公开(公告)号：US08836100B2

公开(公告)日：2014-09-16

申请号：US12955011

申请日：2010-11-29

Applicant: Mary Nadeau ,  Vipulkumar Patel ,  Prakash Gothoskar ,  John Fangman ,  John Matthew Fangman ,  Mark Webster

Inventor： Mary Nadeau ,  Vipulkumar Patel ,  Prakash Gothoskar ,  John Fangman ,  John Matthew Fangman ,  Mark Webster

IPC: H01L23/06 ,  G02B6/38

CPC classification number: G02B7/025 ,  G02B6/4228 ,  G02B6/4239 ,  G02B7/003 ,  H01L23/345 ,  H01L23/544 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2223/54426 ,  H01L2224/26175 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/83121 ,  H01L2224/83143 ,  H01L2224/83192 ,  H01L2224/83234 ,  H01L2224/83385 ,  H01L2224/83862 ,  H01L2924/14 ,  Y10T428/24479 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An arrangement for improving adhesive attachment of micro-components in an assembly utilizes a plurality of parallel-disposed slots formed in the top surface of the substrate used to support the micro-components. The slots are used to control the flow and “shape” of an adhesive “dot” so as to quickly and accurately attach a micro-component to the surface of a substrate. The slots are formed (preferably, etched) in the surface of the substrate in a manner that lends itself to reproducible accuracy from one substrate to another. Other slots (“channels”) may be formed in conjunction with the bonding slots so that extraneous adhesive material will flow into these channels and not spread into unwanted areas.

Abstract translation: 用于改善组件中微组件的粘合附着的装置利用形成在用于支撑微组件的衬底顶表面中的多个平行布置的槽。 这些槽用于控制粘合剂“点”的流动和“形状”，以便将微组件快速且精确地附着在基板的表面上。 在衬底的表面中形成（优选地，蚀刻）狭槽，使其自身具有从一个衬底到另一个衬底的可再现精度。 其它槽（“通道”）可以与结合槽结合形成，使得外来粘合剂材料将流入这些通道并且不会扩散到不需要的区域。

公开(公告)号：US08618625B2

公开(公告)日：2013-12-31

申请号：US13038470

申请日：2011-03-02

Applicant: Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

Inventor： Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

IPC: H01L31/0224

CPC classification number: H01L31/101 ,  H01L31/1085

Abstract: A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.

Abstract translation: 平面的基于波导的硅肖特基势垒光电检测器包括场板形式的第三端子，以提高检测器的响应度。 优选地，在其中形成其它硅化物接触区域的处理步骤期间形成用于检测区域的硅化物。 场板优选地形成为第一或第二CMOS金属化层的一部分，并且通过施加的电压来控制，以修改检测器硅化物层附近的电场。 通过修改电场，器件的响应度被“调谐”，以相对于器件的肖特基势垒调节“热”载流子（电子或空穴，取决于硅的导电性）的动量。 所施加的电位功能与“硅”载体的优势方向“正常”硅硅化物界面的动量方向相一致，允许增加的数量移动到肖特基势垒上并增加产生的光电流。

公开(公告)号：US08363986B2

公开(公告)日：2013-01-29

申请号：US13029342

申请日：2011-02-17

Applicant: Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar ,  David Piede

Inventor： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar ,  David Piede

IPC: G02F1/035 ,  G02F1/01 ,  G02B6/26 ,  G02B6/42

CPC classification number: G02B6/12 ,  G02B6/26 ,  G02B26/00 ,  G02F1/025

Abstract: A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area.

Abstract translation: 具有控制器件的主体和栅极区域中的掺杂剂分布的高速硅基光学调制器降低了结构的串联电阻而不会引起实质的光功率损耗。 也就是说，在有源区域之外的区域中使用增加的掺杂剂值将允许降低串联电阻（从而增加器件的调制速度），而不会在信号损失中造成太大的惩罚。 调整栅极和体区内的掺杂剂分布，以显示接触区域中的高掺杂剂浓度与载流子集成窗口区域中的低掺杂剂浓度之间的中间值。

