公开(公告)号：US5434441A

公开(公告)日：1995-07-18

申请号：US285535

申请日：1994-08-04

申请人： Shunsuke Inoue ,  Toru Koizuki ,  Mamoru Miyawaki ,  Shigetoshi Sugawa

发明人： Shunsuke Inoue ,  Toru Koizuki ,  Mamoru Miyawaki ,  Shigetoshi Sugawa

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L27/13

CPC分类号： H01L27/1203

摘要： A semiconductor device has an NMOS transistor and a PMOS transistor formed on at least one monocrystal Si region formed in a thin-film Si layer formed on an insulation layer. The thickness T.sub.BOX of the insulation layer on which the NMOS and PMOS transistors are formed, the voltage V.sub.SS of a low-voltage power supply and the voltage V.sub.DD of a high-voltage power supply for the NMOS and PMOS transistors satisfy a relationship expressed by the following inequality:T.sub.BOX >(V.sub.DD -V.sub.SS -K.sub.2)/K.sub.1where K.sub.1 .tbd..epsilon..sub.BOX.sup.-1 (Q.sub.BN +Q.sub.BP), K.sub.2 .tbd..phi..sub.FN +.phi..sub.FP, .epsilon..sub.BOX is the dielectric constant of the base insulation layer, Q.sub.BN and Q.sub.BP are bulk charges when the widths of depletion layers of the NMOS and PMOS transistors are maximized, and .phi..sub.FN and .phi..sub.FP are pseudo Fermi potentials of the NMOS and PMOS transistors.

摘要翻译： 半导体器件具有形成在形成在绝缘层上的薄膜Si层中形成的至少一个单晶Si区上的NMOS晶体管和PMOS晶体管。 形成NMOS和PMOS晶体管的绝缘层的厚度TBOX，低压电源的电压VSS和NMOS和PMOS晶体管的高压电源的电压VDD满足由 以下不等式：TBOX>（VDD-VSS-K2）/ K1其中K1 3BONDεBOX-1（QBN + QBP），K2 3BOND phi FN + phi FP，εBOX是基极绝缘层的介电常数，QBN和QBP是 当NMOS和PMOS晶体管的耗尽层的宽度最大化时，大量电荷，以及phi FN和phi FP是NMOS和PMOS晶体管的伪费米电位。

公开(公告)号：US06407442B2

公开(公告)日：2002-06-18

申请号：US08548545

申请日：1995-10-26

申请人： Shunsuke Inoue ,  Mamoru Miyawaki ,  Tetsunobu Kochi

发明人： Shunsuke Inoue ,  Mamoru Miyawaki ,  Tetsunobu Kochi

IPC分类号： H01L2900

CPC分类号： H01L27/1203 ,  H01L27/1211 ,  H01L29/785

摘要： In a semiconductor device which has capacitors respectively connected to multiple input terminals, and in which the remaining terminals of the capacitors are commonly connected to a sense amplifier, the capacitors and the sense amplifier are formed by utilizing a semiconductor layer on an insulating surface, whereby high-speed, high-precision processing of signals having a large number of bits supplied from the multiple input terminals is realized by a small circuit scale.

摘要翻译： 在具有分别连接到多个输入端子的电容器并且其中电容器的其余端子共同连接到读出放大器的半导体器件中，通过在绝缘表面上利用半导体层形成电容器和读出放大器，由此 通过小电路规模实现了从多个输入端子提供的具有大量位的信号的高速，高精度处理。

公开(公告)号：US6096582A

公开(公告)日：2000-08-01

申请号：US898992

申请日：1997-07-23

申请人： Shunsuke Inoue ,  Mamoru Miyawaki ,  Tetsunobu Kohchi

发明人： Shunsuke Inoue ,  Mamoru Miyawaki ,  Tetsunobu Kohchi

IPC分类号： H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/66772 ,  H01L21/76264 ,  H01L21/8238 ,  H01L27/0688 ,  H01L27/1203 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/78684 ,  H01L21/76275 ,  H01L21/76281

摘要： A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. The insulating layers just below the source and drain regions are made thicker than an insulating layer just below the channel region. The method uses substrate bonding to achieve the device.

