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公开(公告)号：US20240288639A1
公开(公告)日：2024-08-29
申请号：US18119630
申请日：2023-03-09
Applicant: Mellanox Technologies, Ltd.
Inventor： Roy Rudnick , Elad Mentovich , Isabelle Cestier , Ran Hasson Ruso , Dimitrios Kalavrouziotis , Anna Sandomirsky , Vladimir Iakovlev
IPC: G02B6/42
CPC classification number: G02B6/4237 , G02B6/4214 , G02B6/4243 , G02B6/4244
Abstract: Multiple methods are provided for fiber optic welding on a photonic integrated circuit (PIC). An example method includes providing a PIC, forming an attachment surface on the PIC configured to receive an optical fiber. The method further includes disposing at least a portion of the optical fiber on the attachment surface. The method may then include welding the optical fiber to secure the optical fiber with respect to the attachment surface. The attachment surface may be comprised of substantially the same material as an outer portion of the optical fiber and may result in a homogenous weld securing and connecting the optical fiber to the PIC.
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公开(公告)号：US11588299B2
公开(公告)日：2023-02-21
申请号：US16841824
申请日：2020-04-07
Applicant: Mellanox Technologies, Ltd.
Inventor： Vladimir Iakovlev , Yuri Berk , Elad Mentovich , Tamir Sharkaz
IPC: H01S5/18 , H01S5/183 , H01S5/042 , H01S5/30 , H01S5/00 , H01S5/20 , H01S5/02 , H01S5/343 , H01L21/18 , H01L21/02 , H01L21/306 , H01L21/283 , H01L21/32
Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.
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公开(公告)号：US20220246781A1
公开(公告)日：2022-08-04
申请号：US17249140
申请日：2021-02-22
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , Itshak Kalifa , Paraskevas Bakopoulos
IPC: H01L31/105 , H01L31/0304
Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.
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公开(公告)号：US12278304B2
公开(公告)日：2025-04-15
申请号：US17249140
申请日：2021-02-22
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , Itshak Kalifa , Paraskevas Bakopoulos
IPC: H01L31/105 , H01L31/0304
Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.
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公开(公告)号：US11611195B2
公开(公告)日：2023-03-21
申请号：US17138623
申请日：2020-12-30
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , Itshak Kalifa
Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.
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Patent Agency Ranking
公开(公告)号：US20220376476A1
公开(公告)日：2022-11-24
申请号：US17303050
申请日：2021-05-19
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Anders Larsson , Itshak Kalifa , Matan Galanty , Isabelle Cestier , Elad Mentovich
Abstract: Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.
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公开(公告)号：US20240380184A1
公开(公告)日：2024-11-14
申请号：US18144984
申请日：2023-05-09
Applicant: Mellanox Technologies, Ltd.
Inventor： Vladimir Iakovlev , Yuri Berk , Isabelle Cestier , Elad Mentovich
Abstract: Some embodiments of the present invention are directed to a tunnel junction for a vertical-cavity surface-emitting laser (VCSEL) that controls optical and current confinement within the VCSEL. The tunnel junction may define an electrical current injection area and an optical aperture for the VCSEL and may include a heavily p++ doped p-type material and a heavily n++ doped n-type material disposed on the p-type material. At least a portion of the outer edges of the n-type material are etched such that the n-type material has a cross-sectional area that is less than a cross-sectional area of the p-type material. By removing a portion of n-type material near the outer edge of the tunnel junction, a sloped effective refractive index is formed, and an effective area of the tunnel junction is changed, which increases the overlap of the current density and the optical field of the VCSEL.
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公开(公告)号：US11769989B2
公开(公告)日：2023-09-26
申请号：US17249224
申请日：2021-02-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Isabelle Cestier , Elad Mentovich
CPC classification number: H01S5/34306 , H01S5/021 , H01S5/18308 , H01S5/18366 , H01S5/2086 , H01S5/3095 , H01S5/068 , H01S5/18344 , H01S5/3416 , H01S5/34313 , H01S5/34366
Abstract: VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.
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公开(公告)号：US11728623B2
公开(公告)日：2023-08-15
申请号：US17247401
申请日：2020-12-10
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich
CPC classification number: H01S5/18347 , H01S5/18311 , H01S5/18377 , H01S5/2275 , H01S5/3095 , H01S5/3401 , H01S5/423
Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.
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公开(公告)号：US20210184432A1
公开(公告)日：2021-06-17
申请号：US17247401
申请日：2020-12-10
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich
Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.
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