公开(公告)号：US08340529B2

公开(公告)日：2012-12-25

申请号：US12813562

申请日：2010-06-11

Applicant: Kalpendu Shastri ,  Bipin Dama ,  Vipulkumar Patel ,  Mark Webster

Inventor： Kalpendu Shastri ,  Bipin Dama ,  Vipulkumar Patel ,  Mark Webster

IPC: H04B10/12

CPC classification number: H04N7/22 ,  G09G5/006 ,  G09G2370/12 ,  G09G2370/18

Abstract: An HDMI interconnect arrangement is presented that performs a pulse-amplitude modulation (PAM) conversion of the TMDS audio/video signals in order to simultaneously transmit all three channels over a single optical fiber. The set of three audio/video TMDS channels is applied as an input to a PAM-8 optical modulator, which functions to encode the set of three channels onto an optically-modulated output signal. The modulated optical signal is thereafter coupled into an optical fiber within an active HDMI cable and transmitted to an HDMI receiver (sink). The TMDS CLK signal is not included in this conversion into the optical domain, but remains as a separate electrical signal to be transmitted along a copper signal path within the active HDMI cable.

Abstract translation: 呈现HDMI互连布置，其执行TMDS音频/视频信号的脉冲幅度调制（PAM）转换，以便通过单根光纤同时传输所有三个通道。 三组音频/视频TMDS通道的组合被用作PAM-8光调制器的输入，PAM-8光调制器用于将三个通道的组合编码到光调制的输出信号上。 调制的光信号此后耦合到有源HDMI电缆中的光纤中，并被传输到HDMI接收器（接收器）。 TMDS CLK信号不包含在该转换到光学域中，而是作为单独的电信号保持在有源HDMI电缆内的铜信号路径上传输。

公开(公告)号：US20120280344A1

公开(公告)日：2012-11-08

申请号：US13463408

申请日：2012-05-03

Applicant: Kalpendu Shastri ,  Vipulkumar Patel ,  Mark Webster ,  Prakash Gothoskar ,  Ravinder Kachru ,  Soham Pathak ,  Rao V. Yelamarty ,  Thomas Daugherty ,  Bipin Dama ,  Kaushik Patel ,  Kishor Desai

Inventor： Kalpendu Shastri ,  Vipulkumar Patel ,  Mark Webster ,  Prakash Gothoskar ,  Ravinder Kachru ,  Soham Pathak ,  Rao V. Yelamarty ,  Thomas Daugherty ,  Bipin Dama ,  Kaushik Patel ,  Kishor Desai

IPC: H01L31/12

CPC classification number: H01L25/50 ,  G02B6/423 ,  G02B6/4244 ,  G02B6/4245 ,  G02B6/4249 ,  G02B6/4257 ,  G02B6/426 ,  H01L25/167 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014

Abstract: A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules.

Abstract translation: 光电子收发器组件过程的晶片级实现利用硅晶片作为光学参考平面和平台，同时为多个单独的收发器模块组装所有必需的光学和电子部件。 特别地，硅晶片被用作平台（插入器），用于多个收发器模块的所有部件安装或集成在该平台上，硅插入器的顶表面用作用于定义光信号的参考平面 分离的光学元件之间的路径。 实际上，通过使用单个硅晶片作为大量单独的收发器模块的平台，可以使用晶片尺度组装过程以及这些模块的光学对准和测试。

公开(公告)号：US20070292075A1

公开(公告)日：2007-12-20

申请号：US11810591

申请日：2007-06-06

Applicant: Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Paulius Mindaugas Mosinskis ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Mark Webster

Inventor： Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Paulius Mindaugas Mosinskis ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Mark Webster

IPC: G02B6/12

CPC classification number: G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

Abstract: A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index

Abstract translation: 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一种可以容易地与硅基光学调制器结合。 对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率

公开(公告)号：US08121450B2

公开(公告)日：2012-02-21

申请号：US12316540

申请日：2008-12-11

Applicant: Mark Webster ,  Vipulkumar Patel ,  Mary Nadeau ,  Prakash Gothoskar ,  David Piede

Inventor： Mark Webster ,  Vipulkumar Patel ,  Mary Nadeau ,  Prakash Gothoskar ,  David Piede

IPC: G02B6/32 ,  G02B6/26 ,  G02B6/42

CPC classification number: G02B6/32 ,  G02B6/305 ,  G02B6/327

Abstract: A plasma-based etching process is used to specifically shape the endface of an optical substrate supporting an optical waveguide into a contoured facet which will improve coupling efficiency between the waveguide and a free space optical signal. The ability to use standard photolithographic techniques to pattern and etch the optical endface facet allows for virtually any desired facet geometry to be formed—and replicated across the surface of a wafer for the entire group of assemblies being fabricated. A lens may be etched into the endface using a properly-defined photolithographic mask, with the focal point of the lens selected with respect to the parameters of the optical waveguide and the propagating free space signal. Alternatively, an angled facet may be formed along the endface, with the angle sufficient to re-direct reflected/scattered signals away from the optical axis.

