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公开(公告)号：US20240388254A1
公开(公告)日：2024-11-21
申请号：US18638806
申请日：2024-04-18
Applicant: NXP B.V.
Inventor： Xin Yang , Stephane David , Mark Pieter van der Heijden , Dominicus MARTINUS WILHELMUS Leenaerts
Abstract: A bias circuit includes a first transistor and a second transistor configured as a first current mirror. A first current source is arranged between a supply node and the first transistor first terminal. A bias circuit output is coupled to the second transistor second terminal. A second current mirror is coupled to the first current mirror and the bias circuit output. A second current source is arranged between the supply node and the second current mirror. A third transistor in a diode-connected configuration is coupled between the first transistor second terminal and a ground. Alternatively or in addition, the bias circuit includes a first variable capacitor coupled between the second transistor first terminal and the second transistor second terminal. A fourth transistor has a control terminal coupled to the supply node, a first terminal coupled to the supply node and a second terminal coupled to the second transistor first terminal.
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公开(公告)号：US11784385B2
公开(公告)日：2023-10-10
申请号：US17358072
申请日：2021-06-25
Applicant: NXP B.V.
Inventor： Xin Yang , Mark Pieter van der Heijden
Abstract: A Wilkinson power combiner (202) is described that includes: at least one input port (210) coupled to at least one output port (212, 214, 216, 218) by at least two power combining stages. A first power combining stage (204) of the at least two power combining stages is configured as a single-stage first frequency pass circuit and a second power combining stage (206) of the at least two stages is configured as a single-stage second frequency pass circuit, and wherein the first frequency is different to the second frequency.
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公开(公告)号：US20230170871A1
公开(公告)日：2023-06-01
申请号：US18051596
申请日：2022-11-01
Applicant: NXP B.V.
Inventor： Xin Yang , Dominicus MARTINUS WILHELMUS Leenaerts , Rana Azhar Shaheen
CPC classification number: H03H7/255 , H03F3/19 , H03F2200/451
Abstract: An attenuation circuit comprising: a connection-node for connecting to an RF connection; an isolation-capacitor connected in series between the connection-node and an internal-node; a first-bias-resistor connected in series between a first-control-node and the internal-node; a second-bias-resistor connected in series between the internal-node and a second-control-node; a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node; a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node; a first-decoupling-capacitor connected in series between the first-control-node and the reference-node; and a second-decoupling-capacitor connected in series between the second-control-node and the reference-node.
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公开(公告)号：US11539333B2
公开(公告)日：2022-12-27
申请号：US16514227
申请日：2019-07-17
Applicant: NXP B.V.
Inventor： Xin Yang , Dominicus Martinus Wilhelmus Leenaerts
Abstract: An RF transceiver front end includes a receiver limb including a length of transmission line, an impedance matching network, a downstream shunt switch and a downstream further receiver component and a transmitter limb. The impedance matching network is configured to transform the input impedance of the further receiver component to match the input impedance of the receiver limb when the shunt switch is open and the RF transceiver front end is operable in receiver mode. The impedance matching network is further configured to transform the input impedance of the shunt switch to present an open circuit as the input impedance of the receiver limb when the shunt switch is closed and the RF transceiver front end is operable in transmitter mode. The length of transmission line can be from zero to less than λ/4 at the operating frequency of the RF transceiver.
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公开(公告)号：US20240195367A1
公开(公告)日：2024-06-13
申请号：US18481259
申请日：2023-10-05
Applicant: NXP B.V.
Inventor： Xin Yang , Mark Pieter van der Heijden , Jasper Pijl , Zhe Chen
CPC classification number: H03F3/24 , H01P5/18 , H03F2200/451
Abstract: A Radio-Frequency (RF) circuit for an RF front-end includes a balanced amplifier with first and second amplifiers and an output directional coupler. First and second ports of the output directional coupler are coupled to outputs of the first and second amplifiers, a third port of the output directional coupler is coupled to an input-output terminal that is configured to be coupled to an antenna, and a fourth port of the output directional coupler is coupled to an input of a receiver amplifier. In a transmit mode, the output directional coupler may couple an RF signal to the input-output terminal. In a receive mode, the output directional coupler may couple a signal received from an antenna to the input of the receiver amplifier.
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Patent Agency Ranking
公开(公告)号：US20240098906A1
公开(公告)日：2024-03-21
申请号：US18459759
申请日：2023-09-01
Applicant: NXP B.V.
