公开(公告)号：US20070150850A1

公开(公告)日：2007-06-28

申请号：US11636631

申请日：2006-12-11

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G06F17/50

CPC分类号： G03F1/86 ,  G03F1/36 ,  G03F1/84

摘要： According to an aspect of the invention, there is provided a photomask evaluation method including, acquiring a pattern image of a photomask, generating sidewall angle data on the sidewall angle of a pattern from the pattern image, extracting a pattern outline from the pattern image to generate outline data, and running a lithographic simulation on the basis of the outline data and the sidewall angle data to calculate an exposure margin.

摘要翻译： 根据本发明的一个方面，提供了一种光掩模评估方法，包括：获取光掩模的图案图像，从图案图像生成关于图案的侧壁角度的侧壁角数据，从图案图像提取图案轮廓 生成轮廓数据，并根据轮廓数据和侧角角数据运行光刻模拟计算曝光量。

公开(公告)号：US07094522B2

公开(公告)日：2006-08-22

申请号：US10969018

申请日：2004-10-21

申请人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

发明人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

IPC分类号： G03F7/30 ,  G03D15/00

CPC分类号： G03F7/30 ,  Y10S438/906

摘要： A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

摘要翻译： 一种显影方法包括：预先确定显影液中的抗蚀剂溶解浓度与显影液的抵抗溶解速度的关系，提前估计抗蚀剂溶解浓度，其中抗蚀剂溶解速度为所需速度或更高的关系，显影 在显影液中的抗蚀剂溶解浓度为估计的溶解浓度以下的状态。

公开(公告)号：US07001086B2

公开(公告)日：2006-02-21

申请号：US10968992

申请日：2004-10-21

申请人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

发明人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

IPC分类号： G03D5/04 ,  G03F7/30 ,  B08B5/04 ,  B65D3/00

CPC分类号： G03F7/30 ,  Y10S438/906

摘要： A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

公开(公告)号：US20050265592A1

公开(公告)日：2005-12-01

申请号：US11138408

申请日：2005-05-27

申请人： Mitsuyo Asano ,  Masamitsu Itoh ,  Eiji Yamanaka ,  Shinji Yamaguchi

发明人： Mitsuyo Asano ,  Masamitsu Itoh ,  Eiji Yamanaka ,  Shinji Yamaguchi

IPC分类号： G03F1/00 ,  G03F1/14 ,  G06F17/50 ,  G06K9/00

CPC分类号： G03F1/84 ,  G03F1/44 ,  G03F1/68

摘要： An image data correction method includes preparing correction data for correcting a distortion of an image obtained by an image acquiring section, acquiring outline data of a desired pattern obtained by the image acquiring section, and correcting the outline data of the desired pattern using the correction data.

摘要翻译： 图像数据校正方法包括：准备用于校正图像获取部分获得的图像失真的校正数据，获取由图像获取部分获得的期望图案的轮廓数据，并使用校正数据校正所需图案的轮廓数据 。

公开(公告)号：US20050244726A1

公开(公告)日：2005-11-03

申请号：US11147232

申请日：2005-06-08

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03B27/42 ,  G03C5/00 ,  G03F1/00 ,  G03F1/60 ,  G03F7/20 ,  G03F9/00 ,  H01L21/00 ,  H01L21/76

CPC分类号： G03F7/707 ,  G03F1/60 ,  G03F7/703 ,  G03F7/70433 ,  G03F7/70783 ,  Y10S438/975

摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

摘要翻译： 公开了一种用于曝光掩模的制造方法，其包括获取表示多个掩模基板中的每一个的表面的表面形状的第一信息，以及示出在夹持之前和之后每个掩模基板的表面的平坦度的第二信息 曝光装置的掩模台，形成每个掩模基板的对应关系，第一信息和第二信息，选择表示对应关系的第二信息之间的期望的平坦度的第二信息，以及准备另一掩模基板 表面形状作为由与所选择的第二信息的对应关系中的第一信息指示的表面形状，并且在上述另一掩模基板上形成期望的图案。

公开(公告)号：US06660455B2

公开(公告)日：2003-12-09

申请号：US09812688

申请日：2001-03-21

申请人： Masamitsu Itoh ,  Takehiro Kondoh

发明人： Masamitsu Itoh ,  Takehiro Kondoh

IPC分类号： G03F700

CPC分类号： G03F7/039 ,  G03F7/0045 ,  G03F7/38 ,  Y10S430/143

摘要： This invention provides a pattern formation material for electron beam lithography, which contains an alkali-soluble resin, a photoacid generator, and dissolution inhibiting groups, and also provides a pattern formation method and exposure mask fabrication method using the material. As the dissolution inhibiting groups, this invention uses a first dissolution inhibiting group which increases the sensitivity of the pattern formation material when the material is left to stand in a vacuum after an electron beam irradiation, and a second dissolution inhibiting group which decreases the sensitivity under the same condition. In this invention, the ratio of the first dissolution inhibiting group to the second dissolution inhibiting group is so adjusted that the size of an alkali-soluble portion, which is made soluble in an alkali solution by an electron beam irradiation, is substantially held constant independently of the standing time in a vacuum.

