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公开(公告)号:US20060211260A1
公开(公告)日:2006-09-21
申请号:US11214544
申请日:2005-08-29
申请人: Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
发明人: Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
IPC分类号: H01L21/31
CPC分类号: H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
摘要翻译: 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。 间距倍增通过对光致抗蚀剂进行图案化,然后将该图案蚀刻成无定形碳层来实现。 然后在无定形碳的侧壁上形成侧壁间隔物。 去除无定形碳,留下限定第一掩模图案的侧壁间隔物。 然后将底部抗反射涂层(BARC)沉积在间隔物周围以形成平坦表面,并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案,然后将其转印到BARC。 通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层,并且图案经受碳带以去除BARC和光致抗蚀剂材料。 然后将组合图案转移到氧化硅层,然后转移到无定形碳掩模层。 具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。
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公开(公告)号:US20070128856A1
公开(公告)日:2007-06-07
申请号:US11670296
申请日:2007-02-01
申请人: Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
发明人: Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
IPC分类号: H01L21/4763
CPC分类号: H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
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公开(公告)号:US20070161251A1
公开(公告)日:2007-07-12
申请号:US11681027
申请日:2007-03-01
申请人: Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
发明人: Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
IPC分类号: H01L21/302
CPC分类号: H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
摘要翻译: 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。 间距倍增通过对光致抗蚀剂进行图案化,然后将该图案蚀刻成无定形碳层来实现。 然后在无定形碳的侧壁上形成侧壁间隔物。 去除无定形碳,留下限定第一掩模图案的侧壁间隔物。 然后将底部抗反射涂层(BARC)沉积在间隔物周围以形成平坦表面,并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案,然后将其转印到BARC。 通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层,并且图案经受碳带以去除BARC和光致抗蚀剂材料。 然后将组合图案转移到氧化硅层,然后转移到无定形碳掩模层。 具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。
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公开(公告)号:US20070138526A1
公开(公告)日:2007-06-21
申请号:US11669840
申请日:2007-01-31
申请人: Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
发明人: Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
IPC分类号: H01L29/94
CPC分类号: H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
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15.
公开(公告)号:US10162932B2
公开(公告)日:2018-12-25
申请号:US13672781
申请日:2012-11-09
申请人: Puneet Sharma , Lucian Mihai Itu , Bogdan Georgescu , Viorel Mihalef , Ali Kamen , Dorin Comaniciu
发明人: Puneet Sharma , Lucian Mihai Itu , Bogdan Georgescu , Viorel Mihalef , Ali Kamen , Dorin Comaniciu
摘要: A method and system for multi-scale anatomical and functional modeling of coronary circulation is disclosed. A patient-specific anatomical model of coronary arteries and the heart is generated from medical image data of a patient. A multi-scale functional model of coronary circulation is generated based on the patient-specific anatomical model. Blood flow is simulated in at least one stenosis region of at least one coronary artery using the multi-scale function model of coronary circulation. Hemodynamic quantities, such as fractional flow reserve (FFR), are computed to determine a functional assessment of the stenosis, and virtual intervention simulations are performed using the multi-scale function model of coronary circulation for decision support and intervention planning.
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16.
公开(公告)号:US20150305706A1
公开(公告)日:2015-10-29
申请号:US14259801
申请日:2014-04-23
申请人: Jingjing Kanik , Puneet Sharma , Tommaso Mansi , Razvan Ionasec , Ali Kamen , Dorin Comaniciu , James S. Duncan
发明人: Jingjing Kanik , Puneet Sharma , Tommaso Mansi , Razvan Ionasec , Ali Kamen , Dorin Comaniciu , James S. Duncan
IPC分类号: A61B8/08
CPC分类号: A61B8/0883 , A61B8/5223 , A61B8/5276
摘要: A mechanical property of anatomy is estimated from a patient in vivo, such as estimating a patient-specific material property of a valve. A morphological model is used to determine anatomy dynamics. A biomechanical model, using the anatomy dynamics, predicts the dynamics, based, at least in part, on one or more material properties. Using an inverse solution based on comparison of dynamics predicted by the biomechanical model and the dynamics determined from the morphological model, values for the material properties are determined.
摘要翻译: 从患者身体估计解剖学的机械性质,例如估计瓣膜的患者特异性材料性质。 使用形态学模型来确定解剖动力学。 使用解剖动力学的生物力学模型预测动力学,至少部分地基于一种或多种材料性质。 使用基于生物力学模型预测的动力学与从形态学模型确定的动力学的比较的逆解决方案,确定材料性质的值。
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公开(公告)号:US08965084B2
公开(公告)日:2015-02-24
申请号:US13744857
申请日:2013-01-18
申请人: Viorel Mihalef , Puneet Sharma , Thomas Redel , Ali Kamen
发明人: Viorel Mihalef , Puneet Sharma , Thomas Redel , Ali Kamen
CPC分类号: G16H50/50 , A61B6/032 , A61B6/486 , A61B6/504 , A61B6/5217 , G06T19/00 , G06T2210/41
摘要: A method for modeling blood flow through a flow diverter includes receiving a medical image containing blood vessels. Vessel geometry is extracted from the received medical image. Inlets and outlets are tagged within the extracted vessel geometry. A desired flow diverter is selected. A model of the selected flow diverter is generated within the imaged blood vessel, the model representing the flow diverter as a tube having a porous surface characterized by a viscous resistance and an inertial resistance. A course of blood flow though the flow diverter is predicted based on the generated model, the extracted vessel geometry, and the tagged inlets and outlets.
