公开(公告)号：US11915912B2

公开(公告)日：2024-02-27

申请号：US18084684

申请日：2022-12-20

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32568 ,  H01L21/6833 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

公开(公告)号：US20240030000A1

公开(公告)日：2024-01-25

申请号：US18480495

申请日：2023-10-03

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Zhongkui Tan ,  Ying Wu ,  Qian Fu ,  Alex Paterson ,  John Drewery

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32146 ,  H01J37/32128 ,  H01L21/3065

Abstract: Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

公开(公告)号：US11728136B2

公开(公告)日：2023-08-15

申请号：US17729451

申请日：2022-04-26

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Yuhou Wang ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32 ,  H03K4/92

CPC classification number: H01J37/32128 ,  H01J37/3211 ,  H03K4/92 ,  H01J2237/334

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

公开(公告)号：US11462390B2

公开(公告)日：2022-10-04

申请号：US16783721

申请日：2020-02-06

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H01J37/08 ,  H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：US10943789B2

公开(公告)日：2021-03-09

申请号：US15819696

申请日：2017-11-21

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu ,  John Drewery

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/308 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67

Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

公开(公告)号：US10672590B2

公开(公告)日：2020-06-02

申请号：US15921266

申请日：2018-03-14

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Yuhou Wang ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32

Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

公开(公告)号：US20190295820A1

公开(公告)日：2019-09-26

申请号：US16275008

申请日：2019-02-13

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：US20190287764A1

公开(公告)日：2019-09-19

申请号：US15921266

申请日：2018-03-14

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Yuhou Wang ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32

Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

公开(公告)号：US10340915B2

公开(公告)日：2019-07-02

申请号：US15975072

申请日：2018-05-09

Applicant: Lam Research Corporation

Inventor： Ying Wu

IPC: H03K19/003 ,  H04B1/10 ,  H04B1/7136 ,  H01L21/02

Abstract: Systems and methods for frequency and match tuning in one state S1 and frequency tuning in another state S2 are described. The systems and methods include determining one or more variables for the states S1 and S2, and tuning a frequency for the state S1 of a radio frequency (RF) generator based on the one or more variables.

公开(公告)号：US10304660B1

公开(公告)日：2019-05-28

申请号：US15928029

申请日：2018-03-21

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The RF signal is applied to a substrate support via a match. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. In addition, a direct current (DC) parameter is applied to the substrate support or another RF signal is applied to an upper electrode. The parameter and the frequency of the RF signal applied to the substrate support are simultaneously pulsed with the DC parameter or the RF signal applied to the upper electrode to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.