Abstract translation: 使用基于等离子体的蚀刻工艺来将支撑光波导的光学基板的端面特别地成形为轮廓刻面，这将提高波导与自由空间光信号之间的耦合效率。 使用标准光刻技术对光学端面小平面进行图案化和刻蚀的能力允许形成任何所需的刻面几何形状，并跨越制造的整组组件在晶片的表面上复制。 可以使用适当限定的光刻掩模将透镜蚀刻到端面中，相对于光波导的参数和传播的自由空间信号选择透镜的焦点。 或者，可以沿着端面形成成角度的小面，其角度足以将反射/散射信号重新引导远离光轴。

公开(公告)号：US20100316388A1

公开(公告)日：2010-12-16

申请号：US12813562

申请日：2010-06-11

Applicant: Kalpendu Shastri ,  Bipin Dama ,  Vipulkumar Patel ,  Mark Webster

Inventor： Kalpendu Shastri ,  Bipin Dama ,  Vipulkumar Patel ,  Mark Webster

IPC: H04B10/00

CPC classification number: H04N7/22 ,  G09G5/006 ,  G09G2370/12 ,  G09G2370/18

Abstract: An HDMI interconnect arrangement is presented that performs a pulse-amplitude modulation (PAM) conversion of the TMDS audio/video signals in order to simultaneously transmit all three channels over a single optical fiber. The set of three audio/video TMDS channels is applied as an input to a PAM-8 optical modulator, which functions to encode the set of three channels onto an optically-modulated output signal. The modulated optical signal is thereafter coupled into an optical fiber within an active HDMI cable and transmitted to an HDMI receiver (sink). The TMDS CLK signal is not included in this conversion into the optical domain, but remains as a separate electrical signal to be transmitted along a copper signal path within the active HDMI cable.

Abstract translation: 呈现HDMI互连布置，其执行TMDS音频/视频信号的脉冲幅度调制（PAM）转换，以便通过单根光纤同时传输所有三个通道。 三组音频/视频TMDS通道的组合被用作PAM-8光调制器的输入，PAM-8光调制器用于将三个通道的组合编码到光调制的输出信号上。 调制的光信号此后耦合到有源HDMI电缆中的光纤中，并被传输到HDMI接收器（接收器）。 TMDS CLK信号不包含在该转换到光学域中，而是作为单独的电信号保持在有源HDMI电缆内的铜信号路径上传输。

公开(公告)号：US07697793B2

公开(公告)日：2010-04-13

申请号：US12290285

申请日：2008-10-29

Applicant: Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

Inventor： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

IPC: G02B6/12 ,  G02F1/295

CPC classification number: G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

Abstract: A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which hen transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.

Abstract translation: 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一个可以容易地与硅基光学调制器结合。 对这些结构中的任一个施加直流电压将产生热量，母鸡转移到波导区域中。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率。

公开(公告)号：US07657130B2

公开(公告)日：2010-02-02

申请号：US12287366

申请日：2008-10-08

Applicant: Kalpendu Shastri ,  Prakash Gothoskar ,  Vipulkumar Patel ,  David Piede ,  Mark Webster

Inventor： Kalpendu Shastri ,  Prakash Gothoskar ,  Vipulkumar Patel ,  David Piede ,  Mark Webster

IPC: G02F1/035 ,  G02F1/01 ,  G02B6/12

CPC classification number: G02F1/0121 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/0152

Abstract: A silicon-insulator-silicon capacitive (SISCAP) optical modulator is configured to provide analog operation for applications which previously required the use of relatively large, power-consuming and expensive lithium niobate devices. An MZI-based SISCAP modulator (preferably a balanced arrangement with a SISCAP device on each arm) is responsive to an incoming high frequency electrical signal and is biased in a region where the capacitance of the device is essentially constant and the transform function of the MZI is linear.

Abstract translation: 硅 - 绝缘体 - 硅电容（SISCAP）光调制器被配置为为先前需要使用相对较大，耗电和昂贵的铌酸锂器件的应用提供模拟操作。 基于MZI的SISCAP调制器（优选地，在每个臂上具有SISCAP器件的平衡布置）响应于输入的高频电信号，并且被偏置在器件的电容基本上恒定的区域中，并且MZI的变换函数 是线性的