摘要翻译: 通过流转向器对血液流动进行建模的方法包括接收包含血管的医学图像。 从接收到的医学图像中提取血管几何。 进口和出口在提取的容器几何中被标记。 选择所需的分流器。 所选流量分流器的模型在成像的血管内产生,该模型表示流量分流器为具有以粘性阻力和惯性阻力为特征的多孔表面的管。 基于生成的模型,提取的血管几何形状和标记的入口和出口预测通过流量分流器的血液流动过程。
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18.
公开(公告)号:US08898614B2
公开(公告)日:2014-11-25
申请号:US12762439
申请日:2010-04-19
申请人: Puneet Sharma , Magdy S. Abadir , Scott P. Warrick
发明人: Puneet Sharma , Magdy S. Abadir , Scott P. Warrick
CPC分类号: G06F17/5072 , G06F2217/12 , G06F2217/78 , Y02P90/265
摘要: A method includes preferentially placing fill regions adjacent to transistors of a particular conductivity type, such as p-channel transistors, for a plurality of standard cell instances of a device design. The method also includes evaluating all transistors of the first conductivity type prior to evaluating any transistors of a second conductivity type. The second conductivity type is opposite the first conductivity type. For each transistor being evaluated, it is determined whether a criterion is me. A fill region is placed within a field isolation region adjacent to the transistor if the criterion is met.
摘要翻译: 一种方法包括为设备设计的多个标准单元实例优先地将与特定导电类型的晶体管(例如p沟道晶体管)相邻的填充区域放置。 该方法还包括在评估第二导电类型的任何晶体管之前评估第一导电类型的所有晶体管。 第二导电类型与第一导电类型相反。 对于正在评估的每个晶体管,确定一个标准是否为我。 如果满足标准,则将填充区域放置在与晶体管相邻的场隔离区域内。
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公开(公告)号:US20140132315A1
公开(公告)日:2014-05-15
申请号:US13677800
申请日:2012-11-15
IPC分类号: H03L7/00
CPC分类号: G01R31/3016 , G01R31/2884
摘要: An integrated circuit including a degradation monitoring circuit. The degradation monitoring circuit includes a comparison circuit having a delay element including an input coupled to a data node of a timing path and having an output to provide a delayed signal of a data signal of the data node. The comparison circuit includes a logic comparator that provides a logic comparison between a data signal of the data node and the output of the delay element. The monitoring circuit includes a sampling circuit that provides a sampled signal of the output of the logic comparator that is a sampled with respect to a clock signal of the clock signal line. The monitoring circuit includes a hold circuit that provides a signal indicative of a data signal of the data node transitioning within a predetermined time of an edge transition of a clock signal of the clock signal line.
摘要翻译: 一种包括劣化监测电路的集成电路。 劣化监视电路包括具有延迟元件的比较电路,该延迟元件包括耦合到定时路径的数据节点的输入,并具有输出以提供数据节点的数据信号的延迟信号。 比较电路包括逻辑比较器,其提供数据节点的数据信号和延迟元件的输出之间的逻辑比较。 监视电路包括采样电路,该采样电路提供对于时钟信号线的时钟信号采样的逻辑比较器的输出的采样信号。 监视电路包括保持电路,该保持电路提供指示在时钟信号线的时钟信号的边沿转换的预定时间内数据节点的数据信号的信号。
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公开(公告)号:US20140088935A1
公开(公告)日:2014-03-27
申请号:US14025039
申请日:2013-09-12
申请人: Lucian Mihai Itu , Puneet Sharma , Ali Kamen , Dorin Comaniciu
发明人: Lucian Mihai Itu , Puneet Sharma , Ali Kamen , Dorin Comaniciu
IPC分类号: G06F19/12
摘要: A method for modeling a blood vessel includes: (a) modeling a first segment of the blood vessel based on medical imaging data acquired from a subject; (b) computing a first modeling parameter at an interior point of the first segment; and (c) computing a second modeling parameter at a boundary point of the first segment using a viscoelastic wall model. Systems for modeling a blood vessel are described
摘要翻译: 一种用于对血管建模的方法包括:(a)基于从受试者获得的医学成像数据对血管的第一段进行建模; (b)计算第一段的内部点处的第一建模参数; 和(c)使用粘弹性壁模型在第一段的边界点处计算第二建模参数。 描述了对血管建模的系统
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