公开(公告)号：US5070272A

公开(公告)日：1991-12-03

申请号：US547226

申请日：1990-07-03

申请人： Takeshi Kikawa ,  Kazutaka Tsuji ,  Kenji Sameshima ,  Tadaaki Hirai ,  Junichi Yamazaki ,  Misao Kubota ,  Keiichi Shidara

发明人： Takeshi Kikawa ,  Kazutaka Tsuji ,  Kenji Sameshima ,  Tadaaki Hirai ,  Junichi Yamazaki ,  Misao Kubota ,  Keiichi Shidara

IPC分类号： H01J31/38 ,  H01J29/45 ,  H01J29/86 ,  H01J29/88 ,  H01L27/146 ,  H01L31/024 ,  H01L31/0272 ,  H01L31/0392 ,  H01L31/09

CPC分类号： H01L31/0392 ,  H01J29/45 ,  H01L31/024 ,  H01L31/0272 ,  H01L31/09 ,  Y02E10/50

摘要： A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.

公开(公告)号：US4330733A

公开(公告)日：1982-05-18

申请号：US152291

申请日：1980-05-22

申请人： Keiichi Shidara ,  Naohiro Goto ,  Tatsuro Kawamura ,  Eikyu Hiruma ,  Yohitsumu Ikeda ,  Kenkichi Tanioka ,  Tadaaki Hirai ,  Yukio Takasaki ,  Chushirou Kusano ,  Tsuyoshi Uda ,  Yasuhiko Nonaka

发明人： Keiichi Shidara ,  Naohiro Goto ,  Tatsuro Kawamura ,  Eikyu Hiruma ,  Yohitsumu Ikeda ,  Kenkichi Tanioka ,  Tadaaki Hirai ,  Yukio Takasaki ,  Chushirou Kusano ,  Tsuyoshi Uda ,  Yasuhiko Nonaka

IPC分类号： H01J29/45 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/08 ,  H01J31/38

CPC分类号： H01L31/02725 ,  H01J29/45

摘要： A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.

摘要翻译： 一种光电导体，其具有主要由Se制成的电极和P型导电层，并在与电极的界面处进行整流接触，至少在P型导电层的一部分中掺杂有Te。 在大部分P型导电层产生信号电流的区域中掺杂有至少一种金属氟化物，平均浓度不低于50ppm且不超过5重量％。 金属氟化物优选为选自LiF，NaF，MgF 2，CaF 2，BaF 2，AlF 3，CrF 3，MnF 2，CoF 2，PbF 2，CeF 3和TlF中的至少一种。 因此可以显着地降低光导目标的高光粘附。

公开(公告)号：US5101255A

公开(公告)日：1992-03-31

申请号：US384080

申请日：1989-07-24

申请人： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

发明人： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

IPC分类号： H01L31/0272 ,  H01L31/09

CPC分类号： H01L31/0272 ,  H01L31/095

摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

摘要翻译： 公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层，其显示电荷倍增，并将光信号转换为电信号; 以及具有用于读取电信号的电路等的基板（例如开关元件）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。

公开(公告)号：US4617248A

公开(公告)日：1986-10-14

申请号：US736149

申请日：1985-05-20

申请人： Kenkichi Tanioka ,  Keiichi Shidara ,  Takao Kuriyama ,  Yukio Takasaki ,  Tadaaki Hirai ,  Yasuhiko Nonaka ,  Eisuke Inoue

发明人： Kenkichi Tanioka ,  Keiichi Shidara ,  Takao Kuriyama ,  Yukio Takasaki ,  Tadaaki Hirai ,  Yasuhiko Nonaka ,  Eisuke Inoue

IPC分类号： H01J31/26 ,  H01J1/78 ,  H01J29/45 ,  H01L31/0248 ,  H01L31/08 ,  G03G5/08 ,  G03G5/09

CPC分类号： H01J29/456

摘要： A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.

摘要翻译： 公开了与光电导型的图像拾取管的靶相关的光电导膜的结构。 该感光膜主要由Se形成，Te的中心部分添加Te。 此外，被认为形成通过在Se中捕获电子而形成负空间电荷的Se和GaF 3等中的电子形成深阱陷阱的As被添加在与Te存在的区域相邻的区域中。 此外，存在GaF 3等的区域中的膜的厚度比迄今采用的值更薄（不小于20，不大于90）。

公开(公告)号：US4884011A

公开(公告)日：1989-11-28

申请号：US143384

申请日：1988-01-13

申请人： Tatsuo Makishima ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Sachio Ishioka ,  Takashi Yamashita ,  Keiichi Shidara ,  Junichi Yamazaki ,  Masaaki Aiba

