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公开(公告)号:US20240063168A1
公开(公告)日:2024-02-22
申请号:US17889170
申请日:2022-08-16
Applicant: Micron Technology, Inc.
Inventor: See Hiong Leow , Hong Wan NG , Seng Kim Ye , Kelvin Aik Boo Tan , Ling Pan
IPC: H01L23/00 , H01L27/105
CPC classification number: H01L24/48 , H01L27/1052 , H01L2224/48105
Abstract: Methods, systems, and devices for wire bonding for stacked memory dies are described. A memory system may include a stack of memory dies. As the stack grows to include more and more memory dies, the length of the wires coupling the memory dies with the control circuit may increase. Bonding multiple wires using an adhesive may increase a gap between neighboring wires coupled with the same memory die or different memory dies. For example, bonding one wire to a neighboring wire may pull one or both of the bonded wires away from their original placement, increasing a gap between the bonded wires and one or more neighboring wires. Bonding the wires coupled with a lower memory die may increase a gap such that sagging wires coupled with an upper memory die may be positioned in the gap to avoid shorting with the lower wires.
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12.
公开(公告)号:US20230207488A1
公开(公告)日:2023-06-29
申请号:US17976409
申请日:2022-10-28
Applicant: Micron Technology, Inc.
Inventor: Faxing Che , Hong Wan Ng , Yeow Chon Ong , Wei Yu , Ling Pan , Lin Bu
IPC: H01L23/00 , H01L25/00 , H01L25/065 , H01L23/498
CPC classification number: H01L23/562 , H01L25/50 , H01L25/0652 , H01L23/49816 , H01L23/49838 , H01L2924/1438 , H01L2924/182 , H01L24/48 , H01L24/32 , H01L2224/48011 , H01L2224/48091 , H01L2224/48221 , H01L24/73 , H01L2224/73265 , H01L2224/73215 , H01L2224/48145 , H01L2224/32145 , H01L2224/32245
Abstract: A semiconductor package assembly includes a substrate, a die stack including at least a bottom die, an inert top spacer, and at least a first inert base spacer. The inert top and base spacers are exclusive of any circuits. A top surface of the inert top spacer is directly attached to a bottom surface of the bottom die in the die stack. A top surface of the first inert base spacer is directly attached to a bottom surface of the inert top spacer and a bottom surface of the first inert base spacer is directly attached to the substrate. The footprint of the inert base spacer is smaller than the footprint of the inert top spacer. In some embodiments, the footprint of the inert base spacer is positioned entirely within the footprint of the inert top spacer.
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13.
公开(公告)号:US20230061803A1
公开(公告)日:2023-03-02
申请号:US17460126
申请日:2021-08-27
Applicant: Micron Technology, Inc.
Inventor: Ling Pan , Sook Har Leong , Kelvin Tan Aik Boo
IPC: H01L23/373 , H01L25/065 , H01L21/50
Abstract: Semiconductor devices and associated systems and methods are disclosed herein. In some embodiments the semiconductor devices include a package substrate, a controller die carried by the package substrate and a spacer carried by the package substrate spaced apart from the controller die. A thermally conductive material can be carried by an upper surface of the controller die and establish a thermal path extending from the upper surface of the controller die to the package substrate. The thermal path can reach the package substrate at a position horizontally between the controller die and the spacer. The semiconductor device can also include one or more dies at least partially carried by the spacer and at least partially above the controller die and the thermally conductive material. Each of the one or more dies is thermally insulated from the thermally conductive material, for example by a thermal adhesive layer between the two.
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14.
公开(公告)号:US20240404995A1
公开(公告)日:2024-12-05
申请号:US18646688
申请日:2024-04-25
Applicant: Micron Technology, Inc.
Inventor: Chin Hui Chong , Hong Wan Ng , See Hiong Leow , Ling Pan , Seng Kim Ye , Kelvin Tan Aik Boo
IPC: H01L25/065 , H01L25/00 , H05K1/02 , H10B80/00
Abstract: An apparatus includes selectable a circuit placement mechanism configured to support two or more different circuit layouts. The circuit placement mechanism may include an overlap of electrical connections associated with the two or more circuit layouts and joined through an etch back selector. The etch back selector may enable the apparatus to function according to a selected one of the two or more different circuit layouts.
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15.
