中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

84 records (took 0.033 seconds)

    Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
    11.
    发明授权
    Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems 有权
    磁存储单元，制造方法，半导体器件，存储器系统和电子系统

    公开(公告)号：US09461242B2

    公开(公告)日：2016-10-04

    申请号：US14026627

    申请日：2013-09-13

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Witold Kula

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region, reducing an oxygen concentration and an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

    Abstract translation: 磁性电池包括中间氧化物区域（例如，隧道势垒）和次级氧化物区域之间的自由区域。 两个氧化物区域可以被配置为与自由区域引起磁各向异性（“MA”），从而提高自由区域的MA强度。 接近次氧化物区域的吸气剂材料被配制和配置成从次氧化物区域去除氧气，降低氧化物浓度和次级氧化物区域的电阻。 因此，次级氧化物区域对电池芯的电阻仅有最小的贡献。 因此，本公开的实施例使得能够实现高有效磁阻，低电阻面积乘积和低编程电压以及增强的MA强度。 还公开了制造方法，存储器阵列，存储器系统和电子系统。

    Spin transfer torque memory cells
    12.
    发明授权
    Spin transfer torque memory cells 有权
    旋转转矩记忆单元

    公开(公告)号：US09331269B2

    公开(公告)日：2016-05-03

    申请号：US14448343

    申请日：2014-07-31

    Applicant: Micron Technology, Inc.

    Inventor： Manzar Siddik ,  Witold Kula

    IPC: H01L29/82 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: Spin transfer torque memory cells and methods of forming the same are described herein. As an example, spin transfer torque memory cells may include an amorphous material, a storage material formed on the amorphous material, wherein the storage material is substantially boron free, an interfacial perpendicular magnetic anisotropy material formed on the storage material, a reference material formed on the interfacial perpendicular magnetic anisotropy material, wherein the reference material is substantially boron free, a buffer material formed on the reference material and a pinning material formed on the buffer material.

    Abstract translation: 旋转传递扭矩存储单元及其形成方法在此描述。 作为示例，自旋转移力矩存储单元可以包括无定形材料，形成在非晶材料上的储存材料，其中储存材料基本上不含硼，形成在存储材料上的界面垂直磁各向异性材料， 界面垂直磁各向异性材料，其中参考材料基本上不含硼，形成在参考材料上的缓冲材料和形成在缓冲材料上的钉扎材料。

    MEMORY CELLS, METHODS OF FABRICATION, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND ELECTRONIC SYSTEMS
    13.
    发明申请
    MEMORY CELLS, METHODS OF FABRICATION, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND ELECTRONIC SYSTEMS 有权
    存储器单元，制造方法，半导体器件结构，存储器系统和电子系统

    公开(公告)号：US20150028439A1

    公开(公告)日：2015-01-29

    申请号：US13948839

    申请日：2013-07-23

    Applicant: Micron Technology, Inc.

    Inventor： Witold Kula ,  Wayne I. Kinney ,  Gurtej S. Sandhu

    IPC: H01L43/02 ,  H01L43/12

    CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

    Abstract translation: 磁性电池芯包括具有多个磁性区域的种子区域和其上的多个非磁性区域。 种子区域提供了能够形成具有能够形成具有期望的晶体结构的上覆自由区域的微结构的上覆非磁性区域的模板。 自由区域设置在两个非磁性区域之间，这两个非磁性区域都可以被配置成诱导表面/界面磁各向异性。 因此，该结构被配置为具有高的磁各向异性强度，高能势垒，高隧道磁阻，低编程电流，低电池到电池的电阻变化，以及磁特性中的低电池到电池的变化。 还公开了制造方法，存储器阵列，存储器系统和电子系统。

    Semiconductor devices with magnetic regions and stressor structures
    17.
    发明授权
    Semiconductor devices with magnetic regions and stressor structures 有权

    公开(公告)号：US10510947B2

    公开(公告)日：2019-12-17

    申请号：US16143129

    申请日：2018-09-26

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Witold Kula

    IPC: H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

    Abstract: A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.

    ELECTRONIC SYSTEMS AND PROCESSOR-BASED SYSTEMS
    18.
    发明申请
    ELECTRONIC SYSTEMS AND PROCESSOR-BASED SYSTEMS 审中-公开

    公开(公告)号：US20190252602A1

    公开(公告)日：2019-08-15

    申请号：US16394946

    申请日：2019-04-25

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Witold Kula

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02

    CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region, reducing an oxygen concentration and an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

    Magnetic tunnel junctions
    19.
    发明授权
    Magnetic tunnel junctions 有权

    公开(公告)号：US10374149B2

    公开(公告)日：2019-08-06

    申请号：US16006588

    申请日：2018-06-12

    Applicant: Micron Technology, Inc.

    Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22

    Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

    Magnetic memory cells and semiconductor devices
    20.
    发明授权
    Magnetic memory cells and semiconductor devices 有权

    公开(公告)号：US10290799B2

    公开(公告)日：2019-05-14

    申请号：US16000272

    申请日：2018-06-05

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Witold Kula

    IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

    Abstract: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region, reducing an oxygen concentration and an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

Patent Agency Ranking