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公开(公告)号：US20210126167A1
公开(公告)日：2021-04-29
申请号：US16698978
申请日：2019-11-28
Applicant: Lextar Electronics Corporation
Inventor： Chang-Zhi ZHONG , Hung-Chia WANG , Hung-Chun TONG , Yu-Chun LEE , Tzong-Liang TSAI
Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.
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公开(公告)号：US20160365493A1
公开(公告)日：2016-12-15
申请号：US15054065
申请日：2016-02-25
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Hsin-Lun SU , Chih-Hao LIN , Fang-Chang HSUEH , Tzong-Liang TSAI , Yi-Jyun CHEN
IPC: H01L33/56
CPC classification number: H01L33/486 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00012
Abstract: A light-emitting diode device includes a shell with a recess, wherein the shell does not contain metal oxide. A plurality of lead frames extends from the bottom of the recess to the outside of the shell. At least an UV light-emitting diode (LED) chip is disposed on the bottom of the recess and is electrically connected to the lead frames, wherein the UV LED chip has a wavelength range of 200 nm-400 nm. In addition, an encapsulation adhesive fills the recess to cover the UV LED chip.
Abstract translation: 发光二极管装置包括具有凹部的外壳，其中外壳不含有金属氧化物。 多个引线框架从凹部的底部延伸到外壳的外部。 至少一个UV发光二极管（LED）芯片设置在凹槽的底部并且电连接到引线框架，其中UV LED芯片具有200nm-400nm的波长范围。 此外，封装粘合剂填充凹部以覆盖UV LED芯片。
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公开(公告)号：US20140268877A1
公开(公告)日：2014-09-18
申请号：US14077655
申请日：2013-11-12
Applicant: Lextar Electronics Corporation
Inventor： Kuang-Neng YANG , Kun-Hua WU , Jo-Hsiang CHEN , Chih-Hao LIN , Che-Wei HSU , Tzong-Liang TSAI
IPC: H01L25/075 , F21V8/00
CPC classification number: H01L25/0753 , G02B6/0083 , H01L33/505 , H01L33/507 , H01L33/62 , H01L33/642 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014 , H01L2924/00
Abstract: A luminous element includes a heat dissipation plate, a body, a plurality of LED chips, a first connector and a second connector. The heat dissipation plate includes a die-bonding area and a heat dissipation area opposite to the die-bonding area. The body surrounds the heat dissipation plate, and includes a first body surface and a second body surface opposite to the first body surface. The first body surface includes a concave part exposing the die-bonding area. The second body surface includes an opening exposing the heat dissipation area. The LED chips are mounted on the die-bonding area. The first and the second connectors are disposed on the body, and they can be pluggably connected to an external power source or other connectors. The LED chips are connected to the electrical input terminals in the first and the second connectors.
Abstract translation: 发光元件包括散热板，主体，多个LED芯片，第一连接器和第二连接器。 散热板包括芯片接合区域和与芯片接合区域相对的散热区域。 主体围绕散热板，并且包括与第一主体表面相对的第一主体表面和第二主体表面。 第一体表包括露出芯片接合区域的凹部。 第二体表面包括露出散热区域的开口。 LED芯片安装在芯片接合区域上。 第一和第二连接器设置在主体上，并且它们可以可插拔地连接到外部电源或其它连接器。 LED芯片连接到第一和第二连接器中的电输入端子。
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公开(公告)号：US20220291551A1
公开(公告)日：2022-09-15
申请号：US17650856
申请日：2022-02-14
Applicant: Lextar Electronics Corporation
Inventor： Yi-Ting TSAI , Hung-Chia WANG , Chia-Chun HSIEH , Pei-Cong YAN , Hung-Chun TONG , Yu-Chun LEE , Tzong-Liang TSAI
IPC: G02F1/1335 , G02F1/13357
Abstract: A wavelength conversion material comprises a luminous core and a covering layer. The luminous core comprises a quantum dot or a fluorescent powder. The covering layer covers the luminous core. The covering layer is an amorphous material, and an outer surface of the covering layer has at least one sharp corner.