发明人： Tatsuo Makishima ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Sachio Ishioka ,  Takashi Yamashita ,  Keiichi Shidara ,  Junichi Yamazaki ,  Masaaki Aiba

IPC分类号： H01J31/38 ,  H01J29/45 ,  H01L31/0272 ,  H04N5/228

CPC分类号： H01L31/0272 ,  H01J29/456

摘要： A light-detecting device for converting a light to an electrical signal utilizes a charge multiplication function and has a stable gain.The light-detecting device comprises a photo-electric conversion unit for converting a measurement light to an electrical signal, a power supply for applying an electric field to the photo-electric conversion unit, a light source for applying an incident light to the photo-electric conversion unit, signal detection means for detecting the charge converted by the photo-electric conversion unit based on the incident light from the light source, and signal hold means for holding the output signal of the signal detection means at a predetermined level.

摘要翻译： 用于将光转换为电信号的光检测装置利用电荷倍增函数并具有稳定的增益。 光检测装置包括用于将测量光转换为电信号的光电转换单元，向光电转换单元施加电场的电源，用于将入射光施加到光电转换单元的光源， 电转换单元，用于基于来自光源的入射光检测由光电转换单元转换的电荷的信号检测装置，以及用于将信号检测装置的输出信号保持在预定水平的信号保持装置。

公开(公告)号：US4860093A

公开(公告)日：1989-08-22

申请号：US143655

申请日：1988-01-13

申请人： Takashi Yamashita ,  Keiichi Shidara ,  Masaaki Aiba ,  Yukio Takasaki ,  Tadaaki Hirai

发明人： Takashi Yamashita ,  Keiichi Shidara ,  Masaaki Aiba ,  Yukio Takasaki ,  Tadaaki Hirai

IPC分类号： H04N5/228 ,  H04N9/09

CPC分类号： H04N5/228 ,  H04N9/09

摘要： The present invention relates to a method and an apparatus for driving image pick-up tubes in, particular, a color television camera or the like having more than one image pick-up tube and in particular to a method and an apparatus for driving image pick-up tubes in which the potentials of the cathode electrodes of the respective image pick-up tubes are set to the same common potential, the potential of the target electrode of at least one of the image pick-up tubes is set substantially to earth potential, target drive potentials are individually applied to the target electrodes of the other image pick-up tubes, and the target potential of each image pick-up tube is set to a value near the earth potential, so that a high S/N ratio is obtained. The driving appartatus can be miniaturized and easily driven. According to the invention, a capacitor, such as a chip capcitor or the like, with a low withstanding voltage can be used in a first-stage amplifier to amplify the video signal from the target electrode. This first-stage amplifier can be arranged near a signal output electrode of the target. Thus, the stray capacitance can be reduced.

摘要翻译： 本发明涉及一种用于驱动图像拾取管的方法和装置，特别是具有多于一个图像拾取管的彩色电视摄像机等，特别涉及一种用于驱动图像拾取的方法和装置 将各个图像拾取管的阴极的电位设定为相同的公共电位的至少一个摄像管的目标电极的电位基本上设定为接地电位的管 将目标驱动电位分别施加到其他摄像管的目标电极，并且将每个摄像管的目标电位设置为接近地电位的值，使得高S / N比为 获得。 驾驶舱可以小型化，易于驾驶。 根据本发明，可以在第一级放大器中使用诸如芯片电容器等具有低耐压的电容器来放大来自目标电极的视频信号。 该第一级放大器可以布置在目标的信号输出电极附近。 因此，可以减小杂散电容。

公开(公告)号：US4307319A

公开(公告)日：1981-12-22

申请号：US921948

申请日：1978-07-05

申请人： Motoyasu Terao ,  Tadaaki Hirai ,  Eiichi Maruyama ,  Hideaki Yamamoto ,  Tsutomu Fujita ,  Naohiro Goto ,  Keiichi Shidara

发明人： Motoyasu Terao ,  Tadaaki Hirai ,  Eiichi Maruyama ,  Hideaki Yamamoto ,  Tsutomu Fujita ,  Naohiro Goto ,  Keiichi Shidara

IPC分类号： H01J29/45 ,  H01L31/08

CPC分类号： H01J29/451

摘要： A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.

