001 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00527 ,  B01L3/0268 ,  B01L2400/027 ,  B01L2400/0415 ,  B05B1/14 ,  B05B5/005 ,  B05B5/0255 ,  B05B5/08 ,  B05B12/04 ,  D01D5/0092

    摘要： A system that incorporates teachings of the present disclosure may include, for example, an apparatus having a plurality of applicators, each applicator with an ingress opening to receive a liquid, and an egress opening to release the liquid, and a conductor positioned in a conduit of each of the plurality of applicators, the conductor and the conduit having dimensions to cause a surface tension of the liquid to prevent a constant flow of the liquid from the egress opening. Each conductor of the plurality of applicators can be coupled to one of one or more power sources operable to apply a charge to the liquid to overcome the surface tension and form at the egress opening of each applicator a plurality of jet sprays of the liquid applicable on a substrate to form a thin film. Additional embodiments are disclosed.

    摘要翻译： 结合本公开的教导的系统可以包括例如具有多个施加器的设备，每个施加器具有用于接收液体的入口和用于释放液体的出口开口，以及定位在导管中的导体 对于多个施加器中的每一个，导体和导管具有导致液体的表面张力的尺寸，以防止液体从出口开口的恒定流动。 多个施加器的每个导体可以耦合到一个或多个电源中的一个，可操作地将电荷施加到液体以克服表面张力并在每个施用器的出口处形成多个可应用于液体的液体的喷射喷雾 形成薄膜的基板。 公开了另外的实施例。

    Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
    16.
    发明授权
    Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives 有权
    有机金属化合物及其作为形成金属或金属衍生物的薄膜和粉末的前体的用途

    公开(公告)号：US06777565B2

    公开(公告)日：2004-08-17

    申请号：US09894450

    申请日：2001-06-28

    申请人： Hyungsoo Choi

    发明人： Hyungsoo Choi

    IPC分类号： C07F702

    CPC分类号： C07F15/065 ,  C23C16/18 ,  C23C16/42 ,  H01L29/665

    摘要： Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed. The preferred organometallic compounds of the present invention are of the formula (R1)mM(PR23)x, where M is a metal selected from the group consisting of manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium iridium and platinum wherein m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x are 2, 3, 4, 5, 6, 7 or 8, m and x selected according to each metals appropriate valence; each R1 is independently selected from the group consisting of hydrogen, deuterium, N2, H2, D2 and a variety of substituted alkyl groups; each R2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, and alkyl-Z, aryl-Z and arylalkyl-Z where Z is selected from the group consisting of oxy, silyl, siloxy, oxysilyl, siloxy, oxysiloxy, silyalkyl, oxysilylalkyl, siloxyalkyl, oxysiloxyalkyl, silylalkoxy, silylalkoxy, siloxyalkoxy and oxysiloxyalkoxy; and wherein when M is cobalt and one group R1 is selected to be N2, then m is 2 and the second group R1 is hydrogen or deuterium.

    摘要翻译： 公开了衍生自第VIIb，VIII，IX和X族金属的有机金属化合物，其可用作形成含金属粉末的前体，并用于金属在基材上的化学沉积，特别是用于适于制造的金属膜的化学气相沉积 的电子设备。 还公开了它们的使用方法。 本发明优选的有机金属化合物具有式（R 1）mM（PR 2 3）x，其中M是选自锰，锝，铼，铁，钴，镍的金属 ，钌，铑，钯，铱铱和铂，其中m为0,1,2,3或4; x为2,3,4或5，m + x为2,3,4,5,6,7或8，m和x根据每种金属合适的价数选择; 每个R 1独立地选自氢，氘，N 2，H 2，D 2和各种取代的烷基; 每个R 2独立地选自低级烷基，芳基，芳基烷基和烷基-Z，芳基Z和芳基烷基-Z，其中Z选自氧基，甲硅烷基，甲硅烷氧基，氧代甲硅烷基，甲硅烷氧基 ，氧代甲硅烷氧基，硅烷基，氧代甲硅烷基烷基，硅氧烷基，氧代硅氧烷基，甲硅烷基烷氧基，甲硅烷基烷氧基，硅氧烷氧基和氧代硅氧烷基氧基; 并且其中当M是钴并且一个R 1选择为N 2时，则m是2，而第二组R 1是氢或氘。

    Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
    17.
    发明申请
    Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives 审中-公开
    有机金属化合物及其作为形成金属或金属衍生物的薄膜和粉末的前体的用途

    公开(公告)号：US20080268151A1

    公开(公告)日：2008-10-30

    申请号：US12169211

    申请日：2008-07-08

    申请人： Hyungsoo Choi

    发明人： Hyungsoo Choi

    IPC分类号： C23C16/00

    CPC分类号： C07F15/065 ,  C23C16/18 ,  C23C16/42 ,  H01L29/665

    摘要： Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed. The preferred organometallic compounds of the present invention are of the formula (R1)mM(PR23)x, where M is a metal selected from the group consisting of manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium iridium and platinum wherein m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x are 2, 3, 4, 5, 6, 7 or 8, m and x selected according to each metals appropriate valence; each R1 is independently selected from the group consisting of hydrogen, deuterium, N2, H2, D2 and a variety of substituted alkyl groups; each R2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, and alkyl-Z, aryl-Z and arylalkyl-Z where Z is selected from the group consisting of oxy, silyl, siloxy, oxysilyl, siloxy, oxysiloxy, silyalkyl, oxysilylalkyl, siloxyalkyl, oxysiloxyalkyl, silylalkoxy, silylalkoxy, siloxyalkoxy and oxysiloxyalkoxy; and wherein when M is cobalt and one group R1 is selected to be N2, then m is 2 and the second group R1 is hydrogen or deuterium.

    摘要翻译： 公开了衍生自第VIIb，VIII，IX和X族金属的有机金属化合物，其可用作形成含金属粉末的前体，并用于金属在基材上的化学沉积，特别是用于适于制造的金属膜的化学气相沉积 的电子设备。 还公开了它们的使用方法。 本发明的优选的有机金属化合物具有下式（R 1）M（PR 2）3 ）其中M是选自锰，锝，铼，铁，钴，镍，钌，铑，钯，铱铱和铂的金属，其中m为0,1或2， 2,3或4; x为2,3,4或5，m + x为2,3,4,5,6,7或8，m和x根据每种金属合适的价数选择; 每个R 1独立地选自氢，氘，N 2，H 2，D 2，N 2 和各种取代的烷基; 每个R 2独立地选自低级烷基，芳基，芳烷基和烷基-Z，芳基Z和芳基烷基-Z，其中Z选自氧基，甲硅烷基， 甲硅烷氧基，氧代甲硅烷氧基，硅烷基，氧代甲硅烷基烷基，硅氧烷基，氧代硅氧烷基，甲硅烷基烷氧基，甲硅烷基烷氧基，硅氧烷氧基和氧代硅氧烷基烷氧基; 并且其中当M为钴且一组R 1选择为N 2时，则m为2，而第二组R 1为 氢或氘。

    Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
    18.
    发明授权
    Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives 失效
    有机金属化合物及其作为形成金属或金属衍生物的薄膜和粉末的前体的用途

    公开(公告)号：US06753245B2

    公开(公告)日：2004-06-22

    申请号：US10290719

    申请日：2002-11-08

    申请人： Hyungsoo Choi

    发明人： Hyungsoo Choi

    IPC分类号： H01L2144

    CPC分类号： C07F15/065 ,  C23C16/18 ,  C23C16/42 ,  H01L29/665

    摘要： Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed. The preferred organometallic compounds of the present invention are of the formula (R1)mM(PR23)x, where M is a metal selected from the group consisting of manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium iridium and platinum wherein m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x are 2, 3, 4, 5, 6, 7 or 8, m and x selected according to each metals appropriate valence; each R1is independently selected from the group consisting of hydrogen, deuterium, N2, H2, D2 and a variety of substituted alkyl groups; each R2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, and alkyl-Z, aryl-Z and arylalkyl-Z where Z is selected from the group consisting of oxy, silyl, siloxy, oxysilyl, siloxy, oxysiloxy, silyalkyl, oxysilylalkyl, siloxyalkyl, oxysiloxyalkyl, silylalkoxy, silylalkoxy, siloxyalkoxy and oxysiloxyalkoxy; and wherein when M is cobalt and one group R1 is selected to be N2, then m is 2 and the second group R1 is hydrogen or deuterium.

