摘要:
A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.
摘要:
In a method of manufacturing a silicon carbide substrate, a defect-containing substrate made of silicon carbide is prepared. The defect-containing substrate has a front surface, a rear surface being opposite to the front surface, and a surface portion adjacent to the front surface. The detect-containing substrate includes a screw dislocation in the surface portion. The front surface of the defect-containing substrate is applied with an external force so that a crystallinity of the surface portion is reduced. After being applied with the external force, the defect-containing substrate is thermally treated so that the crystallinity of the surface portion is recovered.
摘要:
Disclosed is a media-agitation type pulverizer, which is enabled to acquire products of high quality by excellent pulverizing/dispersing actions. The media-agitation type pulverizer comprises a grinding container having a material entrance and a spherical grinding chamber, an agitating member disposed rotatably in the grinding chamber and near the inner wall of the grinding container, grinding media contained in the grinding chamber, and a centrifugal-type media-separating member rotatably disposed in the grinding chamber and in opposed relation to the agitating member.
摘要:
To solve an uneven light quantity caused in a case where a light guide plate, in which light from a spot light source such as an LED enters an surface, changes by 90 degrees and exits the light to the outside, is used as a backlight. The light guide plate of the invention includes a light flux unifying region. The light flux unifying region has an incident surface, a first surface, and an exit surface. Light fluxes emitted from a light source enter the incident surface. The first surface is almost perpendicular to the incident surface and the intensity distribution of the light fluxes having entered is unified at the first surface. The exit surface is disposed almost parallel with the incident surface and the unified light fluxes exit from the exit surface. A boundary line between the incident surface and the first surface has a zigzag surface.
摘要:
The object of the present invention is to provide a medium agitation mill which is responsive to the standstill of the mill for preventing the pulverizing medium from invading the inside space of the longitudinal hollow space of the drive shaft of the impeller.In the medium agitation mill the medium separating impeller is arranged in the inside space of the agitating member, and the impeller has a plurality of vanes circumferentially arranged at intervals, and is driven by the hollow drive shaft, one end of which opens to the inside of the impeller to provide the raw material discharging port. The discharging port is provided with an on-off valve of a resilient material to open and close the discharging port.
摘要:
An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film and the dielectric film are formed between the upper electrode and the lower electrode, at the end of the MIM capacitor. The second dielectric film is formed to have an opening at the top of the lower electrode. The dielectric film abuts the lower electrode via the opening. The upper electrode is formed on the dielectric film. The upper electrode and the dielectric film are formed in such a manner as to embrace the opening entirely, and the second dielectric film and the lower electrode are formed so that the respective widths are the same as, or greater than, the widths of the upper electrode and the dielectric film.
摘要:
A method for manufacturing a sintered compact having high density, and a sintered compact manufactured by the manufacturing method are provided. The manufacturing method comprises the steps of preparing hydroxyapatite powder, molding a green compact, shaping the green compact, and sintering the green compact. Further, a method for manufacturing a sintered compact having high light permeability, and a sintered compact manufactured by the manufacturing method are provided. The manufacturing method comprises the steps of preparing hydroxyapatite powder, molding a green compact, shaping the green compact, primary sintering, and secondary sintering. Furthermore, a cell culture base formed from the sintered compact described above is provided, by which affinity of various cells with bone can be properly determined. Moreover, a cell culture base by which affinity of various cells with bone can be properly determined is provided. The cell culture base is mainly composed of a calcium phosphate based compound, and is highly compacted.
摘要:
The object of the present invention is to provide a medium agitation mill which is responsive to the standstill of the mill for preventing the pulverizing medium from invading the inside space of the longitudinal hollow space of the drive shaft of the impeller.In the medium agitation mill the medium separating impeller is arranged in the inside space of the agitating member, and the impeller has a plurality of vanes circumferentially arranged at intervals, and is driven by the hollow drive shaft, one end of which opens to the inside of the impeller to provide the raw material discharging port. The discharging port is provided with an on-off valve of a resilient material to open and close the discharging port.
摘要:
An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film and the dielectric film are formed between the upper electrode and the lower electrode, at the end of the MIM capacitor. The second dielectric film is formed to have an opening at the top of the lower electrode. The dielectric film abuts the lower electrode via the opening. The upper electrode is formed on the dielectric film. The upper electrode and the dielectric film are formed in such a manner as to embrace the opening entirely, and the second dielectric film and the lower electrode are formed so that the respective widths are the same as, or greater than, the widths of the upper electrode and the dielectric film.
摘要:
A crushing apparatus for processing of materials in bulk includes a cylindrical separator disposed rotatably in a crushing vessel almost coaxially therewith, wherein the separator partition on interior space of the vessel into an inner and an outer chamber one inside the other about the axis of the vessel. The apparatus also includes a cylindrical agitation unit disposed rotatably in the inner chamber and almost coaxial with the vessel. The separator comprises inner and outer annular rings and a plurality of steel studs in a mutually adjacent arrangement and extending between the inner and outer rings space, thereby defining a plurality of slits or openings therebetween for intercommunication of the inner and outer chambers. The agitation unit has a series of flutes and crowns in alternating orders on the peripheral wall thereof, and each of the flutes has a slit or through-bore intercommunicating the interior and the exterior of the unit. The vessel has an input port for feeding the material in communication with the inner chamber and an output port for discharging the crushed materials out of the outer chamber.