Generation of an optical PAM-4 signal in a Mach-Zehnder modulator

    公开(公告)号:US11630369B2

    公开(公告)日:2023-04-18

    申请号:US17405101

    申请日:2021-08-18

    Abstract: Embodiments are disclosed for generating an optical Pulse Amplitude Modulation 4-level (PAM-4) signal from bandwidth-limited duobinary electrical signals in a Mach-Zehnder modulator. An example system includes an MZM structure that comprises a first waveguide interferometer arm structure associated with a first semiconductor device and a second waveguide interferometer arm structure associated with a second semiconductor device. A polybinary electrical signal is applied to or between the first semiconductor device and the second semiconductor device to convert an input optical signal provided to the MZM structure into an optical PAM-4 signal.

    OPTICAL NETWORK SYSTEM
    14.
    发明申请

    公开(公告)号:US20210176543A1

    公开(公告)日:2021-06-10

    申请号:US16823387

    申请日:2020-03-19

    Abstract: In one embodiment, an optical network system including a plurality of optical switches configured to switch beams of light which are modulated to carry information, a plurality of host computers comprising respective optical network interface controllers (NICs), optical fibers connecting the optical NICs and the optical switches forming an optically-switched communication network, over which optical circuit connections are established between pairs of the optical NICs over ones of the optical fibers via ones of the optical switches, the optically-switched communication network which including the optical NICs and the optical switches.

    High modulation speed PIN-type photodiode

    公开(公告)号:US12278304B2

    公开(公告)日:2025-04-15

    申请号:US17249140

    申请日:2021-02-22

    Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.

    Efficient parallelized computation of a Benes network configuration

    公开(公告)号:US20240291776A1

    公开(公告)日:2024-08-29

    申请号:US18655261

    申请日:2024-05-05

    CPC classification number: H04L49/254

    Abstract: A routing controller (30) includes an interface (68) and multiple processors (60). The interface is configured to receive a permutation (76) defining requested interconnections between N input ports and N output ports of a Benes network (24). The Benes network includes multiple 2-by-2 switches (42), and is reducible in a plurality of nested subnetworks associated with respective nesting levels, down to irreducible subnetworks including a single 2-by-2 switch. The multiple processors are configured to collectively determine a setting of the 2-by-2 switches that implements the received permutation, including determining sub-settings for two or more subnetworks of a given nesting level in parallel, and to configure the multiple 2-by-2 switches of the Benes network in accordance with the determined setting.

    Consolidating multiple electrical data signals into an optical data signal on a multi-chip module using ASIC for controlling a photonics transceiver

    公开(公告)号:US11791903B2

    公开(公告)日:2023-10-17

    申请号:US17608170

    申请日:2019-05-13

    CPC classification number: H04B10/524 G02F1/212 G02F1/225

    Abstract: A multi-chip module (MCM-10) includes a substrate (11), one or more photonic chips (14) disposed on the substrate, and an electronic chip (12) disposed on the substrate. The one or more photonic chips include one or more optical channels (22), which are configured to guide propagating optical signals, and two or more photonic modulator-segments (18) coupled to each of the optical channels, each photonic modulator-segment configured to modulate the propagating optical signals responsively to digitally modulated driving electrical signals provided thereto. The electronic chip is configured to generate the digitally modulated driving electrical signals on multiple different lanes (16) of the electronic chip, synchronize the driving electrical signals on the multiple lanes to a same clock, separately control respective phases of the driving electrical signals, fine-tune the voltages of the driving electrical signals on the multiple lanes, and drive the photonic modulator-segments on the photonic chips with the synchronized and phase-controlled driving electrical signals.

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