    摘要翻译： 公开了衍生自第VIIb，VIII，IX和X族金属的有机金属化合物，其可用作形成含金属粉末的前体，并用于金属在基材上的化学沉积，特别是用于适于制造的金属膜的化学气相沉积 的电子设备。 还公开了它们的使用方法。 本发明优选的有机金属化合物具有式（R 1）mM（PR 2 3）x，其中M是选自锰，锝，铼，铁，钴，镍的金属 ，钌，铑，钯，铱铱和铂，其中m为0,1,2,3或4; x为2,3,4或5，m + x为2,3,4,5,6,7或8，m和x根据每种金属合适的价数选择; 每个R 1独立地选自氢，氘，N 2，H 2，D 2和各种取代的烷基; 每个R 2独立地选自低级烷基，芳基，芳基烷基和烷基-Z，芳基Z和芳基烷基-Z，其中Z选自氧基，甲硅烷基，甲硅烷氧基，氧代甲硅烷基，甲硅烷氧基 ，氧代甲硅烷氧基，硅烷基，氧代甲硅烷基烷基，硅氧烷基，氧代硅氧烷基，甲硅烷基烷氧基，甲硅烷基烷氧基，硅氧烷氧基和氧代硅氧烷基氧基; 并且其中当M是钴并且一个R 1选择为N 2时，则m是2，而第二组R 1是氢或氘。

    Amidoalane precursors for chemical vapor deposition of aluminum
    19.
    发明授权
    Amidoalane precursors for chemical vapor deposition of aluminum 失效
    化学气相沉积铝的酰胺铝前体

    公开(公告)号：US5880303A

    公开(公告)日：1999-03-09

    申请号：US943330

    申请日：1997-10-03

    申请人： Hyungsoo Choi

    发明人： Hyungsoo Choi

    IPC分类号： C07F5/06

    CPC分类号： C07F5/069

    摘要： This invention provides volatile, intramolecularly coordinated amido/amine alane complexes, H.sub.2 Al{(R.sup.1)(R.sup.2)NC.sub.2 H.sub.4 NR.sup.3 }, wherein R.sup.1, R.sup.2 and R.sup.3 are each independently H or C.sub.1 -C.sub.3 alkyl. These aluminum complexes show extremely high thermal stability and deposit high-quality aluminum films at low temperatures. They are capable of selectively depositing aluminum films on metallic or other electrically conductive substrates with wide process window.

    摘要翻译： 本发明提供挥发性，分子内配位的酰氨基/胺丙烷络合物，H 2 Al {（R 1）（R 2）NC 2 H 4 NR 3），其中R 1，R 2和R 3各自独立地为H或C 1 -C 3烷基。 这些铝配合物显示极高的热稳定性，并在低温下沉积高质量的铝膜。 它们能够在具有宽的工艺窗口的金属或其它导电基材上选择性地沉积铝膜。

    Nanostructures including a metal
    20.
    发明申请
    Nanostructures including a metal 审中-公开
    纳米结构包括金属

    公开(公告)号：US20100291408A1

    公开(公告)日：2010-11-18

    申请号：US12009579

    申请日：2008-01-18

    申请人： Hyungsoo Choi

    发明人： Hyungsoo Choi

    IPC分类号： B32B15/02 ,  B32B15/01

    CPC分类号： C30B25/02 ,  B82Y30/00 ,  C30B29/02 ,  C30B29/605 ,  Y10T428/12993 ,  Y10T428/24917 ,  Y10T428/26

    摘要： One embodiment includes non-catalyticly forming a nanowire on a substrate from an organometallic vapor without application of any type of reduction agent. The nanowire is grown during this formation in a direction away from the substrate and is freestanding during growth. The nanowire has a first dimension of 500 nanometers or less and a second dimension extending from the substrate to a free end of the nanowire at least 10 times greater than the first dimension. In one form, the organometallic vapor includes copper and the nanowire essentially consists of elemental copper, a copper alloy, or oxide of copper. Alternatively or additionally, the nanowire is of a monocrystalline structure.

    摘要翻译： 一个实施方案包括在不施加任何类型的还原剂的情况下从有机金属蒸气在衬底上非催化形成纳米线。 纳米线在这种形成过程中沿远离基底的方向生长，并且在生长期间是独立的。 纳米线具有500纳米或更小的第一尺寸和从基底延伸到纳米线的自由端的第二尺寸比第一尺寸大至少10倍。 在一种形式中，有机金属蒸汽包括铜，并且纳米线基本上由元素铜，铜合金或铜的氧化物组成。 或者或另外，纳米线是单晶结构的。