Inventor： Xin Yang , Mustafa Acar , Zhe Chen , Dominicus MARTINUS WILHELMUS Leenaerts
CPC classification number: H05K3/3405 , H05K1/0233 , H05K1/025 , H05K2201/10053
Abstract: A circuit comprising: a digital attenuator part comprising: a first and second attenuator terminal; a first inductor having a first terminal coupled to the first attenuator terminal and a second terminal coupled to the second attenuator terminal; a first switched arrangement comprising a first switch having a first switch-terminal and a second switch-terminal, wherein the first switch-terminal is coupled to the first terminal of the first inductor, and a first resistor and a first capacitor are arranged in parallel, coupled between the second switch-terminal and a reference voltage; and a second switched arrangement comprising a second switch having a first switch-terminal and a second switch-terminal, wherein the first switch-terminal is coupled to the second terminal of the first inductor, and wherein a second resistor and a second capacitor are arranged in parallel and coupled between the second switch-terminal and the reference voltage.
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公开(公告)号：US20220199617A1
公开(公告)日：2022-06-23
申请号：US17644138
申请日：2021-12-14
Applicant: NXP B.V.
Inventor： Jozef Reinerus Maria Bergervoet , Xin Yang , Mark Pieter van der Heijden , Lukas Frederik Tiemeijer , Alessandro Baiano
IPC: H01L27/088 , H01L23/528 , H01L21/8234
Abstract: A metal oxide semiconductor, MOS, device (405) is described that includes a gate terminal, at least one source terminal and at least one drain terminal, wherein at least one source terminal and at least one drain terminal are formed of metal and are connected to a number of respective contact vias. A plurality of local interconnect layers, LIL, (470) are connected respectively to the least one source terminal and at least one drain terminal through the number of respective contact vias, wherein the at least one source terminal and the at least one drain terminal respectively connected to the plurality of LIL (470) are configured such that: the at least one source terminal and the at least one drain terminal do not overlap in a first direction (602) and a second direction (604) that is orthogonal to the first direction (602); and the at least one source terminal and the at least one drain terminal do not overlap or only a proportion of the at least one source terminal and the at least one drain terminal overlap in a third direction (606), where the third direction (606) is orthogonal to both the first direction (602) and the second direction (604).
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18.发明授权公开(公告)号：US12106884B2
公开(公告)日：2024-10-01
申请号：US17651868
申请日：2022-02-21
Applicant: NXP B.V.
Inventor： Xin Yang , Mark Pieter van der Heijden
CPC classification number: H01F27/2804 , H01F41/041 , H03H7/00 , H01F2027/2809
Abstract: A radio frequency, RF, auto-transformer circuit (300, 700, 901) and method (1000) of constructing a RF auto-transformer are described. The RF, auto-transformer circuit (300, 700, 901) includes: an inner coil formed (1102) with a first metal layer (MT1) to create a first shunt inductor (302), wherein at least a portion of the inner coil is overlayed (1106) with a second metal layer (MT2) that creates a first series inductor (303) that exhibits inductive coupling to the first shunt inductor (302). An outer coil is formed (1104) with the first metal layer (MT1) that creates a second series inductor (304), where the outer coil is located adjacent the inner coil and provides inductive coupling between the second series inductor (304) and each of the first shunt inductor (302) and first series inductor (303). At least a portion of the outer coil is overlayed (1008) with the second metal layer (MT2) that creates a second shunt inductor (301) that exhibits inductive coupling between the second shunt inductor (301) and each of the first shunt inductor (302) and first series inductor (303) and second series inductor (304). The outer coil is connected (1112) to the inner coil using vias and the respective first metal layer (MT1) is connected to the second layer (MT2) using vias.
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公开(公告)号：US20220190459A1
公开(公告)日：2022-06-16
申请号：US17358080
申请日：2021-06-25
Applicant: NXP B.V.
Inventor： Xin Yang , Mark Pieter van der Heijden
Abstract: A Wilkinson power combiner (202) is described that includes a high-pass, HP, frequency circuit (500, 550), wherein the HP frequency circuit (500, 550) comprises at least one of: (i) one input port (510) coupled to at least two output ports (512, 514) via at least two paths; and an input shunt inductor (520) coupling the input port (510) to ground; wherein the one input port (510) is coupled to the at least two output ports (512, 514) via respective series capacitances (230, 238) on the at least two paths, which in cooperation with the input shunt inductor (520) forms a first HP frequency circuit; and (ii) at least one resistor (554, 528)-inductor (552, 524), R-L isolation circuit (500, 550) configured to couple the at least two output ports (512, 514) that forms a second HP frequency circuit.
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公开(公告)号：US10673388B2
公开(公告)日：2020-06-02
申请号：US16131682
申请日：2018-09-14
Applicant: NXP B.V.
Inventor： Mark Pieter Van Der Heijden , Gerben Willem De Jong , Xin Yang
Abstract: A bias circuit for a bipolar RF amplifier is described. The bias circuit includes a current source coupled to a bias network. The bias network supplies a base current to the transistors in the amplifier circuit of the bipolar RF amplifier. The bias circuit includes a buffer coupled to the bias network and to the bipolar RF amplifier. The buffer provides additional base current to the amplifier circuit of bipolar RF amplifier and sinks avalanche current generated by the amplifier circuit of the bipolar RF amplifier.
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