公开(公告)号：US10460951B2

公开(公告)日：2019-10-29

申请号：US15959135

申请日：2018-04-20

Applicant: Lam Research Corporation

Inventor： Saravanapriyan Sriraman ,  Monica Titus ,  Alex Paterson

IPC: H01L21/3065 ,  C23C16/455 ,  H01J37/32 ,  H01L21/31 ,  H01L21/67

Abstract: Methods, systems, and computer programs are presented for controlling gas flow in a semiconductor manufacturing chamber. The method includes flowing a reactant gas thorough an inner feed and a tuning gas through an outer feed surrounding the inner feed, such that the gases do not mix until both are introduced in the chamber. Further, the flow of the reactant gas is convective, and the flow of the tuning gas is directed at an angle from the direction of the reactant gas, providing a delivery of the tuning gas in closer proximity to the RF power before further mixing with the reactant gas. Radio frequency power is provided to the electrode to ignite a plasma using the reactant and tuning gases. The diffusive flow of the tuning gas enables the tuning gas to be dissociated by the RF power allowing for control of the local residence time variation and preferential spatial dissociation patterns with respect to the local residence time of the reactant gas. The introduction of the gases into the chamber without pre-mixing imparts control of etch uniformity across the surface of the substrate during etching.

公开(公告)号：US10224221B2

公开(公告)日：2019-03-05

申请号：US15055439

申请日：2016-02-26

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Thorsten Lill ,  Vahid Vahedi ,  Alex Paterson ,  Monica Titus ,  Gowri Kamarthy

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01J37/32

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

公开(公告)号：US20160293431A1

公开(公告)日：2016-10-06

申请号：US14675659

申请日：2015-03-31

Applicant: Lam Research Corporation

Inventor： Saravanapriyan Sriraman ,  Monica Titus ,  Alex Paterson

IPC: H01L21/3065 ,  H01L21/31 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C23C16/45561 ,  C23C16/45574 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32926 ,  H01L21/31 ,  H01L21/67069

Abstract: Methods, systems, and computer programs are presented for controlling gas flow in a semiconductor manufacturing chamber. The method includes flowing a reactant gas thorough an inner feed and a tuning gas through an outer feed surrounding the inner feed, such that the gases do not mix until both are introduced in the chamber. Further, the flow of the reactant gas is convective, and the flow of the tuning gas is directed at an angle from the direction of the reactant gas, providing a delivery of the tuning gas in closer proximity to the RF power before further mixing with the reactant gas. Radio frequency power is provided to the electrode to ignite a plasma using the reactant and tuning gases.

Abstract translation: 提出了用于控制半导体制造室中的气体流动的方法，系统和计算机程序。 该方法包括使内部进料和调谐气体通过围绕内部进料的外部进料流动的反应气体，使得气体不混合，直到两者都被引入室中。 此外，反应气体的流动是对流的，并且调谐气体的流动与反应物气体的方向成一定角度，提供调节气体更靠近RF功率的输送，然后进一步与 反应气体。 向电极提供射频功率，以使用反应物和调谐气体点燃等离子体。

公开(公告)号：US20160203990A1

公开(公告)日：2016-07-14

申请号：US15055439

申请日：2016-02-26

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Thorsten Lill ,  Vahid Vahedi ,  Alex Paterson ,  Monica Titus ,  Gowri Kamarthy

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

Abstract translation: 这里公开的实施例涉及用于蚀刻半导体衬底的改进的方法和设备。 等离子体栅格组件位于反应室中，以将室分成上部和下部子室。 等离子体栅格组件可以包括具有特定纵横比的槽的一个或多个等离子体栅格，其允许某些物质从上部子室通到下部子室。 在使用多个等离子体栅格的情况下，一个或多个栅格可以是可移动的，允许在至少下部子室中等离子体条件的稳定性。 在一些情况下，在上部子室中产生电子 - 离子等离子体。 使其通过栅格到下部子室的电子在它们通过时被冷却。 在某些情况下，这导致下部子室中的离子离子等离子体。

公开(公告)号：US20160181130A1

公开(公告)日：2016-06-23

申请号：US15055380

申请日：2016-02-26

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Thorsten Lill ,  Vahid Vahedi ,  Alex Paterson ,  Monica Titus ,  Gowri Kamarthy

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.