公开(公告)号：US20070132338A1

公开(公告)日：2007-06-14

申请号：US11674816

申请日：2007-02-14

申请人： Takeshi Nakao ,  Masakazu Mimura ,  Michio Kadota

发明人： Takeshi Nakao ,  Masakazu Mimura ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02559

摘要： In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of about 1% to about 3% of the wavelength of an excited surface acoustic wave.

摘要翻译： 在表面声波装置中，构成至少一个IDT的电极膜设置在压电基板上，并且在压电基板上设置SiO 2膜以覆盖电极膜。 电极膜的膜厚度在激发的表面声波的波长的约1％至约3％的范围内。

公开(公告)号：US07212080B2

公开(公告)日：2007-05-01

申请号：US11531003

申请日：2006-09-12

申请人： Masakazu Mimura ,  Tomohisa Komura ,  Norio Taniguchi ,  Takeshi Nakao ,  Michio Kadota

发明人： Masakazu Mimura ,  Tomohisa Komura ,  Norio Taniguchi ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H9/02559 ,  H03H9/6433 ,  H03H9/6466 ,  H03H9/725

摘要： A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.

摘要翻译： 表面声波分波器包括第一滤波器和第二滤波器，每个滤波器包括以梯形电路配置布置的多个表面声波谐振器。 在第一压电基板上设置有通带的频率范围相对较低的第一滤波器，在第二压电基板上设置通带频率相对较高的第二滤波器。 第一压电基板和第二压电基板是旋转Y切X传播LiTaO 3 3衬底，第一压电基片的切割角大于第二压电基片的切割角。

公开(公告)号：US07109634B2

公开(公告)日：2006-09-19

申请号：US10734228

申请日：2003-12-15

申请人： Takeshi Nakao ,  Kenji Nishiyama ,  Tetsuya Kimura ,  Michio Kadota

发明人： Takeshi Nakao ,  Kenji Nishiyama ,  Tetsuya Kimura ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H9/02677

摘要： A surface acoustic wave device with improved reflection characteristics, in which an insulating film is formed so as to cover an electrode film, and the electrode film is made from Al or an Al alloy, includes a piezoelectric substrate, an electrode film which is formed of Al or an alloy including Al as a major component on the piezoelectric substrate and which defines at least one interdigital transducer, and an insulating film arranged on the piezoelectric substrate so as to cover the electrode film, the average density of the electrode film is less than or equal to about 1.5 times the density of the insulating film, wherein the top surface of the insulating film is planarized.

摘要翻译： 具有改善的反射特性的表面声波器件，其中形成绝缘膜以覆盖电极膜，并且所述电极膜由Al或Al合金制成，包括压电基片，电极膜，由 Al或包含Al作为主要成分的合金，并且限定至少一个叉指换能器，以及布置在压电基板上以覆盖电极膜的绝缘膜，电极膜的平均密度小于 或等于绝缘膜密度的约1.5倍，其中绝缘膜的顶表面被平坦化。

公开(公告)号：US06617752B2

公开(公告)日：2003-09-09

申请号：US09964831

申请日：2001-09-27

申请人： Takeshi Nakao ,  Koji Fujimoto ,  Michio Kadota ,  Toshimaro Yoneda

发明人： Takeshi Nakao ,  Koji Fujimoto ,  Michio Kadota ,  Toshimaro Yoneda

IPC分类号： H03H925

CPC分类号： H03H9/6483 ,  H03H3/08 ,  H03H9/25 ,  H03H9/6436 ,  H03H9/6459 ,  Y10T29/42 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/49128

摘要： In a surface acoustic wave device using a Shear Horizontal type surface acoustic wave, at least one interdigital transducer (IDT) is made of a material having a larger mass-load effect than that of aluminum. The metallization ratio of the IDT and the normalization film thickness h/&lgr; of the IDT are controlled such that ripple caused by a transversal mode wave is about 0.5 dB or less, where “h” indicates the film thickness of the electrodes and “&lgr;” indicates the wavelength of a surface acoustic wave.

公开(公告)号：US07730596B2

公开(公告)日：2010-06-08

申请号：US11329460

申请日：2006-01-11

申请人： Michio Kadota ,  Takeshi Nakao ,  Masakazu Mimura

发明人： Michio Kadota ,  Takeshi Nakao ,  Masakazu Mimura

IPC分类号： H01L41/22 ,  H01L41/00

CPC分类号： H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49156

摘要： A method of manufacturing a surface acoustic wave device having a high electromechanical coefficient and reflection coefficient, and also having an improved frequency-temperature characteristic is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.

