公开(公告)号：US09853178B2

公开(公告)日：2017-12-26

申请号：US14788057

申请日：2015-06-30

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Junyong Ahn ,  Jinho Kim

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: A manufacturing method of selective emitter solar cell can include, forming an emitter layer positioned on a light receiving surface of the substrate having a first conductive type, the emitter layer having a second conductive type opposite to the first conductive type, forming a first emitter portion having a first impurity concentration and a second emitter portion having a second impurity concentration higher than the first impurity concentration on the emitter layer using a etch stop mask or a mask pattern, and forming a plurality of first electrodes connected to the second emitter portion, wherein the second emitter portion includes a first region that contacts the first electrodes and overlaps the first electrodes and a second region that is positioned around the first region and does not overlap the first electrodes, and the line width of the second region is more than the line width of each first electrode and less than four times the line width of each first electrode.

公开(公告)号：US09755089B2

公开(公告)日：2017-09-05

申请号：US14478841

申请日：2014-09-05

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Sangwook Park ,  Junyong Ahn ,  Manhyo Ha

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/068

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/068 ,  Y02E10/547

Abstract: A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate. The front passivation part and the back passivation part each include a silicon oxide layer. One of the front passivation part and the back passivation part includes an aluminum oxide layer.

公开(公告)号：US10964827B2

公开(公告)日：2021-03-30

申请号：US15903653

申请日：2018-02-23

Applicant: LG ELECTRONICS INC.

Inventor： Junyong Ahn ,  Younghyun Lee ,  Jinhyung Lee

IPC: H01L31/0224 ,  H01L31/068

Abstract: A solar cell includes a first conductive type substrate; an emitter layer of a second conductive type opposite the first conductive type, the emitter layer and the substrate forming a p-n junction; an anti-reflection layer positioned on the emitter layer; a plurality of first electrodes passing through the anti-reflection layer and being electrically connected to the emitter layer, at least one of the plurality of first electrodes including: a first electrode layer and a plurality of first electrode auxiliaries separated from the first electrode layer and positioned around the first electrode layer; and a second electrode layer positioned on the first electrode layer and on the plurality of first electrode auxiliaries; and a second electrode electrically connected to the substrate.

公开(公告)号：US10566487B2

公开(公告)日：2020-02-18

申请号：US15196743

申请日：2016-06-29

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae Chang ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn

IPC: H01L31/0745 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

公开(公告)号：US10367115B2

公开(公告)日：2019-07-30

申请号：US15832321

申请日：2017-12-05

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Junyong Ahn ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/20 ,  H01L31/0224

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US10014419B2

公开(公告)日：2018-07-03

申请号：US15643180

申请日：2017-07-06

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.

公开(公告)号：US09722104B2

公开(公告)日：2017-08-01

申请号：US14953264

申请日：2015-11-27

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

公开(公告)号：US09214593B2

公开(公告)日：2015-12-15

申请号：US14691396

申请日：2015-04-20

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Junyong Ahn ,  Jinho Kim

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/0224

CPC classification number: H01L31/186 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547

Abstract: A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.

公开(公告)号：US20180158968A1

公开(公告)日：2018-06-07

申请号：US15830693

申请日：2017-12-04

Applicant: LG ELECTRONICS INC.

Inventor： Daeyong Lee ,  Junyong Ahn

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/02363 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method of manufacturing the same are discussed. The method of manufacturing the solar cell includes forming a dopant layer on one surface of a semiconductor substrate, selectively etching at least a portion of the dopant layer positioned in a first area of the semiconductor substrate, performing a thermal processing operation on the semiconductor substrate to form a conductive region, removing the dopant layer remaining in the one surface of the semiconductor substrate, forming first electrodes on a second area of the semiconductor substrate, and forming second electrodes on a surface opposite the one surface of the semiconductor substrate. In the thermal processing operation, a lightly doped region is formed in the first area, and a heavily doped region is formed in the second area.