公开(公告)号:US20240234403A1
公开(公告)日:2024-07-11
申请号:US18545996
申请日:2023-12-19
Applicant: Micron Technology, Inc.
Inventor: Seng Kim Dalson Ye , Kelvin Tan Aik Boo , Hong Wan Ng , See Hiong Leow , Ling Pan
IPC: H01L25/18 , H01L21/48 , H01L23/498 , H01L25/00 , H10B80/00
CPC classification number: H01L25/18 , H01L21/4853 , H01L23/49811 , H01L23/49822 , H01L23/49833 , H01L25/50 , H10B80/00 , H01L24/48
Abstract: A microelectronic device package includes a microelectronic device coupled to a substrate. The microelectronic device package further includes a stack of semiconductor dies positioned over the microelectronic device. The microelectronic device package also includes an interposer positioned between the microelectronic device and the stack of semiconductor dies. The interposer includes a conductive structure electrically connecting the microelectronic device and a ground circuit of the substrate. The interposer further includes an insulative structure positioned between the conductive structure and the stack of semiconductor dies.
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公开(公告)号:US20240194547A1
公开(公告)日:2024-06-13
申请号:US18517980
申请日:2023-11-22
Applicant: Micron Technology, Inc.
Inventor: Ling Pan , Seng Kim Ye , Hong Wan Ng , Kelvin Aik Boo Tan , See Hiong Leow
CPC classification number: H01L23/13 , H01L21/4857 , H01L23/49822 , H01L23/49827 , H01L23/49894 , H01L24/48 , H01L25/18 , H10B80/00 , H01L24/16 , H01L24/32 , H01L24/33 , H01L24/73 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265
Abstract: A variety of applications can include systems having packaged electronic devices. One or more of the packaged electronic devices can include a package substrate, having a first section and a second section with the second section elevated with respect to the first section, to support dies in the two sections. The first section can have a first top surface and a bottom surface with one or more layers of material between the first top surface and the bottom surface. The second section can include a second top surface and the bottom surface of the first section with the one or more layers of material of the first section extending horizontally from the first section. The second section can have one or more additional layers of material between the second top surface and the one or more layers of material of the first section extending horizontally from the first section.
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公开(公告)号:US20240071881A1
公开(公告)日:2024-02-29
申请号:US17894063
申请日:2022-08-23
Applicant: Micron Technology, Inc.
Inventor: Ling Pan , Wei Yu , Kelvin Tan Aik Boo
IPC: H01L23/498 , H01L21/48 , H01L23/00
CPC classification number: H01L23/49822 , H01L21/4857 , H01L24/14 , H01L24/16 , H01L2224/1403 , H01L2224/16227
Abstract: A semiconductor device assembly includes a semiconductor die and a substrate coupled to the semiconductor die. The substrate includes a primary conductive layer including a first surface of the substrate and a first solder mask layer coupled to the first surface. The substrate also includes a secondary conductive layer including a second surface of the substrate and a second solder mask layer coupled to the second surface. The substrate further includes an inner conductive layer positioned between the primary layer and the secondary layer, where the inner layer includes a bond pad positioned at the end of an opening that extends from the second solder mask layer through the secondary layer to the bond pad of the inner layer. By attaching a solder ball to the bond pad of the inner layer, standoff height is reduced.
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18.
公开(公告)号:US11688662B2
公开(公告)日:2023-06-27
申请号:US17460126
申请日:2021-08-27
Applicant: Micron Technology, Inc.
Inventor: Ling Pan , Sook Har Leong , Kelvin Tan Aik Boo
IPC: H01L25/00 , H01L23/31 , H01L23/373 , H01L21/50 , H01L25/065
CPC classification number: H01L23/373 , H01L21/50 , H01L25/0657
Abstract: Semiconductor devices and associated systems and methods are disclosed herein. In some embodiments the semiconductor devices include a package substrate, a controller die carried by the package substrate and a spacer carried by the package substrate spaced apart from the controller die. A thermally conductive material can be carried by an upper surface of the controller die and establish a thermal path extending from the upper surface of the controller die to the package substrate. The thermal path can reach the package substrate at a position horizontally between the controller die and the spacer. The semiconductor device can also include one or more dies at least partially carried by the spacer and at least partially above the controller die and the thermally conductive material. Each of the one or more dies is thermally insulated from the thermally conductive material, for example by a thermal adhesive layer between the two.
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