摘要翻译： 通过在IDT上形成SiO 2膜来制造具有高机电系数和反射系数以及具有改善的频率 - 温度特性的表面声波器件的方法，以便防止在SiO2的表面上发生裂纹 膜，从而可以可靠地获得所需的性能。 表面声波装置包括至少一个IDT，其由具有高于Al的密度的金属或合金构成并形成在25°至55°的旋转Y板X传播LiTaO 3衬底上的SiO 2和SiO 2 薄膜，其设置在LiTaO 3基板上，以便覆盖至少一个IDT以提高频率 - 温度特性。

公开(公告)号：US07701114B2

公开(公告)日：2010-04-20

申请号：US12326235

申请日：2008-12-02

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and θ of the Euler angles (0°±5, θ+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52≦D≦0.6, −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729   Inequality (1A) (2) When D>0.6, 86.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7λC+45.729  Inequality (1B) where D is a duty, and C is a thickness of the IDT.

摘要翻译： 表面声波器件的占空比大于约0.5，通带外的衰减增加，并且有效地抑制了不期望的寄生响应。 表面声波装置包括具有欧拉角（0°±5°，±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极，其包括主要由 Cu，第一氧化硅膜，其设置在除了电极布置的区域之外的区域中以具有与电极的厚度基本相等的厚度;以及第二氧化硅膜，其布置成覆盖 所述电极和所述第一氧化硅膜，其中所述表面声波器件利用SH波，其中所述IDT电极3的占空比D为至少约0.52， 的欧拉角（0°±5，θ= 5°，0°±10°）被设定为在满足以下不等式（1A）或（1B）的范围内：（1）当0.52＆ ; D，D，N，E，D，D，D，N，E，D，N，E， ，86.5-100×C＆nlE;＆Thetas;＆nlE; 37.5×D2-57.75×D + 104.075 + 5710×C2-1105.7λC+ 45.729不等式（1B）其中D为任务，C为IDT的厚度。

公开(公告)号：US20090009028A1

公开(公告)日：2009-01-08

申请号：US12234836

申请日：2008-09-22

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/64

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, 0±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062λ to about 0.14λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, 0±5°, 0°±10°) is in the range satisfying the following Formula (1): θ=31.72−206.92×exp (−1×TAu/0.0138)   Formula (1) where TAu is a value of Au electrode film thickness normalized with the wavelength λ.

摘要翻译： 利用瑞利波的表面声波装置包括具有欧拉角（0°±5°，0±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极，其包括IDT 主要包括Au的电极，设置在除了上述电极的区域以外的区域中的第一氧化硅膜，第一氧化硅膜的膜厚度基本上等于上述电极的厚度，以及 布置成覆盖电极和第一氧化硅膜的第二氧化硅膜，其中电极的膜厚度在约0.062λ至约0.14λ的范围内，其中λ表示声表面波的波长，θ表示 （0°±5°，0±5°，0°±10°）的上述欧拉角在满足下式（1）的范围内：<？在线公式描述=“In- 行公式“end =”lead“？> theta = 31.72-206.92xexp（-1xTAu / 0.0138） 式（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中TAu是用波长λ标准化的Au电极膜厚度的值。

公开(公告)号：US07345400B2

公开(公告)日：2008-03-18

申请号：US11674816

申请日：2007-02-14

申请人： Takeshi Nakao ,  Masakazu Mimura ,  Michio Kadota

发明人： Takeshi Nakao ,  Masakazu Mimura ,  Michio Kadota

IPC分类号： H03H9/64 ,  H03H3/10 ,  H03H9/25

CPC分类号： H03H9/02559

摘要： In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of about 1% to about 3% of the wavelength of an excited surface acoustic wave.

摘要翻译： 在表面声波装置中，构成至少一个IDT的电极膜设置在压电基板上，并且在压电基板上设置SiO 2膜以覆盖电极膜。 电极膜的膜厚度在激发的表面声波的波长的约1％至约3％的范围内。

公开(公告)号：US07339304B2

公开(公告)日：2008-03-04

申请号：US10595237

申请日：2004-08-06

申请人： Michio Kadota ,  Takeshi Nakao ,  Takuo Hada

发明人： Michio Kadota ,  Takeshi Nakao ,  Takuo Hada

IPC分类号： H01L41/08

CPC分类号： H03H9/02559 ,  H03H3/08

摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.

摘要翻译： 表面声波装置包括由LiNbO 3 3制成的压电基片，其具有至少约0.025的方形的机电耦合系数k，至少一个由密度高于其的金属制成的电极。 的Al或主要包含金属的合金，或由密度大于Al的金属或主要包含金属的合金的金属和其它金属构成的层压膜构成，所述电极设置在压电基板上，第一 绝缘层，其设置在除设置所述至少一个电极的区域以外的区域中，所述第一绝缘层的厚度与所述电极的厚度基本相等;以及覆盖所述电极和所述第一绝缘层的第二绝缘层。 密度

公开(公告)号：US07230365B2

公开(公告)日：2007-06-12

申请号：US10448061

申请日：2003-05-30

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

摘要翻译： 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。