公开(公告)号：US09620697B2

公开(公告)日：2017-04-11

申请号：US14379987

申请日：2013-02-19

Applicant: KYUSHU INSTITUTE OF TECHNOLOGY ,  LINTEC CORPORATION

Inventor： Tsuyoshi Mutou ,  Koji Miyazaki ,  Yoshika Hatasako ,  Kunihisa Kato

IPC: H01L35/16 ,  H01L35/22 ,  H01L35/24 ,  H01L35/34 ,  H01L35/18 ,  H01L35/32

CPC classification number: H01L35/24 ,  H01L35/16 ,  H01L35/18 ,  H01L35/32 ,  H01L35/34

Abstract: The present invention provides a thermoelectric conversion material of which the structure is controlled to have nano-order microscopic pores and which has a low thermal conductivity and has an improved thermoelectric performance index. In the thermoelectric conversion material having a thermoelectric semiconductor layer formed on a block copolymer substrate that comprises a block copolymer having microscopic pores, wherein the block copolymer comprises a polymer unit (A) formed of a monomer capable of forming a homopolymer having a glass transition temperature of 50° C. or higher, and a polymer unit (B) formed of a conjugated dienic polymer.

公开(公告)号：US09461228B2

公开(公告)日：2016-10-04

申请号：US14385595

申请日：2013-03-11

Applicant: LINTEC CORPORATION ,  KYUSHU INSTITUTE OF TECHNOLOGY

Inventor： Kunihisa Kato ,  Tsuyoshi Mutou ,  Koji Miyazaki

IPC: H01L35/16 ,  H01L35/24 ,  H01L35/34

CPC classification number: H01L35/24 ,  H01L35/16 ,  H01L35/34

Abstract: The present invention provides a thermoelectric conversion material excellent in thermoelectric performance and flexibility and capable of being produced in a simplified manner and at a low cost, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles and a conductive polymer, and the method for producing a thermoelectric conversion material includes a step of applying the thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles and a conductive polymer onto the support and drying it to forma thin film thereon.

Abstract translation: 本发明提供热电性能和柔性优异且能够以简单的方式和低成本制造的热电转换材料及其制造方法。 热电转换材料在载体上具有含有热电半导体微粒和导电性高分子的热电半导体组合物的薄膜，热电转换材料的制造方法具备以下步骤：将含有热电半导体的热电半导体组合物 颗粒和导电聚合物加载到载体上并干燥以在其上形成薄膜。

公开(公告)号：US12114568B2

公开(公告)日：2024-10-08

申请号：US18034430

申请日：2021-10-28

Applicant: LINTEC CORPORATION

Inventor： Yuta Seki ,  Kunihisa Kato ,  Wataru Morita ,  Mutsumi Masumoto

IPC: H10N10/01 ,  H10N10/17 ,  H10N10/857

CPC classification number: H10N10/01 ,  H10N10/17 ,  H10N10/857

Abstract: Provided is a method for manufacturing a thermoelectric conversion module that eliminates the need for supports and solder materials, allows collective and efficient production of a plurality of thin thermoelectric conversion modules, and includes the following steps (A) to (D): (A) disposing a chip of a P-type thermoelectric conversion material and a chip of an N-type thermoelectric conversion material on a support so as to be spaced apart from each other; (B) filling an insulator between the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material to obtain an integrated body including the chip of the P-type thermoelectric conversion material, the chip of the N-type thermoelectric conversion material, and the insulator; (C) peeling the integrated body obtained in step (B) from the support; and (D) connecting the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material via an electrode in the integrated body after step (C).

公开(公告)号：US11581471B2

公开(公告)日：2023-02-14

申请号：US17282047

申请日：2019-10-02

Applicant: LINTEC CORPORATION

Inventor： Tsuyoshi Muto ,  Kunihisa Kato ,  Taku Nemoto ,  Wataru Morita ,  Yuta Seki

IPC: H01L35/34 ,  H01L35/32

Abstract: A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

公开(公告)号：US10403807B2

公开(公告)日：2019-09-03

申请号：US14396527

申请日：2013-04-17

Applicant: LINTEC CORPORATION

Inventor： Kunihisa Kato ,  Tsuyoshi Mutou

IPC: H01L35/08 ,  H01L35/16 ,  H01L35/32 ,  H01L35/34

Abstract: The present invention provides a thermoelectric conversion material having a reduced thermal conductivity and having an improved figure of merit, and a method for producing the material. The thermoelectric conversion material has, as formed on a resin substrate having recesses, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the resin substrate comprises one formed by curing a resin layer of a curable resin composition. The production method for the thermoelectric conversion material comprises a resin substrate formation step of transcribing a protruding structure from an original plate having the protruding structure onto a resin layer of a curable resin composition and curing the layer, and a film formation step of forming a thermoelectric semiconductor layer of a thermoelectric semiconductor material on the resin substrate.

