公开(公告)号：US07563716B2

公开(公告)日：2009-07-21

申请号：US11693383

申请日：2007-03-29

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21/302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。 在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US20070167015A1

公开(公告)日：2007-07-19

申请号：US11693383

申请日：2007-03-29

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21/302 ,  C03C15/00 ,  C23F1/00 ,  H01L21/461

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。 在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US20070029285A1

公开(公告)日：2007-02-08

申请号：US11581375

申请日：2006-10-17

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： C03C15/00 ,  H01L21/461 ,  H01L21/302 ,  B44C1/22

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

公开(公告)号：US07132367B2

公开(公告)日：2006-11-07

申请号：US10441063

申请日：2003-05-20

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21/302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。在绝缘膜上形成的金属膜 包括用包含氧化剂的抛光溶液和使氧化物水溶性但不含抛光磨料的物质抛光的凹槽。

公开(公告)号：US06596638B1

公开(公告)日：2003-07-22

申请号：US09618999

申请日：2000-07-18

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。 在具有凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物水溶性但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US07279425B2

公开(公告)日：2007-10-09

申请号：US11581375

申请日：2006-10-17

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21/302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。 在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US20050074967A1

公开(公告)日：2005-04-07

申请号：US10441063

申请日：2003-05-20

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： B24B37/00 ,  B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/304 ,  H01L21/321 ,  H01L21/4763

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。在绝缘膜上形成的金属膜 包括用包含氧化剂的抛光溶液和使氧化物水溶性但不含抛光磨料的物质抛光的凹槽。

公开(公告)号：US06117775A

公开(公告)日：2000-09-12

申请号：US182438

申请日：1998-10-30

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： B24B37/00 ,  B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/304 ,  H01L21/321 ,  H01L21/302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

公开(公告)号：US4897709A

公开(公告)日：1990-01-30

申请号：US199269

申请日：1988-05-26

申请人： Natsuki Yokoyama ,  Yoshio Homma ,  Kenji Hinode ,  Kiichiro Mukai

发明人： Natsuki Yokoyama ,  Yoshio Homma ,  Kenji Hinode ,  Kiichiro Mukai

IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L23/532 ,  H01L27/04 ,  H01L27/108 ,  H01L29/43

CPC分类号： H01L21/76843 ,  H01L21/76841 ,  H01L21/76877 ,  H01L23/53223 ,  H01L27/10808 ,  H01L2924/0002

摘要： A semiconductor device includes a titanium nitride film as a barrier which is formed in a hole. The width or diameter of the hole is smaller than 1 .mu.m, and the aspect ratio thereof is larger than 0.7. The sidewall of the hole is substantially perpendicular to the surface of a semiconductor substrate. By the low pressure CVD method with a cold wall type CVD apparatus, it becomes possible to form the titanium nitride film having excellent characteristics with a good step coverage in a considerably fine hole having a large aspect ratio.

摘要翻译： 半导体器件包括形成在孔中的作为势垒的氮化钛膜。 孔的宽度或直径小于1μm，纵横比大于0.7。 孔的侧壁基本上垂直于半导体衬底的表面。 通过使用冷壁型CVD装置的低压CVD法，可以在具有大纵横比的相当细小的孔中形成具有优异的阶梯覆盖性的优良特性的氮化钛膜。

公开(公告)号：US07947596B2

公开(公告)日：2011-05-24

申请号：US11526754

申请日：2006-09-26

申请人： Kenichi Takeda ,  Daisuke Ryuzaki ,  Kenji Hinode ,  Toshiyuki Mine

发明人： Kenichi Takeda ,  Daisuke Ryuzaki ,  Kenji Hinode ,  Toshiyuki Mine

IPC分类号： H01L21/00

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813

摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.

摘要翻译： 根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层 层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）nSiH 4-n表示的烷氧基硅烷（n为整数）的气体混合物形成 1〜3的范围，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。 因此，可以提供包括具有高可靠性和较少布线延迟时间的铜布线的半导体器件。