公开(公告)号：US20210126193A1

公开(公告)日：2021-04-29

申请号：US16665679

申请日：2019-10-28

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Robert K. Grubbs ,  Farrell M. Good ,  Adam W. Saxler ,  Andrea Gotti

IPC: H01L45/00

Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and a metal oxide material adjacent to the stacks of materials. The materials of the stacks comprise one or more chalcogenide materials. The metal oxide material comprises aluminum oxide, aluminum silicate, hafnium oxide, hafnium silicate, zirconium oxide, zirconium silicate, or a combination thereof and the metal oxide material extends continuously from an upper portion of the one or more stacks of materials to a lower portion of the one or more stacks of materials. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

公开(公告)号：US12040182B2

公开(公告)日：2024-07-16

申请号：US17971376

申请日：2022-10-21

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

IPC: H01L21/02 ,  H01L21/3105 ,  H10B63/00

CPC classification number: H01L21/02282 ,  H01L21/02129 ,  H01L21/0234 ,  H01L21/31053 ,  H10B63/84

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

公开(公告)号：US20230307367A1

公开(公告)日：2023-09-28

申请号：US18143027

申请日：2023-05-03

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar

IPC: H01L23/532 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L23/53276 ,  H01L23/5329 ,  H01L23/53261 ,  H01L29/1606 ,  H01L29/66015

Abstract: Some embodiments include an integrated assembly having a first graphene-containing-material offset from a second graphene-containing-material. The first graphene-containing-material includes a first graphene-layer-stack with first metal interspersed therein. The second graphene-containing-material includes a second graphene-layer-stack with second metal interspersed therein. A conductive interconnect couples the first and second graphene-containing materials to one another.

公开(公告)号：US11600707B2

公开(公告)日：2023-03-07

申请号：US15930090

申请日：2020-05-12

Applicant: Micron Technology, Inc.

Inventor： Ahmed Nayaz Noemaun ,  Stephen W. Russell ,  Tao D. Nguyen ,  Santanu Sarkar

IPC: H01L29/40 ,  H01L29/66 ,  H01L21/82

Abstract: Some embodiments include an integrated assembly having a pair of substantially parallel features spaced from one another by an intervening space. A conductive pipe is between the features and substantially parallel to the features. The conductive pipe may be formed within a tube. The tube may be generated by depositing insulative material between the features in a manner which pinches off a top region of the insulative material to leave the tube as a void region under the pinched-off top region.

公开(公告)号：US20220262628A1

公开(公告)日：2022-08-18

申请号：US17661966

申请日：2022-05-04

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Farrell M. Good

IPC: H01L21/02 ,  C23C16/452 ,  C23C16/04 ,  C01B32/00 ,  C01B33/00

Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

公开(公告)号：US12027363B2

公开(公告)日：2024-07-02

申请号：US17661966

申请日：2022-05-04

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Farrell M. Good

IPC: H01L21/02 ,  C01B32/00 ,  C01B33/00 ,  C23C16/04 ,  C23C16/452

CPC classification number: H01L21/02167 ,  C01B32/00 ,  C01B33/00 ,  C23C16/045 ,  C23C16/452 ,  H01L21/02274 ,  H01L21/02381 ,  H01L2221/1047

Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

公开(公告)号：US20230044518A1

公开(公告)日：2023-02-09

申请号：US17971376

申请日：2022-10-21

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

IPC: H01L21/02 ,  H01L21/3105

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

公开(公告)号：US20230015046A1

公开(公告)日：2023-01-19

申请号：US17375345

申请日：2021-07-14

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar

IPC: H01L23/532

Abstract: Some embodiments include an integrated assembly having a first graphene-containing-material offset from a second graphene-containing-material. The first graphene-containing-material includes a first graphene-layer-stack with first metal interspersed therein. The second graphene-containing-material includes a second graphene-layer-stack with second metal interspersed therein. A conductive interconnect couples the first and second graphene-containing materials to one another.

公开(公告)号：US11508573B2

公开(公告)日：2022-11-22

申请号：US15930875

申请日：2020-05-13

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

IPC: H01L21/02 ,  H01L21/3105 ,  H01L27/24

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

公开(公告)号：US11424118B2

公开(公告)日：2022-08-23

申请号：US16751049

申请日：2020-01-23

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Farrell M. Good

IPC: H01L21/02 ,  C23C16/452 ,  C23C16/04 ,  C01B32/00 ,  C01B33/00

Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.