公开(公告)号：US20150228879A1

公开(公告)日：2015-08-13

申请号：US14428141

申请日：2014-07-25

Applicant: LINTEC CORPORATION

Inventor： Kunihisa Kato ,  Tsuyoshi Mutou ,  Takeshi Kondo

IPC: H01L35/16 ,  H01L35/34

CPC classification number: H01L35/16 ,  H01L35/26 ,  H01L35/34

Abstract: The present invention provides a thermoelectric conversion material capable of being produced in a simplified manner and at a low cost and excellent in thermoelectric conversion characteristics and flexibility, and provides a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid comprises a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

Abstract translation: 本发明提供能够以简单的方式制造并且成本低且热电转换特性和柔性优异的热电转换材料，并且提供了一种制造该材料的方法。 热电转换材料在载体上具有含有热电半导体微粒，耐热树脂和离子液体的热电半导体组合物的薄膜。 在载体上具有含有热电半导体微粒，耐热树脂和离子液体的热电半导体组合物的薄膜的热电转换材料的制造方法包括：将含有热电半导体精细的热电半导体组合物 颗粒，耐热树脂和离子液体涂布到载体上并干燥以在其上形成薄膜，以及退火薄膜的步骤。

公开(公告)号：US11882766B2

公开(公告)日：2024-01-23

申请号：US17913522

申请日：2021-03-18

Applicant: LINTEC CORPORATION

Inventor： Wataru Morita ,  Kunihisa Kato ,  Yuta Seki

IPC: H10N10/852 ,  H10N10/17 ,  H10N10/857

CPC classification number: H10N10/852 ,  H10N10/17 ,  H10N10/857

Abstract: A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

公开(公告)号：US09944831B2

公开(公告)日：2018-04-17

申请号：US15021094

申请日：2014-09-24

Applicant: LINTEC CORPORATION

Inventor： Wataru Morita ,  Kunihisa Kato ,  Tsuyoshi Mutou

IPC: C09J7/00 ,  C09J9/02 ,  H01L35/32 ,  C09J9/00 ,  C09J11/04 ,  C09J175/04 ,  C09J183/04 ,  C09J201/00 ,  H01L35/30 ,  H01L35/34 ,  C08G18/62 ,  C08G18/81 ,  C08K3/08 ,  C08K3/22 ,  C08K3/28 ,  C08K3/38

CPC classification number: C09J7/00 ,  C08G18/6229 ,  C08G18/6254 ,  C08G18/8116 ,  C08K3/08 ,  C08K3/22 ,  C08K3/28 ,  C08K2003/385 ,  C08K2201/001 ,  C09J7/10 ,  C09J9/00 ,  C09J9/02 ,  C09J11/04 ,  C09J175/04 ,  C09J183/04 ,  C09J201/00 ,  C09J2201/40 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2475/00 ,  C09J2483/00 ,  H01L35/30 ,  H01L35/32 ,  H01L35/34

Abstract: The present invention provides a thermally conductive adhesive sheet that can be easily laminated on an electronic device without an adhesive layer therebetween and can further selectively dissipate heat in a particular direction to provide a sufficient temperature difference to the inside of the electronic device, a method for producing the same, and an electronic device using the same. The present invention includes a thermally conductive adhesive sheet comprising a high thermally conductive portion and a low thermally conductive portion, wherein the high thermally conductive portion and the low thermally conductive portion have adhesiveness, and the high thermally conductive portion and the low thermally conductive portion each independently constitute an entire thickness of the thermally conductive adhesive sheet, or at least either the high thermally conductive portion or the low thermally conductive portion constitutes a portion of a thickness of the thermally conductive adhesive sheet, and a method for producing the thermally conductive adhesive sheet, and an electronic device using the thermally conductive adhesive sheet.

公开(公告)号：US09691961B2

公开(公告)日：2017-06-27

申请号：US14382439

申请日：2013-02-19

Applicant: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION ,  LINTEC CORPORATION

Inventor： Kunihisa Kato ,  Chihaya Adachi ,  Koji Miyazaki ,  Teruaki Hayakawa

IPC: H01L35/16 ,  H01L35/22 ,  H01L35/30 ,  H01L35/32 ,  H01L35/34

CPC classification number: H01L35/30 ,  H01L35/16 ,  H01L35/32 ,  H01L35/34

Abstract: The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.

公开(公告)号：US09431593B2

公开(公告)日：2016-08-30

申请号：US14428141

申请日：2014-07-25

Applicant: LINTEC CORPORATION

Inventor： Kunihisa Kato ,  Tsuyoshi Mutou ,  Takeshi Kondo

IPC: H01L35/16 ,  H01L35/34 ,  H01L35/26

CPC classification number: H01L35/16 ,  H01L35/26 ,  H01L35/34

Abstract: The present invention provides a thermoelectric conversion material capable of being produced in a simplified manner and at a low cost and excellent in thermoelectric conversion characteristics and flexibility, and provides a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid comprises a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

Abstract translation: 本发明提供能够以简单的方式制造并且成本低且热电转换特性和柔性优异的热电转换材料，并且提供了一种制造该材料的方法。 热电转换材料在载体上具有含有热电半导体微粒，耐热树脂和离子液体的热电半导体组合物的薄膜。 在载体上具有含有热电半导体微粒，耐热树脂和离子液体的热电半导体组合物的薄膜的热电转换材料的制造方法包括：将含有热电半导体精细的热电半导体组合物 颗粒，耐热树脂和离子液体涂布到载体上并干燥以在其上形成薄膜，以及退火薄膜的步骤。