摘要翻译： 公开了一种制造半导体器件的方法，其中器件具有绝缘栅晶体管，其中源极和漏极区设置在形成在绝缘层上的单晶半导体层中，沟道区域插入在源极和漏极区之间。 源区和漏区正下方的绝缘层比沟道区正下方的绝缘层厚。 该方法使用基板粘合来实现该装置。

公开(公告)号：US5952694A

公开(公告)日：1999-09-14

申请号：US403580

申请日：1995-03-14

申请人： Mamoru Miyawaki ,  Yasushi Kawasumi ,  Shunsuke Inoue ,  Yutaka Akino ,  Toru Koizumi ,  Tetsunobu Kohchi

发明人： Mamoru Miyawaki ,  Yasushi Kawasumi ,  Shunsuke Inoue ,  Yutaka Akino ,  Toru Koizumi ,  Tetsunobu Kohchi

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/762 ,  H01L23/544 ,  H01L27/092 ,  H01L27/12 ,  H01L27/01 ,  H01L27/082 ,  H01L31/0392

CPC分类号： H01L21/3226 ,  H01L21/2007 ,  H01L21/76264 ,  H01L23/544 ,  H01L27/1203 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/76286 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L27/092 ,  H01L2924/0002

摘要： A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

摘要翻译： 具有形成在具有绝缘表面的基板上的半导体层的半导体器件包括通过从其主表面处理半导体层形成的第一区域和通过从另一个主表面处理半导体层而形成的第二区域，第一区域 和构成半导体功能元件，隔离区域等的第二区域。

公开(公告)号：US5815223A

公开(公告)日：1998-09-29

申请号：US940944

申请日：1997-09-30

申请人： Takanori Watanabe ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Tetsunobu Kochi

发明人： Takanori Watanabe ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Tetsunobu Kochi

IPC分类号： G02F1/1362 ,  H01L27/12 ,  G02F1/136 ,  G02F1/1333 ,  H01L23/58

CPC分类号： G02F1/13454 ,  H01L27/12 ,  G02F2001/136281 ,  G02F2202/104

摘要： A display device including a liquid crystal held between an active matrix substrate made up by arranging thin film transistors thereon, each using polycrystalline silicon as a semiconductor layer, in one-to-one relation to intersections between a plurality of signal lines and a plurality of scan lines, and an opposite substrate opposed to the active matrix substrate, wherein the active matrix substrate includes a film having tensile stress disposed at least below or above the semiconductor layer.

摘要翻译： 一种显示装置，包括：通过在其上排列薄膜晶体管构成的有源矩阵基板之间保持的液晶，每个使用多晶硅作为半导体层，与多个信号线与多个信号线之间的交点成一对一关系 扫描线和与有源矩阵基板相对的相对基板，其中有源矩阵基板包括具有设置在半导体层的至少下方或上方的拉伸应力的膜。

公开(公告)号：US5773355A

公开(公告)日：1998-06-30

申请号：US864904

申请日：1997-05-29

申请人： Shunsuke Inoue ,  Mamoru Miyawaki ,  Yoshihiko Fukumoto

发明人： Shunsuke Inoue ,  Mamoru Miyawaki ,  Yoshihiko Fukumoto

IPC分类号： H01L21/18 ,  H01L21/02 ,  H01L21/762 ,  H01L27/12 ,  H01L21/76

CPC分类号： H01L21/76251 ,  G02F2001/136281 ,  Y10S148/012

摘要： A semiconductor substrate includes a semiconductor layer, where the density of an impurity is reduced by out diffusion, provided on an insulating layer. In a method for manufacturing such a semiconductor substrate, a semiconductor substrate including a high-density impurity layer at the side of its surface is bonded to another substrate having an insulating layer. Thereafter, the semiconductor substrate is removed, and the impurity density of the remaining high-density impurity layer is reduced by out diffusion.

