公开(公告)号：US20140264464A1

公开(公告)日：2014-09-18

申请号：US13801002

申请日：2013-03-13

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  James BUSTILLO ,  Jordan OWENS

IPC: G01N27/414

CPC classification number: G01N27/414 ,  G01N27/4145

Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.

Abstract translation: 在一个实施方式中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电侧壁间隔物位于开口的侧壁上并与浮栅导体的上表面接触。

公开(公告)号：US20140193938A1

公开(公告)日：2014-07-10

申请号：US14179453

申请日：2014-02-12

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE

IPC: H01L29/66 ,  G01N27/414

CPC classification number: H01L29/6659 ,  G01N27/414 ,  G01N27/4145 ,  H01L27/11517 ,  H01L29/788

Abstract: A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes.

Abstract translation: 具有轻掺杂区域的化学敏感传感器，其影响化学敏感传感器的栅极和电极之间的重叠电容。 轻掺杂区域在化学敏感传感器的栅极区域的下方并且相邻。 通过操纵电极下面的轻掺杂区域来实现化学敏感传感器的增益的修改。

公开(公告)号：US20130214795A1

公开(公告)日：2013-08-22

申请号：US13848444

申请日：2013-03-21

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE

IPC: G01R29/26

CPC classification number: G01N27/4148 ,  C12Q1/6869 ,  G01J1/46 ,  G01N27/4143 ,  G01N27/4145 ,  G01N33/00 ,  G01R29/26 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L29/66 ,  H01L2924/0002 ,  H04N5/374 ,  Y10T436/25875 ,  H01L2924/00

Abstract: To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 1T, pixel can provide gain by converting the drain current to voltage in the column. Configurable pixels can be created to allow both common source read out as well as source follower read out. A plurality of the 1T pixels may form an array, having a number of rows and a number of columns and a column readout circuit in each column.

Abstract translation: 为了将像素尺寸减小到最小尺寸和最简单的操作形式，可以通过仅使用一个离子敏感场效应晶体管（ISFET）来形成像素。 该单晶体管或1T像素可以通过将漏极电流转换为列中的电压来提供增益。 可以创建可配置的像素，以便共同的源读取以及源跟随器读出。 多个1T像素可以形成阵列，每列具有多行，多列和列读出电路。

公开(公告)号：US20200158684A1

公开(公告)日：2020-05-21

申请号：US16677662

申请日：2019-11-07

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE

IPC: G01N27/414 ,  G01N27/30

Abstract: An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region.

公开(公告)号：US20200057021A1

公开(公告)日：2020-02-20

申请号：US16663052

申请日：2019-10-24

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Jonathan M. ROTHBERG ,  Keith G. FIFE ,  James BUSTILLO ,  Jordan OWENS

IPC: G01N27/414 ,  H01L29/66 ,  C12Q1/6874

Abstract: In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.

公开(公告)号：US20180128773A1

公开(公告)日：2018-05-10

申请号：US15614589

申请日：2017-06-05

Applicant: Life Technologies Corporation

Inventor： Keith G. FIFE ,  Jordan OWENS ,  Shifeng LI ,  James BUSTILLO

IPC: G01N27/414 ,  B01L3/00 ,  H01L21/28

Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

公开(公告)号：US20160077045A1

公开(公告)日：2016-03-17

申请号：US14939101

申请日：2015-11-12

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  Jordan OWENS ,  Shifeng LI ,  James BUSTILLO

IPC: G01N27/414 ,  H01L21/28

CPC classification number: G01N27/414 ,  B01L3/502761 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0877 ,  G01N27/4145 ,  G01N27/4148 ,  H01L21/28273

Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

Abstract translation: 描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口，该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面并沿着开口的侧壁延伸一段距离。

公开(公告)号：US20150097610A1

公开(公告)日：2015-04-09

申请号：US14569289

申请日：2014-12-12

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  Jungwook Yang

IPC: G01N27/414 ,  H03K5/003

CPC classification number: G01N27/4148 ,  H03K5/003 ,  Y10S436/806 ,  Y10S436/807 ,  Y10T436/11

Abstract: An array of sensors arranged in matched pairs of transistors with an output formed on a first transistor and a sensor formed on the second transistor of the matched pair. The matched pairs are arranged such that the second transistor in the matched pair is read through the output of the first transistor in the matched pair. The first transistor in the matched pair is forced into the saturation (active) region to prevent interference from the second transistor on the output of the first transistor. A sample is taken of the output. The first transistor is then placed into the linear region allowing the sensor formed on the second transistor to be read through the output of the first transistor. A sample is taken from the output of the sensor reading of the second transistor. A difference is formed of the two samples.

Abstract translation: 布置成匹配的晶体管对的传感器阵列，其具有形成在第一晶体管上的输出和形成在匹配对的第二晶体管上的传感器。 匹配对被布置成使得匹配对中的第二晶体管通过匹配对中的第一晶体管的输出读取。 匹配对中的第一晶体管被迫进入饱和（有源）区域，以防止第一晶体管的输出上的第二晶体管的干扰。 取出输出的样本。 然后将第一晶体管放置在线性区域中，允许通过第一晶体管的输出读取形成在第二晶体管上的传感器。 样品从第二晶体管的传感器读数的输出中取出。 两个样本形成差异。

公开(公告)号：US20150064829A1

公开(公告)日：2015-03-05

申请号：US14543551

申请日：2014-11-17

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  James BUSTILLO ,  Jordan OWENS

IPC: G01N27/414

CPC classification number: G01N27/414 ,  G01N27/4145

Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.

Abstract translation: 在一个实施方式中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电侧壁间隔物位于开口的侧壁上并与浮栅导体的上表面接触。

公开(公告)号：US20140264471A1

公开(公告)日：2014-09-18

申请号：US14198402

申请日：2014-03-05

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  Jordan OWENS ,  Shifeng LI ,  James BUSTILLO

IPC: G01N27/414

CPC classification number: G01N27/414 ,  B01L3/502761 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0877 ,  G01N27/4145 ,  G01N27/4148

Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

Abstract translation: 在一个实施方式中，描述了化学装置。 传感器包括化学敏感的场效应晶体管，其包括具有彼此电耦合的多个浮置栅极导体的浮动栅极结构。 导电元件覆盖并与多个浮置栅极导体中的最上面的浮动栅极导体连通。 导电元件比最上面的浮栅导体更宽和更薄。 介电材料限定了延伸到导电元件的上表面的开口。