公开(公告)号：US20070183466A1

公开(公告)日：2007-08-09

申请号：US11513224

申请日：2006-08-31

申请人： Joong-kon Son ,  Jeong-wook Lee ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

发明人： Joong-kon Son ,  Jeong-wook Lee ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

IPC分类号： H01S3/10 ,  H01S3/00

CPC分类号： H04N9/3129

摘要： A laser display device is provided which includes: a light source emitting at least one laser beam; a light modulation unit for modulating the laser beam emitted from the light source according to an image signal; a scanning unit scanning the laser beam modulated in the light modulation unit in a main scanning direction and in a sub-scanning direction; and an image unit in which an image is formed having a phosphor layer in which excitation light is generated by a laser beam scanned by the scanning unit.

摘要翻译： 提供了一种激光显示装置，其包括：发射至少一个激光束的光源; 光调制单元，用于根据图像信号调制从光源发射的激光束; 扫描单元沿主扫描方向和副扫描方向扫描在调光单元中调制的激光束; 以及其中形成有图像的图像单元，其具有通过由扫描单元扫描的激光束产生激发光的荧光体层。

公开(公告)号：US20070145386A1

公开(公告)日：2007-06-28

申请号：US11705736

申请日：2007-02-14

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US20060157719A1

公开(公告)日：2006-07-20

申请号：US11320811

申请日：2005-12-30

申请人： Joon-seop Kwak ,  Jeong-wook Lee

发明人： Joon-seop Kwak ,  Jeong-wook Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/12

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.

公开(公告)号：US08183068B2

公开(公告)日：2012-05-22

申请号：US12721063

申请日：2010-03-10

申请人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

发明人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

摘要： A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

摘要翻译： 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。

公开(公告)号：US07871845B2

公开(公告)日：2011-01-18

申请号：US11808368

申请日：2007-06-08

申请人： Suk-ho Yoon ,  Sung-ho Jin ,  Kyoung-kook Kim ,  Jeong-wook Lee

发明人： Suk-ho Yoon ,  Sung-ho Jin ,  Kyoung-kook Kim ,  Jeong-wook Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079

摘要： Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.

摘要翻译： 提供了一种具有提高的效率和功率特性的氮化物基半导体发光器件及其制造方法。 该方法可以包括在衬底上形成牺牲层，在牺牲层上形成钝化层，在钝化层上形成金属氮化物的多个掩蔽点，在钝化层上横向外延生长氮化物基半导体层，使用 掩模点作为掩模，在氮化物基半导体层上形成半导体器件，以及湿蚀刻牺牲层，以从半导体器件分离和/或去除衬底。

公开(公告)号：US07785910B2

公开(公告)日：2010-08-31

申请号：US12215407

申请日：2008-06-27

申请人： Hyun-soo Kim ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Jeong-wook Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/382

摘要： The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on the upper clad layer; and a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.

摘要翻译： 具有突起和凹陷结构的半导体发光器件包括：设置在基板上的下覆盖层; 形成在所述下包层的顶表面的一部分上的有源层; 形成在有源层上的上覆层; 形成在所述上包层上的第一电极; 以及第二电极，其形成在形成在未被有源层占据的下包层的顶表面的一部分上的突起和凹陷结构图案区域上。

公开(公告)号：US20100163912A1

公开(公告)日：2010-07-01

申请号：US12721063

申请日：2010-03-10

申请人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

发明人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

摘要： A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

摘要翻译： 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。

公开(公告)号：US07482189B2

公开(公告)日：2009-01-27

申请号：US11896634

申请日：2007-09-04

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L27/25 ,  H01L29/22

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

公开(公告)号：US20080032436A1

公开(公告)日：2008-02-07

申请号：US11896634

申请日：2007-09-04

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

公开(公告)号：US20070012933A1

公开(公告)日：2007-01-18

申请号：US11448832

申请日：2006-06-08

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= β）相对于所述基板的上表面; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。