摘要翻译： 半导体衬底包括设置在绝缘层上的杂质浓度由于扩散而减小的半导体层。 在制造这种半导体衬底的方法中，将包括其表面侧的高密度杂质层的半导体衬底接合到具有绝缘层的另一衬底上。 此后，去除半导体衬底，并且通过扩散来减小剩余的高密度杂质层的杂质浓度。

公开(公告)号：US5700719A

公开(公告)日：1997-12-23

申请号：US414049

申请日：1995-03-30

申请人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

发明人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

IPC分类号： H01L23/52 ,  C23C14/56 ,  C23C16/04 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/532 ,  H01L29/49 ,  H01L21/443

CPC分类号： H01L29/4933 ,  C23C14/568 ,  C23C16/04 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53271 ,  H01L29/4925 ,  H01L2924/0002 ,  Y10S148/02

摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.

摘要翻译： 一种半导体器件，其中与相互不同的导电类型的半导体层接触并且用于至少连接相互不同的导电类型的层的电极布线包括主要由与主要成分相同的部件组成的第一部分 半导体层和由金属组成的第二部分。

公开(公告)号：US5691794A

公开(公告)日：1997-11-25

申请号：US189169

申请日：1994-01-31

申请人： Junichi Hoshi ,  Shigetoshi Sugawa ,  Shunsuke Inoue ,  Osamu Hamamoto ,  Yoshihiko Fukumoto ,  Yutaka Genchi ,  Masaru Kamio ,  Mamoru Miyawaki

发明人： Junichi Hoshi ,  Shigetoshi Sugawa ,  Shunsuke Inoue ,  Osamu Hamamoto ,  Yoshihiko Fukumoto ,  Yutaka Genchi ,  Masaru Kamio ,  Mamoru Miyawaki

IPC分类号： G02F1/1333 ,  G02F1/1362 ,  G02F1/136

CPC分类号： G02F1/13454 ,  G02F1/1333

摘要： A liquid crystal display device comprised of picture element electrodes provided on a first plane of a substrate and an opposed electrode placed opposedly to the picture element electrodes, between which a liquid crystal is carried, characterized in that in a region of the substrate corresponding to the picture element electrodes is formed a concave portion from the second plane opposite the first plane of the substrate, the region being light translucent, and the concave portion having a translucent material enclosed therein.

摘要翻译： 一种液晶显示装置，包括设置在基板的第一平面上的像素电极和与图像元件电极相对设置的相对电极，在该液晶显示装置之间具有液晶，其特征在于，在与所述基板对应的基板的区域中 图像元素电极从与基板的第一平面相对的第二平面形成为凹部，该区域是光透明的，并且凹部具有封闭在其中的半透明材料。

公开(公告)号：US5599741A

公开(公告)日：1997-02-04

申请号：US479385

申请日：1995-06-07

申请人： Shigeyuki Matsumoto ,  Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Jun Nakayama

发明人： Shigeyuki Matsumoto ,  Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Jun Nakayama

IPC分类号： H01L21/266 ,  H01L21/336 ,  H01L21/768 ,  H01L29/49 ,  H01L29/78 ,  H01L21/44 ,  H01L21/22

CPC分类号： H01L29/6659 ,  H01L21/266 ,  H01L21/76879 ,  H01L29/4925 ,  H01L29/66659 ,  H01L29/7835 ,  H01L29/7836

摘要： A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.

摘要翻译： 包括场效应晶体管的半导体器件具有形成在半导体衬底的主表面上的源极和漏极区域以及跨越栅极绝缘膜的主表面上形成的栅电极。 栅电极具有形成在第一电极部分上的具有供电子表面的第一电极部分和由金属组成的第二电极部分。

公开(公告)号：US5598037A

公开(公告)日：1997-01-28

申请号：US404746

申请日：1995-03-15

申请人： Shin Kikuchi ,  Mamoru Miyawaki ,  Genzo Monma ,  Hayao Ohzu ,  Shunsuke Inoue ,  Yoshio Nakamura ,  Takeshi Ichikawa ,  Osamu Ikeda ,  Tetsunobu Kohchi

发明人： Shin Kikuchi ,  Mamoru Miyawaki ,  Genzo Monma ,  Hayao Ohzu ,  Shunsuke Inoue ,  Yoshio Nakamura ,  Takeshi Ichikawa ,  Osamu Ikeda ,  Tetsunobu Kohchi

IPC分类号： H01L27/115 ,  H01L27/02 ,  H01L29/10

CPC分类号： H01L27/115 ,  H01L2924/0002

摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

摘要翻译： 一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域 形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。