公开(公告)号：US11239379B2

公开(公告)日：2022-02-01

申请号：US16456915

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

公开(公告)号：US10971646B2

公开(公告)日：2021-04-06

申请号：US16520014

申请日：2019-07-23

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae Chang ,  Junyong Ahn ,  Hyunho Lee

IPC: H01L31/18 ,  C23C16/24 ,  C23C16/455 ,  C23C16/458

Abstract: Provided is a Chemical vapor deposition (CVD) equipment including a chamber having an inner space, a plurality of silicon wafers disposed in the inner space of the chamber in an upright position; and a plurality of shower nozzles configured to inject a mixed gas composed of a silicon deposition gas and an impurity gas toward each side edge of the plurality of wafers. The plurality of shower nozzles can be disposed at both sides of the plurality of the plurality of silicon wafers.

公开(公告)号：US10050170B2

公开(公告)日：2018-08-14

申请号：US15418336

申请日：2017-01-27

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Junyong Ahn ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/18 ,  H01L31/20 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/024 ,  H01L31/068 ,  H01L31/0224

CPC classification number: H01L31/1864 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/186 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US20180097140A1

公开(公告)日：2018-04-05

申请号：US15832321

申请日：2017-12-05

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Junyong Ahn ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/18 ,  H01L31/0368 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/182 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.