公开(公告)号：US08770026B2

公开(公告)日：2014-07-08

申请号：US13567896

申请日：2012-08-06

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: G01N29/09 ,  H01L41/00

CPC classification number: G01H11/00 ,  H03H3/0077

Abstract: Devices usable as sensors, as transducers, or as both sensors and transducers include one or more nanotubes or nanowires. In some embodiments, the devices may each include a plurality of sensor/transducer devices carried by a common substrate. The sensor/transducer devices may be individually operable, and may exhibit a plurality of resonant frequencies to enhance the operable frequency bandwidth of the devices. Sensor/transducer devices include one or more elements configured to alter a resonant frequency of a nanotube. Such elements may be selectively and individually actuable. Methods for sensing mechanical displacements and vibrations include monitoring an electrical characteristic of a nanotube. Methods for generating mechanical displacements and vibrations include using an electrical signal to induce mechanical displacements or vibrations in one or more nanotubes. Methods for adjusting an electrical signal include passing an electrical signal through a nanotube and changing a resonant frequency of the nanotube.

Abstract translation: 可用作传感器，传感器或传感器和换能器的装置包括一个或多个纳米管或纳米线。 在一些实施例中，装置可以各自包括由公共衬底承载的多个传感器/换能器装置。 传感器/换能器装置可以单独操作，并且可以呈现多个谐振频率以增强装置的可操作频率带宽。 传感器/换能器装置包括配置成改变纳米管的共振频率的一个或多个元件。 这样的元件可以是选择性地和单独地致动的。 用于感测机械位移和振动的方法包括监测纳米管的电特性。 产生机械位移和振动的方法包括使用电信号在一个或多个纳米管中引起机械位移或振动。 用于调整电信号的方法包括使电信号通过纳米管并改变纳米管的谐振频率。

公开(公告)号：US08058130B2

公开(公告)日：2011-11-15

申请号：US12196988

申请日：2008-08-22

Applicant: Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

Inventor： Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

IPC: H01L21/00

CPC classification number: H01L21/02332 ,  H01L21/0234 ,  H01L21/265 ,  H01L21/28061 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.

Abstract translation: 本发明包括将氮掺入含氧化硅的层中的方法。 将含氧化硅的层暴露于含氮等离子体中以将氮引入层中。 氮气随后在层内热退火以将至少一些氮与硅结合在层内。 本发明还包括形成晶体管的方法。 在半导体衬底上形成栅氧化层。 栅氧化层包括二氧化硅。 将栅极氧化层暴露于含氮等离子体中以将氮引入层中，并且在暴露期间该层保持在小于或等于400℃。 随后，层内的氮被热退火以将至少大部分氮与硅结合。 在栅极氧化物层上形成至少一个导电层。 源极/漏极区域形成在半导体衬底内，并且通过至少一个导电层彼此门控连接。 本发明还包括晶体管结构。

公开(公告)号：US20110056625A1

公开(公告)日：2011-03-10

申请号：US12945135

申请日：2010-11-12

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: C23F1/08 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01L21/31116

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，反应物质由含卤素和碳的气体源产生。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

公开(公告)号：US07718080B2

公开(公告)日：2010-05-18

申请号：US11503690

申请日：2006-08-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: H01L21/302 ,  B82B1/00

CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L21/3127

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。 在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。

公开(公告)号：US07632737B2

公开(公告)日：2009-12-15

申请号：US11458064

申请日：2006-07-17

Applicant: Neal R. Rueger ,  William Budge ,  Weimin Li

Inventor： Neal R. Rueger ,  William Budge ,  Weimin Li

IPC: H01L21/762

CPC classification number: H01L21/76235

Abstract: A method including, prior to a plasma heat-up operation, forming a liner on structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.

公开(公告)号：US20080143230A1

公开(公告)日：2008-06-19

申请号：US11640701

申请日：2006-12-18

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: H01J1/18 ,  H01J1/00 ,  H01J9/00 ,  B82B3/00 ,  B82B1/00

CPC classification number: H01J9/18 ,  B82Y15/00 ,  B82Y99/00 ,  H01J9/025 ,  H01J21/04 ,  H01J21/10 ,  H01J63/02 ,  H01J2201/30469 ,  Y10S977/939

Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Abstract translation: 本公开包括场发射装置实施例。 本公开还包括用于形成场发射器件的方法实施例。 一个装置实施例包括限定内部空间的壳体，该内部空间包括下部分和上部部分，位于壳体下部的阴极，耦合到阴极的细长纳米结构，位于壳体上部的阳极，以及 位于细长纳米结构和阳极之间的控制网格，以控制阳极和细长纳米结构之间的电子流。

公开(公告)号：US20080038928A1

公开(公告)日：2008-02-14

申请号：US11503681

申请日：2006-08-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: H01L21/302

CPC classification number: H01L21/31116

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，反应物质由含卤素和碳的气体源产生。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

公开(公告)号：US20080038894A1

公开(公告)日：2008-02-14

申请号：US11503690

申请日：2006-08-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: H01L21/336

CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L21/3127

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。 在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。

公开(公告)号：US07312857B2

公开(公告)日：2007-12-25

申请号：US11219540

申请日：2005-09-01

Applicant: Neal R. Rueger ,  Kevin T. Hamer

Inventor： Neal R. Rueger ,  Kevin T. Hamer

IPC: G01J3/30

CPC classification number: G01J3/443 ,  G01N21/68

Abstract: A method and system are presented for monitoring the optical emissions associated with a plasma used in integrated circuit fabrication. The optical emissions may be processed by an optical spectrometer to obtain a spectrum. The spectrum may be analyzed to determine the presence of particular disassociated species which are indicative of the presence of a suitable plasma and which may be desired for a deposition, etching, or cleaning process.

Abstract translation: 提出了一种用于监测与集成电路制造中使用的等离子体相关的光发射的方法和系统。 光发射可由光谱仪处理以获得光谱。 可以分析光谱以确定指示合适的等离子体的存在并且其可能对于沉积，蚀刻或清洁过程是期望的特定解离物种的存在。

公开(公告)号：US20070278180A1

公开(公告)日：2007-12-06

申请号：US11421711

申请日：2006-06-01

Applicant: Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington ,  Neal R. Rueger

Inventor： Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington ,  Neal R. Rueger

IPC: C03C25/68 ,  G01L21/30

CPC classification number: G01N1/32

Abstract: A method of imaging and identifying materials on and below the surface of a structure is described. The method may be used in areas as small as one micron in diameter, and may remove a thin portion of the topmost material, repeating the analysis, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. The reaction products from the radical attack on the surface are pumped away from the surface and analyzed using various methods, such as optical emission, infrared, atomic absorption, or Raman spectroscopy.

Abstract translation: 描述了一种在结构表面上和下方对材料进行成像和识别的方法。 该方法可以用于直径小至一微米的区域中，并且可以去除最上层材料的薄部分，重复分析，直到获得所需的深度。 诸如电子束的能量束被引导到选定的表面位置。 该表面具有固体，流体或气态反应性材料（例如碳氟化合物的定向流）的添加层，并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。 从表面的自由基攻击产生的反应产物从表面抽出并用各种方法进行分析，如光发射，红外，原子吸收或拉曼光谱。