摘要翻译： 本发明提供一种电子束光刻用图案形成材料，其含有碱溶性树脂，光致酸发生剂和溶解抑制基团，并且还提供了使用该材料的图案形成方法和曝光掩模制造方法。 作为溶解抑制基团，本发明使用第一溶解抑制基团，其在电子束照射后在真空中放置材料时增加图案形成材料的灵敏度，以及降低灵敏度的第二溶解抑制基团 同样的条件。 在本发明中，第一溶解抑制基团与第二溶解抑制基团的比例被调整为使得通过电子束照射可溶于碱溶液的碱溶性部分的尺寸基本上保持恒定不变 的时间在真空中。

公开(公告)号：US06649310B2

公开(公告)日：2003-11-18

申请号：US09940578

申请日：2001-08-29

申请人： Masamitsu Itoh ,  Shigeki Nojima ,  Shoji Mimotogi ,  Osamu Ikenaga

发明人： Masamitsu Itoh ,  Shigeki Nojima ,  Shoji Mimotogi ,  Osamu Ikenaga

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F7/70558 ,  G03F7/70591 ,  G03F7/70625

摘要： A method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a photomask. determining an in-plane uniformity of the dimensions, determining an exposure latitude on the basis of the average value and the in-plane uniformity. The exposure latitude depends on dimensional accuracy of the pattern. Judging if the photomask is defective or non-defective is made on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude

摘要翻译： 制造光掩模的方法包括确定光掩模中图案的尺寸的平均值。 确定尺寸的面内均匀性，基于平均值和平面内均匀性确定曝光宽容度。 曝光宽容度取决于图案的尺寸精度。 根据曝光宽容度是否落在规定的曝光宽容范围内，判断光掩模是否有缺陷或无缺陷

公开(公告)号：US08771905B2

公开(公告)日：2014-07-08

申请号：US13491641

申请日：2012-06-08

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03F1/40

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/40

摘要： An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.

摘要翻译： 曝光掩模包括：绝缘基板; 设置在基板上的光反射膜; 设置在所述光反射膜上并在所述基板的中心区域形成图案的吸光膜; 以及设置在基板上的互连，光反射膜和光吸收膜不设置在围绕中心区域的框状区域中，并且布线被布置成使得由光反射膜构成的层叠膜的一部分 并且位于框状区域内的吸光膜与位于框状区域外的层叠膜的一部分电连接。

公开(公告)号：US20130001753A1

公开(公告)日：2013-01-03

申请号：US13423043

申请日：2012-03-16

申请人： Shingo Kanamitsu ,  Masamitsu Itoh

发明人： Shingo Kanamitsu ,  Masamitsu Itoh

IPC分类号： H01L29/06 ,  H01L21/30

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.

摘要翻译： 根据一个实施例，模板衬底包括衬底和掩模。 衬底包括形成在衬底的上表面的中心部分中的台面区域。 所述台面区域被构造为在所述台面区域周围突出多于所述基板的区域。 杂质被引入到台面区域的周边部分的部分区域的上层部分中。 掩模膜设置在基板的上表面上。

公开(公告)号：US20120241645A1

公开(公告)日：2012-09-27

申请号：US13416282

申请日：2012-03-09

申请人： Shinji YAMAGUCHI ,  Masato Naka ,  Hiroyuki Kashiwagi ,  Masamitsu Itoh

发明人： Shinji YAMAGUCHI ,  Masato Naka ,  Hiroyuki Kashiwagi ,  Masamitsu Itoh

IPC分类号： G01N21/88

CPC分类号： G03F1/84 ,  G01N23/225 ,  G01N2021/95676

摘要： According to one embodiment, a mask inspection apparatus includes a decompression chamber, a holder, a light irradiation unit, a detection unit, an electrode, and a control unit. The holder is provided in the decompression chamber and holds a mask. The light irradiation unit irradiates a major surface of the mask held by the holder with a light. The detection unit is provided in the decompression chamber to detect electrons generated when the major surface of the mask is irradiated with the light. The electrode is provided between the holder and the detection unit and guides the electrons in a direction from the holder toward the detection unit. The control unit compares a detection result of the electrons detected by the detection unit with a reference value.

摘要翻译： 根据一个实施例，掩模检查装置包括减压室，保持器，光照射单元，检测单元，电极和控制单元。 保持器设置在减压室中并保持面罩。 光照射单元用光照射由保持器保持的面罩的主表面。 检测单元设置在减压室中以检测当用光照射掩模的主表面时产生的电子。 电极设置在保持器和检测单元之间并且引导电子沿着保持器朝向检测单元的方向。 控制单元将由检测单元检测的电子的检测结果与参考值进行比较。