摘要翻译： 光电装置包括信号电极，含有50原子％以上的硒的非晶质感光体层和由选自氧耗尽型氧化铈和氧耗尽型氧化铅的材料制成的N型半导体层，以及 其间具有大于8nm的厚度并且包括500nm的厚度以及从导带的底部位于0.2至0.8eV的能量范围内的费米能级。

公开(公告)号：US4040985A

公开(公告)日：1977-08-09

申请号：US674086

申请日：1976-04-06

申请人： Keiichi Shidara ,  Naohiro Goto ,  Eiichi Maruyama ,  Tadaaki Hirai ,  Tsutomu Fujita

发明人： Keiichi Shidara ,  Naohiro Goto ,  Eiichi Maruyama ,  Tadaaki Hirai ,  Tsutomu Fujita

IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01L31/00

CPC分类号： H01J29/456 ,  Y10T428/31678

摘要： A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.

摘要翻译： 光电导膜包括含有Se的第一区域，其中Te和能够形成Se的深度水平的元素分别平均加入低于10原子％的平均值，第二区域设置在第一区域上并包含Se，其中 加入具有峰值大于15原子％的浓度的连续分布的浓度，第三区域设置在第二区域上，并且包含Se，其中能够形成Se中的深层次的元素具有连续的浓度分布 具有大于15原子％的峰值的第一区域，以及设置在第三区域上并且含有Se的Se的第四区域，其中Te和Se中能够形成深度水平的元素分别以低于10原子％ 。

公开(公告)号：US4007473A

公开(公告)日：1977-02-08

申请号：US580539

申请日：1975-05-23

申请人： Yasuhiko Nonaka ,  Tadaaki Hirai ,  Naohiro Goto ,  Keiichi Shidara

发明人： Yasuhiko Nonaka ,  Tadaaki Hirai ,  Naohiro Goto ,  Keiichi Shidara

IPC分类号： H01J9/233 ,  H01J29/45 ,  H01L31/08 ,  H01L27/14

CPC分类号： H01J29/456 ,  Y10S148/063 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S148/15

摘要： In a target structure for use in a photoconductive image pickup tube, a P-type photoconductive film is deposited on an N-type transparent conductive film which is deposited on a transparent substrate. The P-type photosensitive film comprises first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time from that of the second photoconductive substance thereby forming a film of the first photoconductive substance which is not contiguous to the junction surface between the N-type transparent conductive film and the P-type photoconductive film.

摘要翻译： 在用于光电导图像拾取管的目标结构中，P型光电导膜沉积在沉积在透明衬底上的N型透明导电膜上。 P型感光膜包含第一和第二光电导物质。 开始第一光电导物质的沉积比第二光电导物质的延迟预定时间，从而形成第一光电导物质的膜，其不与N型透明导电膜和P型结合面之间的接合面邻接 型感光膜。

公开(公告)号：US3984722A

公开(公告)日：1976-10-05

申请号：US469760

申请日：1974-05-14

申请人： Eiichi Maruyama ,  Hiroaki Hachino ,  Yasushi Saitoh ,  Tadaaki Hirai ,  Naohiro Goto ,  Yukinao Isozaki ,  Keiichi Shidara ,  Saiichi Koizumi

发明人： Eiichi Maruyama ,  Hiroaki Hachino ,  Yasushi Saitoh ,  Tadaaki Hirai ,  Naohiro Goto ,  Yukinao Isozaki ,  Keiichi Shidara ,  Saiichi Koizumi

IPC分类号： H01J29/45 ,  H01L31/08 ,  H01L31/109 ,  H01J31/38

CPC分类号： H01L31/109 ,  H01J29/456 ,  H01J9/233

摘要： An image pickup tube target wherein a rectifying contact which is formed at a boundary of a first layer of a material selected from the group consisting of tin oxide, indium oxide, titanium oxide, cadmium sulfide, zinc sulfide, cadmium selenide, zinc selenide, n-type germanium, n-type silicon and mixture thereof, and a second layer of a material mainly consisting of selenium and including halogen, is reversely biased and operated at a region where signal current is saturated with respect to applied voltage. The second layer of the material includes 50 atomic percent or more of selenium and 0.1 - 1000 atomic ppm of halogen. More preferably, the second layer comprises 3-20 atomic % of arsenic, 0.1-20 atomic ppm of iodine and balance mainly consisting of selenium.

摘要翻译： 一种图像拾取管目标，其中形成在选自氧化锡，氧化铟，氧化钛，硫化镉，硫化锌，硒化镉，硒化锌，氮化镍的材料的第一层的边界处的整流接触 型锗，n型硅及其混合物，以及主要由硒组成并包括卤素的材料的第二层反向偏置并在信号电流相对于施加电压饱和的区域操作。 材料的第二层包括50原子％或更多的硒和0.1-1000原子ppm的卤素。 更优选地，第二层包含3-20原子％的砷，0.1-20原子ppm的碘，余量主要由硒组成。