Light-emitting diode driver
    11.
    发明授权
    Light-emitting diode driver 有权
    发光二极管驱动器

    公开(公告)号:US08461770B2

    公开(公告)日:2013-06-11

    申请号:US12704881

    申请日:2010-02-12

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0809

    摘要: A light-emitting diode (LED) driver used to power at least one LED with an alternating current (AC) voltage source is provided. The LED driver includes a rectifying unit applying N-fold higher voltage than the voltage from the AC voltage source to the LED. The rectifying unit includes a first charging unit to charge a first voltage, and a second charging unit to charge a second voltage. The first voltage includes the voltage at the AC voltage source during a first half-cycle of one AC voltage cycle, and the second voltage includes the first voltage and the voltage at the AC voltage source during the second half-cycle of the AC voltage cycle. Accordingly, the LED driver may improve light-emitting efficiency and reduce flicker of LEDs.

    摘要翻译: 提供了用于为交流(AC)电压源至少一个LED供电的发光二极管(LED)驱动器。 LED驱动器包括整流单元,其施加比来自AC电压源的电压高出N倍的电压。 整流单元包括对第一电压充电的第一充电单元和用于对第二电压充电的第二充电单元。 第一电压包括在一个交流电压周期的第一个半周期期间的交流电压源处的电压,并且第二电压在交流电压周期的第二个半周期期间包括第一电压和交流电压源处的电压 。 因此,LED驱动器可以提高发光效率并减少LED的闪烁。

    Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same
    12.
    发明授权
    Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same 有权
    具有多个非极性发光单元的发光器件及其制造方法

    公开(公告)号:US08436389B2

    公开(公告)日:2013-05-07

    申请号:US13482851

    申请日:2012-05-29

    IPC分类号: H01L33/00

    摘要: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

    摘要翻译: 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体,相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时,可以在发光单元之间的分离区域中部分地去除衬底,以形成凹陷区域。 凹部区域填充有绝缘层,并且通过使用绝缘层至少部分地去除衬底。

    NON-POLAR LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME
    13.
    发明申请
    NON-POLAR LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME 审中-公开
    具有光子晶体结构的非极性发光二极管及其制造方法

    公开(公告)号:US20130026531A1

    公开(公告)日:2013-01-31

    申请号:US13360471

    申请日:2012-01-27

    IPC分类号: H01L33/62

    摘要: A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure embedded in the lower semiconductor layer may improve the light emitting efficiency by preventing the loss of light in the semiconductor layer, and the photonic crystal structure is used to improve the polarization ratio of the non-polar LED.

    摘要翻译: 具有光子晶体结构的非极性发光二极管(LED)及其制造方法。 非极性LED包括支撑衬底,位于支撑衬底上的下半导体层,位于下半导体层上的上半导体层,位于下半导体层和上半导体层之间的非极性有源区,以及光子晶体 结构嵌入下半导体层。 嵌入在下半导体层中的光子晶体结构可以通过防止半导体层中的光的损失来提高发光效率,并且使用光子晶体结构来提高非极性LED的偏振比。

    Light emitting diode having plurality of light emitting cells and method of fabricating the same
    14.
    发明授权
    Light emitting diode having plurality of light emitting cells and method of fabricating the same 有权
    具有多个发光单元的发光二极管及其制造方法

    公开(公告)号:US07846755B2

    公开(公告)日:2010-12-07

    申请号:US12633603

    申请日:2009-12-08

    IPC分类号: H01L29/18

    摘要: The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.

    摘要翻译: 本发明公开了一种发光二极管。 发光二极管包括布置在基板上的多个发光单元,每个发光单元包括布置在第一半导体层上的第一半导体层和第二半导体层; 布置在每个发光单元上并且包括用于暴露第一半导体层的第一开口和暴露第二半导体层的第二开口的第一电介质层; 布置在所述第一介电层上以连接两个所述发光单元的导线; 以及布置在第一介电层和导线上的第二电介质层。 第一电介质层和第二电介质层包含相同的材料,第一电介质层比第二电介质层厚。

    Light emitting device having a plurality of light emitting cells
    15.
    发明授权
    Light emitting device having a plurality of light emitting cells 有权
    具有多个发光单元的发光器件

    公开(公告)号:US09252326B2

    公开(公告)日:2016-02-02

    申请号:US13009284

    申请日:2011-01-19

    摘要: The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.

