Abstract:
A surface-emitting laser (“SEL”) having predictable filamentation initiation. The SEL includes a light generation layer and first and second mirror layers. The first and second mirror layers reflect light generated in the light generation region back toward the light generation region. Each of the mirrors reflects light such that it adds coherently to the light generated in the light generation region or to the light reflected from the other mirror. One of the mirrors includes a localized imperfection which causes light interacting therewith to be attenuated or shifted in phase relative to light that does not interact with the imperfection region. As a result, lasing filaments are preferentially initiated in the regions adjacent to the localized imperfection.
Abstract:
The most common method of testing the various aspects of light traveling in a waveguide includes tapping a portion of the light and directing the tapped portion at an appropriate sensor. Conventionally, the simplest method for tapping light utilized a fused fiber coupler; however, even this method requires additional fiber splicing and management steps that increase manufacturing costs. The present invention uses a beam splitter, positioned inside a centerpiece sleeve in the path of the light, to direct a portion of the beam through the wall of the centerpiece sleeve to a monitoring sensor, preferably a photodiode. The centerpiece sleeve includes a window, which is at least partially transparent to the light, enabling the tapped portion of the light to reach the monitoring sensor. Preferably, the centerpiece sleeve is manufactured entirely out of glass.
Abstract:
An optical cross-connect switch for routing light signals between N input optical fibers and M output optical fibers. The switch includes an NxM array of optical switching elements, each optical switching element routing a light signal from one of the input optical fibers to one of the output optical fibers. Each optical switching element includes a layer of a switching material, first and second transparent electrodes overlying the layer of switching material, and a layer of hydrogen reservoir material adjacent to the layer of switching material. The switching material has first and second states. The switching material is transparent to the light signals in the first state, and the switching material reflects the light signals in the second state. The state of the switching material is determined by the concentration of hydrogen in the material. The hydrogen reservoir material supplies hydrogen to the switching material when a first potential difference is applied between the first and second electrodes and absorbs hydrogen from the switching material when a second potential difference is applied between the first and second electrodes. The switching material preferably includes a material chosen from the group consisting of alkali, alkaline-earth, rare-earth metals, and the hydrides thereof.
Abstract:
An electrical contact that comprises a layer of a p-type gallium nitride material, a metal layer, and an intermediate layer of a material different from the gallium nitride material and the metal layer. The intermediate layer is sandwiched between the layer of p-type gallium nitride material and the metal layer. The material of the intermediate layer may be a Group III-V semiconductor that has high band-gap energy, lower than that of the p-type gallium nitride material. The intermediate layer may alternatively include layers of different Group III-V semiconductors. The layers of the different Group III-V semiconductors are arranged in order of their band-gap energies, with the Group III-V semiconductor having the highest band-gap energy next to the layer of the p-type gallium nitride material, and the Group III-V semiconductor having the lowest band-gap energy next to the metal layer. As a further alternative, the material of the intermediate layer may be a metal nitride. As a yet further alternative, the material of the intermediate layer may be a gallium nitride material in which a percentage of the nitrogen atoms are replaced by a mole fraction x of atoms of at least one other Group V element. The value of x is close to zero next to the p-type gallium nitride material, and is substantially greater next to the metal layer. This intermediate layer may alternatively be sandwiched between a layer of n-type gallium nitride material and a metal layer to make an n-contact.
Abstract:
A method of precisely mounting a planar optical component on a mounting member includes the step of placing a plurality of balls on the mounting member to precisely define a geometric plane. The planar optical component is then placed against each of the balls on the mounting member such that the planar optical component is along the defined geometric plane on the mounting member. In addition, the planar optical component can also be mounted on the mounting member by first forming a groove in the mounting member. An end of the planar optical component is then shaped to match that of at least one wall of the groove. The planar optical component can then be placed in the groove such that the shaped end of the planar optical component is placed against the wall of the groove.
Abstract:
An optical isolator unit is aligned, assembled, and subsequently diced into smaller isolator chips for placement in a micro-optical bench, along with input and an output fiber coupling ball lenses. Polarizers (for polarization-dependent isolators) or birefringence walkoff crystals (for polarization-independent isolators) are aligned and then glued together with 45.degree. Faraday rotators using an optical-grade adhesive. The surfaces of the components are AR-coated to match the index of the optical-grade adhesive. An optical isolator unit formed in this manner is then diced into a plurality of optical isolator chips with a high-speed wafer saw. The optical isolator unit is preferably mounted on any one of its sides in such a way that only a smallest possible cutting depth is required for dicing, i.e., it is mounted such that a thinnest dimension of the isolator is presented for cutting, such that material loss due to cutting is reduced and delamination of the optical isolator chips is prevented.
Abstract:
A switch for selectively coupling light from an input optical fiber to a selected one of a plurality of output optical fibers. The switch includes a first carriage having one end of the input optical fiber attached thereto and a second carriage having the output optical fibers attached thereto such that one end of each of the output optical fiber lies between first and second distances with respect to the end of the input optical fiber when the output optical fiber is aligned with the input optical fiber. A lens that is fixed with respect to the end of the input optical fiber images light leaving the input optical fiber onto a plane lying between the first and second distances from the end of the input optical fiber. In one embodiment of the present invention, an encoder is integrated into the first and second carriages. The encoder includes an encoding input optical fiber having one end attached to the first carriage, the encoding input optical fiber being a single mode optical fiber. Light leaving the encoder is received by a second single mode optical fiber when the carriages are in a specified relationship to one another. The second single mode optical fiber can either be a fiber on the second carriage or encoding input optical fiber itself. In the later case, the second carriage includes a reflector which images the light from the encoding input optical fiber back into the encoding input optical fiber.
Abstract:
A dynamic logic circuit (AND or OR) utilizes one depletion-mode metal-semiconductor FET for precharging an internal node A, and a plurality of the same type of FETs in series, or a FET in parallel with one or more of the series connected FETs for implementing the logic function. A pair of FETs are connected to provide an output inverter with two series diodes for level shift. A coupling capacitor may be employed with a further FET to provide level shifting required between the inverter and the logic circuit output terminal. These circuits may be cascaded to form a domino chain.
Abstract:
Embodiments generally relate to micro-device arrays. In some embodiments, an array comprises a substrate and a plurality of micro-devices. Each micro-device is suspended over a cavity in the substrate by at least one lateral hinge attached to a side post formed into the substrate. Each micro-device comprises a bonding layer; a metal contact; semiconductor device layers; and a buffer layer. The semiconductor device layers may comprise GaN-based LED layers; wherein the buffer layer comprises AlGaN; and wherein the substrate comprises (111) oriented Silicon. In other cases, the semiconductor device layers may comprise InGaAsP-based LED layers; wherein the buffer layer comprises InGaP; and wherein the substrate comprises GaAs.
Abstract:
Optical switches can include collimator elements that accommodate two or more optical ports. This increases the number of ports the switch can accommodate without having to increase the size of other optical components within the switch. Separate deflectors can be used to accommodate optical signals from two different groups of ports. In some embodiments cross-coupling of signals between the two groups can be accomplished through use of re-direction optics.