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    Method for electrochemically depositing metal on a semiconductor workpiece
    11.
    发明授权
    Method for electrochemically depositing metal on a semiconductor workpiece 有权
    在半导体工件上电化学沉积金属的方法

    公开(公告)号：US06565729B2

    公开(公告)日：2003-05-20

    申请号：US09732513

    申请日：2000-12-07

    申请人： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

    发明人： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

    IPC分类号： C25D2112

    CPC分类号： H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

    摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

    摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

    Electroplating processor with geometric electrolyte flow path
    14.
    发明授权
    Electroplating processor with geometric electrolyte flow path 有权
    具有几何电解质流动路径的电镀处理器

    公开(公告)号：US08968533B2

    公开(公告)日：2015-03-03

    申请号：US13468273

    申请日：2012-05-10

    申请人： Randy A. Harris ,  Daniel J. Woodruff ,  Jeffrey I. Turner ,  Gregory J. Wilson ,  Paul R. McHugh

    发明人： Randy A. Harris ,  Daniel J. Woodruff ,  Jeffrey I. Turner ,  Gregory J. Wilson ,  Paul R. McHugh

    IPC分类号： C25D17/12 ,  C25D17/00 ,  C25D7/12

    CPC分类号： C25D17/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002

    摘要： An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.

    摘要翻译： 电镀处理器包括具有形成在通道中的连续流路的电极板。 流路可以可选地是卷绕的流动路径。 一个或多个电极定位在通道中。 膜板在它们之间附着有电极板。 电解液以高速移动通过流路，防止气泡粘到膜底部。 流动路径中的任何气泡被夹带在快速移动的电解质中并从膜中带走。 电镀处理器可以替代地具有延伸通过形成为线圈或其它形状的管状膜的线电极，任选地包括具有直段的形状。

    Electro-chemical processor
    18.
    发明授权
    Electro-chemical processor 有权
    电化学处理器

    公开(公告)号：US07927469B2

    公开(公告)日：2011-04-19

    申请号：US11467232

    申请日：2006-08-25

    申请人： Nigel Stewart ,  Daniel J. Woodruff ,  Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Erik Lund ,  Steven L. Peace

    发明人： Nigel Stewart ,  Daniel J. Woodruff ,  Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Erik Lund ,  Steven L. Peace

    IPC分类号： C25F7/00

    CPC分类号： H01L21/6719 ,  H01L21/67115 ,  H01L21/67126

    摘要： A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The second electrode may move with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

    摘要翻译： 用于制造多孔硅或处理其它衬底的处理器具有第一和第二室组件。 第一和第二室组件包括分别用于密封晶片的第一和第二密封件以及第一和第二电极。 第二密封件可朝向和远离处理器中的晶片移动，以在晶片装载/卸载位置与晶片工艺位置之间移动。 第二电极可以与第二密封件一起移动。 光源将光照射到晶片的第一面上。 处理器可以从用于加载和卸载晶片的基本上水平的方向枢转到基本垂直的取向，用于处理晶片。

    Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces
    19.
    发明授权
    Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces 有权
    用于控制容器特性的方法和装置，包括加工微型工件的形状和盗窃电流

    公开(公告)号：US07857958B2

    公开(公告)日：2010-12-28

    申请号：US11776918

    申请日：2007-07-12

    申请人： Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson

    发明人： Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson

    IPC分类号： C25D5/00 ,  C25D21/12

    CPC分类号： C25D21/12 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/007 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/6723

    摘要： A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.

    摘要翻译： 一种用于处理微特征工件的方法和装置。 在一个实施例中，该装置包括构造成在工件平面处承载微特征工件的支撑构件和至少靠近支撑构件定位的容器。 容器具有面向支撑构件的容器表面并且定位成承载处理液体。 容器表面成形为在工件平面处提供至少近似均匀的电流密度。 至少一个电极，例如电极，设置在容器内。 在该实施例的另一方面，该窃电电极可以容易地从其从处理液体吸引的导电材料移除。 在其他实施例中，容器表面的形状，提供给电极的电流和/或工件上游的孔的直径被动态地改变。

    Apparatus and method for electrochemically depositing metal on a semiconductor workpiece
    20.
    发明申请
    Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 审中-公开
    在半导体工件上电化学沉积金属的装置和方法

    公开(公告)号：US20100116671A1

    公开(公告)日：2010-05-13

    申请号：US11543270

    申请日：2006-10-03

    申请人： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

    发明人： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

    IPC分类号： C25D21/12

    CPC分类号： H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

    摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

    摘要翻译： 用于对诸如半导体工件的工件进行金属化的方法。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。