    摘要翻译: 本发明涉及一种包括至少三对半波发光单元的发光器件,每一对包括连接到第二半波发光单元的端子的第一半波发光单元的端子, 具有相同极性的端子,一个半波发光单元对的连接端子的极性与相邻半波发光单元的连接端子的极性相反。 发光器件还包括至少两个全波发光单元,每个全波发光单元各自连接到相邻的半波发光单元对。 半波发光单元和全波发光单元各自具有至少一个发光单元,半波发光单元各自具有第一端子和第二端子,全波发光单元各自具有 具有与第一端子极性相同的第三端子和与第二端子具有相同极性的第四端子,并且每个全波发光单元的第三端子连接到相邻半波发射单元的第二端子 并且每个半波发光单元的第四端子连接到相邻的半波发光单元的第一端子。

    Light emitting diode having photonic crystal structure and method of fabricating the same
    16.
    发明授权
    Light emitting diode having photonic crystal structure and method of fabricating the same 有权
    具有光子晶体结构的发光二极管及其制造方法

    公开(公告)号:US09224917B2

    公开(公告)日:2015-12-29

    申请号:US13984147

    申请日:2012-01-17

    摘要: Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency.

    摘要翻译: 公开了具有光子晶体结构的发光二极管(LED)及其制造方法。 LED包括支撑衬底,位于支撑衬底上的下半导体层,位于下半导体层之上的上半导体层,位于下半导体层和上半导体层之间的有源区,以及嵌入在下半导体中的光子晶体结构 层。 光子晶体结构可以防止光朝着支撑基板前进的损失,并提高光提取效率。

    Light emitting device having a plurality of light emitting cells

    公开(公告)号:US09202972B2

    公开(公告)日:2015-12-01

    申请号:US13009284

    申请日:2011-01-19

    摘要: The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.

    Light emitting device having plurality of light emitting cells and method of fabricating the same
    18.
    发明授权
    Light emitting device having plurality of light emitting cells and method of fabricating the same 有权
    具有多个发光单元的发光器件及其制造方法

    公开(公告)号:US08937327B2

    公开(公告)日:2015-01-20

    申请号:US13202210

    申请日:2010-03-24

    摘要: A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.

    摘要翻译: 公开了一种具有多个发光单元的发光器件。 发光器件包括衬底; 位于所述基板上的多个发光单元彼此间隔开,每个所述发光单元包括p型下半导体层,有源层和n型上半导体层; p电极被定位成在衬底和发光单元之间彼此间隔开,各个p电极电连接到相应的下半导体层,每个p电极具有延伸到相邻的一个 发光单元; 设置在各个发光单元的上表面上的n电极,其中与每个发光单元电接触的每个n电极的接触表面存在于将所述发光单元平分在所述发光单元的中心的任何直线的两侧 发光单元的上表面; 用于覆盖所述发光单元的侧面的侧绝缘层; 以及用于连接p电极和n电极的电线,电线通过侧绝缘层与发光单元的侧面间隔开。

    LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME
    19.
    发明申请
    LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
    具有光子晶体结构的发光二极管及其制造方法

    公开(公告)号:US20130320301A1

    公开(公告)日:2013-12-05

    申请号:US13984147

    申请日:2012-01-17

    IPC分类号: H01L33/22

    摘要: Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency.

    摘要翻译: 公开了具有光子晶体结构的发光二极管(LED)及其制造方法。 LED包括支撑衬底,位于支撑衬底上的下半导体层,位于下半导体层之上的上半导体层,位于下半导体层和上半导体层之间的有源区,以及嵌入在下半导体中的光子晶体结构 层。 光子晶体结构可以防止光朝着支撑基板前进的损失,并提高光提取效率。