Abstract:
The disclosure provides a heat sink for electrical elements and a light-emitting device containing thereof. The heat sink includes a radiating substrate and at least one hollow radiating channel. In which, the hollow radiating channel is horizontally embedded in the radiating substrate, and has two openings disposed on the same site or the opposite sites of the radiating substrate, so that gas may flow in the hollow radiating channel and remove heat of the radiating substrate. And a light-emitting device containing the heat sink is also provided.
Abstract:
A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.
Abstract:
A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.
Abstract:
A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.
Abstract:
A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.
Abstract:
A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.
Abstract:
A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.
Abstract:
A display device includes a driving substrate, multiple light-emitting elements, first and second transparent substrates, multiple pixels, and a patterned light-absorbing layer. The light-emitting elements are disposed on the driving substrate and used to emit a light. The first transparent substrate is disposed over the driving substrate and the light-emitting elements and includes at least one groove. The pixels are disposed in the groove and include a first sub-pixel, a second sub-pixel, and a third sub-pixel respectively aligned with one of the light-emitting elements. The second transparent substrate covers the first transparent substrate and the pixels. The patterned light-absorbing layer is disposed on the second transparent substrate and includes multiple first openings respectively aligned with the first, second, and third sub-pixels. The first, second, and third sub-pixels correspond to the light emitted by the light-emitting elements to respectively emit a red light, a green light, and a blue light.
Abstract:
A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0≤a≤1, 0≤b≤1.
Abstract:
A fluoride phosphor including a sheet-like crystal and a manufacturing method and an application therefore are disclosed. The fluoride phosphor has a chemical formula A2[MF6]:Mn4+, with Mn4+ as an activator. The A is Li, Na, K, Rb, Cs, NH4 or a combination thereof. The M is Ge, Si, Sn, Ti, Zr or a combination thereof. The sheet-like crystal has a thickness d. A crystal flat surface of the sheet-like crystal has a maximum length a. The maximum length a is defined as a distance between two end points on an edge of the crystal flat surface and farthest from each other. 8≤a/d≤35.