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公开(公告)号：US20210167257A1
公开(公告)日：2021-06-03
申请号：US17013851
申请日：2020-09-07
Applicant: Lextar Electronics Corporation
Inventor： Yi-Ting TSAI , Hung-Chia WANG , Hung-Chun TONG , Yu-Chun LEE , Tzong-Liang TSAI
IPC: H01L33/50 , H01L33/00 , G02F1/13357
Abstract: A light conversion material includes a general formula and complies with a condition. The general formula is MmAaCcEe:ESxREy. M is at least one element selected from a group, and 2≤m≤3. A is at least one element selected from a group, and 0.01≤a≤1. C is at least one element selected from a group, and 1≤c≤9, E is at least one element selected from a group, and 5≤e≤7. ES is at least one element selected from a group, and 0≤x≤3. RE is at least one element selected from a group, and 0≤y≤3. The condition (2) is m+x+y=3.
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Patent Agency Ranking
公开(公告)号：US20200373467A1
公开(公告)日：2020-11-26
申请号：US16687634
申请日：2019-11-18
Applicant: Lextar Electronics Corporation
Inventor： Chang-Zhi ZHONG , Hung-Chun TONG , Yu-Chun LEE , Tzong-Liang TSAI
Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.
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17.发明申请公开(公告)号：US20200248070A1
公开(公告)日：2020-08-06
申请号：US16566903
申请日：2019-09-11
Applicant: Lextar Electronics Corporation
Inventor： Zhen BAO , Yu-Jui TSENG , Ru-Shi LIU , Hung-Chun TONG , Hung-Chia WANG , Yu-Chun LEE , Tzong-Liang TSAI
Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.
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18.发明申请公开(公告)号：US20200176647A1
公开(公告)日：2020-06-04
申请号：US16537618
申请日：2019-08-11
Applicant: Lextar Electronics Corporation
Inventor： Yi-Ting TSAI , Yu-Chun LEE , Tzong-Liang TSAI
Abstract: A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr1-x, Bax)LiAl3N4-nOn:Eu3+y, Eu2+z with 0 0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.
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公开(公告)号：US20180366614A1
公开(公告)日：2018-12-20
申请号：US15993616
申请日：2018-05-31
Applicant: Lextar Electronics Corporation
Inventor： Wei-Lun WU , Yu-Chun LEE , Ching-Yi CHEN , Tzong-Liang TSAI , Mu-Huai FANG , Ru-Shi LIU , Tsun-Hsiung YANG , Chaochin SU
Abstract: An emission spectrum of a manganese-doped red fluoride phosphor includes a zero phonon line crest and a crest. The zero phonon line crest has a first peak emission wavelength and a first intensity (I1). The crest has a second peak emission wavelength and a maximum intensity (Imax) except for the zero phonon line crest. The second peak emission wavelength is greater than the first peak emission wavelength. A ratio (I1/Imax) of the first intensity (I1) to the maximum intensity (Imax) is ranged from about 0.2 to about 8 such that a luminous decay time of the manganese-doped red fluoride phosphor is less than 10 ms.
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公开(公告)号：US20180106994A1
公开(公告)日：2018-04-19
申请号：US15729649
申请日：2017-10-10
Applicant: Lextar Electronics Corporation
Inventor： Chih-Hao LIN , Hui-Ru WU , Jo-Hsiang CHEN , Tzong-Liang TSAI
CPC classification number: G02B26/008 , F21V9/30 , F21Y2115/10 , G02B5/26 , G02B5/285
Abstract: A light-enhancement device includes a wavelength conversion member and a wavelength controlling element. The wavelength conversion member includes a light-transmissive substrate and wavelength conversion material which is disposed within the light-transmissive substrate for converting a portion of light with a first wavelength into another light with a second wavelength. The wavelength controlling element is disposed on a surface of the light-transmissive substrate for reflecting another portion of the light with the first wavelength into the light-transmissive substrate and enabling the portion of the light with the second wavelength to pass through the wavelength controlling element. A roughness of the surface of the light-transmissive substrate facing towards the wavelength controlling element is configured to be 0-1 μm.
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