APPARATUSES AND METHODS INCLUDING MEMORY COMMANDS FOR SEMICONDUCTOR MEMORIES

    公开(公告)号:US20230214335A1

    公开(公告)日:2023-07-06

    申请号:US18149817

    申请日:2023-01-04

    Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

    Adjustable column address scramble using fuses

    公开(公告)号:US11488685B2

    公开(公告)日:2022-11-01

    申请号:US17308448

    申请日:2021-05-05

    Abstract: Methods, systems, and devices for adjustable column address scramble using fuses are described. A testing device may detect a first error in a first column plane of a memory array and a second error in a second column plane of the memory array. The testing device may identify a first column address of the first column plane associated with the first error and a second column address of the second column plane based on detecting the first error and the second error. The testing device may determine, for the first column plane, a configuration for scrambling column addresses of the first column plane to different column addresses of the first column plane. In some cases, the testing device may perform a fuse blow of a fuse associated with the first column plane to implement the determined configuration.

    Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

    公开(公告)号:US11482989B2

    公开(公告)日:2022-10-25

    申请号:US17119664

    申请日:2020-12-11

    Inventor: Dean Gans

    Abstract: Apparatuses and methods for calibrating adjustable impedances of a semiconductor device are disclosed in the present application. An example apparatus includes a register configured to store impedance calibration information and further includes programmable termination resistances having a programmable impedance. The example apparatus further includes an impedance calibration circuit configured to perform a calibration operation to determine calibration parameters for setting the programmable impedance of the programmable termination resistances. The impedance calibration circuit is further configured to program the impedance calibration information in the register related to the calibration operation.

    Frequency synthesis for memory input-output operations

    公开(公告)号:US10796746B2

    公开(公告)日:2020-10-06

    申请号:US16138621

    申请日:2018-09-21

    Abstract: A memory channel including an internal clock circuit is disclosed. The clock circuit may synthesize an internal clock signal for use by one or more components of the memory channel. The internal clock signal may have a different frequency than an external clock frequency. The memory channel may include multiple clock circuits that generate multiple internal clock signals. Each portion of the memory channel associated with a different clock circuit may be phase and/or frequency independent of the other portions of the memory channel. The clock circuit may synthesize an internal clock signal based on an external clock signal. The clock circuit may use encoded timing data from an encoded I/O scheme to align the phase of the internal clock signal to a data signal.

    Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

    公开(公告)号:US10348270B2

    公开(公告)日:2019-07-09

    申请号:US15834892

    申请日:2017-12-07

    Inventor: Dean Gans

    Abstract: Apparatuses and methods for calibrating adjustable impedances of a semiconductor device are disclosed in the present application. An example apparatus includes a register configured to store impedance calibration information and further includes programmable termination resistances having a programmable impedance. The example apparatus further includes an impedance calibration circuit configured to perform a calibration operation to determine calibration parameters for setting the programmable impedance of the programmable termination resistances. The impedance calibration circuit is further configured to program the impedance calibration information in the register related to the calibration operation.

    Apparatuses and methods including memory commands for semiconductor memories

    公开(公告)号:US11550741B2

    公开(公告)日:2023-01-10

    申请号:US17167475

    申请日:2021-02-04

    Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

    APPARATUSES AND METHODS FOR CALIBRATING ADJUSTABLE IMPEDANCES OF A SEMICONDUCTOR DEVICE

    公开(公告)号:US20210099160A1

    公开(公告)日:2021-04-01

    申请号:US17119664

    申请日:2020-12-11

    Inventor: Dean Gans

    Abstract: Apparatuses and methods for calibrating adjustable impedances of a semiconductor device are disclosed in the present application. An example apparatus includes a register configured to store impedance calibration information and further includes programmable termination resistances having a programmable impedance. The example apparatus further includes an impedance calibration circuit configured to perform a calibration operation to determine calibration parameters for setting the programmable impedance of the programmable termination resistances. The impedance calibration circuit is further configured to program the impedance calibration information in the register related to the calibration operation.

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