公开(公告)号：US20180175077A1

公开(公告)日：2018-06-21

申请号：US15828207

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HyungJoon Koo ,  SeHee Park ,  Kwanghwan Ji ,  PilSang Yun ,  Jaeyoon Park ,  HongRak Choi

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869

Abstract: Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.

公开(公告)号：US11984509B2

公开(公告)日：2024-05-14

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US11177390B2

公开(公告)日：2021-11-16

申请号：US16574725

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak Cho ,  JungSeok Seo ,  SeHee Park ,  Jaeyoon Park ,  SangYun Sung

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including a first electrode disposed on a substrate, an insulation pattern disposed on the substrate, the insulation pattern overlapping with an edge of the first electrode, a second electrode disposed on an upper surface of the insulation pattern, an active layer disposed on the first electrode, the insulation pattern and the second electrode, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, in which a first portion of the active layer overlaps with the first electrode, a second portion of the active layer overlaps with the second electrode, and a channel area of the active layer is between the first portion of the active layer and the second portion of the active layer, and the channel area includes a first channel portion disposed along a side surface of the insulation pattern, and a second channel portion disposed on a portion of the upper surface of the insulation pattern, the second channel portion extending from an edge of the second electrode to the first channel portion.

公开(公告)号：US11121260B2

公开(公告)日：2021-09-14

申请号：US16705767

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US10811485B2

公开(公告)日：2020-10-20

申请号：US16219440

申请日：2018-12-13

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  PilSang Yun ,  Jaeyoon Park

IPC: H01L27/32 ,  H01L51/52 ,  G09G3/3291 ,  H01L27/12 ,  G09G3/3233

Abstract: An organic light emitting display panel can include a substrate; pixels disposed on the substrate; a driving transistor including: a driving active layer, a driving gate electrode overlapping with the driving active layer, a driving first conductor extended from one end of the driving active layer, a driving second conductor extended from the other end of the driving active layer, and a driving first gate insulating film overlapping with the driving active layer; a switching transistor including: a switching active layer, a switching gate electrode overlapping with the switching active layer, a switching first conductor extended from one end of the switching active layer, a switching second conductor extended from the other end of the switching active layer, and a switching first gate insulating film overlapping with the switching active layer; an organic light emitting diode; and a second gate insulating film disposed between the driving and switching gate electrodes of the driving and switching transistors, and the driving first conductor, the driving second conductor, the driving first gate insulating film, the switching first conductor, the switching second conductor and the switching first gate insulating film.

公开(公告)号：US10236310B2

公开(公告)日：2019-03-19

申请号：US15824974

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  HongRak Choi ,  PilSang Yun ,  HyungJoon Koo ,  Kwanghwan Ji ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/78 ,  H01L51/56 ,  H01L29/417 ,  H01L27/07 ,  H01L29/786

Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.

公开(公告)号：US20240222523A1

公开(公告)日：2024-07-04

申请号：US18491514

申请日：2023-10-20

Applicant: LG Display Co., Ltd.

Inventor： Hyeonjoo Seul ,  Jinwon Jung ,  Sungju Choi ,  Jaeyoon Park

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121

CPC classification number: H01L29/78696 ,  H01L29/6675 ,  H01L29/7869 ,  H10K59/1213

Abstract: A thin film transistor including an active layer including a channel, a first connection portion and a second connection portion contacting opposite sides of the channel; and a gate electrode overlapping the channel of the active layer. Further, the active layer includes a first active layer; a second active layer on the first active layer in the first connection portion and the second connection portion of the active layer; and a third active layer contacting the first active layer in the channel and contacting the second active layer in the first connection portion and the second connection portion.

公开(公告)号：US11705460B2

公开(公告)日：2023-07-18

申请号：US17671452

申请日：2022-02-14

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan Ji ,  HongRak Choi ,  Jeyong Jeon ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US11276710B2

公开(公告)日：2022-03-15

申请号：US16659528

申请日：2019-10-21

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan Ji ,  HongRak Choi ,  Jeyong Jeon ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L29/786

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US10453944B2

公开(公告)日：2019-10-22

申请号：US15858065

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon Park ,  SeHee Park ,  HyungJoon Koo ,  Kwanghwan Ji ,  PilSang Yun

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.