Abstract:
This invention relates to an optical pump device comprising a pump source optically connected to an optical divider comprising one input channel and n output channels, the input channel being capable of receiving a pump wave S derived from the source and the n output channels being capable of outputting n pump waves S1, . . . Sn, where n is an integer greater than 1. It also relates to the use of the pump device in an optical amplification device. The invention has applications in all domains in which several optical pumps are necessary, and more particularly in the domain of optical telecommunications, and for example for optical amplifiers.
Abstract:
A laser source includes a first optical element and a second optical element spaced apart from each other and defining a laser cavity therebetween. The laser cavity with a lasing material therein are capable of emitting an optical beam. The laser source also includes a guided optical element formed on a substrate. The guided optical element includes a mirror which is concave in at least one guide plane of an input guide area of the guided optical element. The mirror forms an extended laser cavity with the laser cavity. The guided optical element also includes a microguide associated with an optical output of the laser source. The microguide defines an output area of the guided optical element. The input guide area is capable of receiving the optical beam emitted by the laser cavity and capable of transmitting the optical beam to an adaptor guide area located between the input guide area and the microguide. The adaptor guide area is capable of guiding the optical beam to the microguide.
Abstract:
The invention relates to a microlaser cavity (10) having:a solid active medium (2) emitting at least in a wavelength range between 1.5 and 1.6 .mu.m, anda saturable absorber (4) of formula CaF.sub.2 :Co.sup.2+ or MgF.sub.2 :Co.sup.2+ or SrF.sub.2 :Co.sup.2+ or BaF.sub.2 :Co.sup.2+ or La.sub.0.9 Mg.sub.0.5-x Co.sub.x Al.sub.11.433 O.sub.19 or YAlO.sub.3 :Co.sup.2+ (or YAl.sub.5-2x Co.sub.x Si.sub.x O.sub.3) or Y.sub.3 Al.sub.5-x-y Ga.sub.x Sc.sub.y O.sub.12 :Co.sup.2+ (or .sub.-3 Al.sub.5-x-y2z Ga.sub.x Sc.sub.y Co.sub.z Si.sub.z O.sub.12) or Y.sub.3-x Lu.sub.x Al.sub.5 O.sub.12 Co.sup.2+ (or Y.sub.3-x Lu.sub.x Al.sub.5-2y Co.sub.y Si.sub.y O.sub.3) or Sr.sub.1-x Mg.sub.x La.sub.y Al.sub.12-y O.sub.12 :Co.sup.2+ (or Sr.sub.1-x Mg.sub.x-y Co.sub.y La.sub.z Al.sub.12-z O.sub.12, with o
Abstract:
The invention relates to a remote gas detection process comprising: the emission of a first radiation (4), at at least one absorption wavelength for the gas to be detected, with the aid of a first switched microlaser, in the direction of a test area (6), the production of a first signal (S), representative of the radiation quantity scattered by said gas in response to the interaction between the molecules or atoms of said gas and said first radiation. The invention also relates to an apparatus for performing this process.
Abstract:
A device for measuring the concentration of a gas contained in a cavity and for checking the operation of a catalytic element in an exhaust line in an automobile vehicle. A first emitter (E1) composed of an optical pumped micro-cavity and for which the emission spectrum is within the gas absorption band emits a first radiation that passes through the cavity. A second emitter emits a second radiation that passes through the cavity. A receptor measures the optical intensity (I) of the radiation that passed through the cavity.
Abstract:
An active coupling device enabling a light signal to be coupled to an optical component having a waveguide. The light signal has a first range of wavelengths. The active coupling device is configured to receive the light signal and to emit a light wave in a second range of wavelengths. The optical component comprises at least one input waveguide associated with a third range of wavelengths. The second range of wavelengths lies at least in part in the third range of wavelengths. The Active coupling device can be incorporated in an optical structure and can be useful in the fabrication of a structure including an optical component such as an optical amplifier, spectrum inverter or frequency converter.
Abstract:
The invention relates to a microlaser cavity (10) having: a solid active medium (2) emitting at least in a wavelength range between 1.5 and 1.6 &mgr;m, and a saturable absorber (4) of formula CaF2:Co2+ or MgF2:Co2+ or SrF2:Co2+ or BaF2:Co2+ or La0.9Mg0.5-xCoxAl11.433O19 or YalO3:Co2+ (or YAl5-2xCoxSixO3 YAl(1-2x)CoxSixO3) or Y3Al5-x-yGaxScyO12:Co2+ (or -3Al5-x-y2zGaxScyCozSizO12 Y3Al5-x-y-2zGaxScyCozSizO12) or Y3-xLuxAl5O12:Co2+ (or Y3-xLuxAl5-2yCoySiyO3) or Sr1-xMgxLayAl12-yO12:Co2+ (or Sr1-xMgx-yCoyLazAl12-zO12, with 0
Abstract:
The invention relates to a velocity measurement device of the coherent detection type comprising:an active laser medium (10),an input mirror (M.sub.1) and a first output mirror (M.sub.3) defining, with the laser medium, a first resonant cavity of quality factor Q.sub.max making it possible to emit a laser beam (4),a second output mirror (M.sub.2) defining, with the active laser medium (10) and the input mirror (M.sub.1), a second resonant cavity of quality factor Q.sub.min (
Abstract:
The invention relates to a laser cavity having an active laser medium and two mirrors forming a Fabry-Perot cavity, characterized in that the cavity is at the optical stability limit and in that there are means for varying the optical length of the cavity, so as to pass from an optically unstable state into a stable state.
Abstract:
A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure for ensuring electron excitation and creation of electron-holes.