公开(公告)号：US07394083B2

公开(公告)日：2008-07-01

申请号：US11177501

申请日：2005-07-08

Applicant: Norbert R. Bowering ,  Jerzy R. Hoffman

Inventor： Norbert R. Bowering ,  Jerzy R. Hoffman

IPC: G01J1/42

CPC classification number: G03F7/7085 ,  B82Y10/00 ,  G21K2201/061

Abstract: Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi2/Si multi-layer mirror.

Abstract translation: 披露了EUV光源计量系统和方法。 在第一方面，用于测量EUV光源功率输出的系统可以包括沿着EUV光路设置的光电子源材料，以暴露材料并产生一定量的光电子。 该系统还可以包括用于检测光电子并产生指示EUV功率的输出的检测器。 在另一方面，用于测量EUV光强度的系统可以包括多层反射镜，例如Mo / Si，沿着EUV光路径可弃，以暴露反射镜并在反射镜中产生光电流。 电流监视器可以连接到反射镜以测量光电流并产生指示EUV功率的输出。 在另一方面，离线EUV测量系统可以包括用于测量光特性和MoSi 2 / Si多层反射镜的仪器。

公开(公告)号：US20110058588A1

公开(公告)日：2011-03-10

申请号：US12927012

申请日：2010-11-03

Applicant: Alexander I. Ershov ,  Igor V. Fomenkov ,  Norbert R. Bowering ,  Jerzy R. Hoffman

Inventor： Alexander I. Ershov ,  Igor V. Fomenkov ,  Norbert R. Bowering ,  Jerzy R. Hoffman

IPC: H01S3/22 ,  H01S3/00

CPC classification number: H01S3/105 ,  G03F7/70033 ,  H01S3/005 ,  H01S3/115 ,  H01S3/2232 ,  H01S3/225 ,  H01S3/2325 ,  H01S2301/02 ,  H05G2/003 ,  H05G2/008

Abstract: A device is described herein which may comprise an oscillator having an oscillator cavity length, L0, and defining an oscillator path; and a multi-pass optical amplifier coupled with the oscillator to establish a combined optical cavity including the oscillator path, the combined cavity having a length, Lcombined, where Lcombined=(N+x)*L0, where “N” is an integer and “x” is a number between 0.4 and 0.6.

Abstract translation: 本文描述了一种器件，其可以包括具有振荡器腔长度L0并且限定振荡器路径的振荡器; 和与所述振荡器耦合的多通光放大器以建立包括所述振荡器路径的组合光腔，所述组合腔具有长度L组合，其中L组合=（N + x）* L0，其中“N”是整数， “x”是介于0.4和0.6之间的数字。

公开(公告)号：US07453077B2

公开(公告)日：2008-11-18

申请号：US11323397

申请日：2005-12-29

Applicant: Norbert R. Bowering ,  Bjorn A. M. Hansson ,  Rodney D. Simmons

Inventor： Norbert R. Bowering ,  Bjorn A. M. Hansson ,  Rodney D. Simmons

IPC: G21K5/04

CPC classification number: H05G2/003 ,  H05G2/006

Abstract: An EUV light source and method of operating same is disclosed which may comprise: an EUV plasma production chamber comprising a chamber wall comprising an exit opening for the passage of produced EUV light focused to a focus point; a first EUV exit sleeve comprising a terminal end comprising an opening facing the exit opening; a first exit sleeve chamber housing the first exit sleeve and having an EUV light exit opening; a gas supply mechanism supplying gas under a pressure higher than the pressure within the plasma production chamber to the first exit sleeve chamber. The first exit sleeve may be tapered toward the terminal end opening, and may, e.g., be conical in shape comprising a narrowed end at the terminal end.

Abstract translation: 公开了一种EUV光源及其操作方法，其可以包括：EUV等离子体生成室，其包括室壁，该室壁包括用于使产生的EUV光聚焦到聚焦点的通过的出口; 第一EUV出口套筒，其包括终端，所述终端包括面向所述出口的开口; 第一出口套筒室，其容纳所述第一出口套筒并具有EUV光出口; 气体供给机构，其在高于等离子体生成室内的压力的压力下向第一出口套筒室供给气体。 第一出口套筒可以朝向终端开口渐缩，并且可以例如是在终端处包括窄端的圆锥形形状。

公开(公告)号：US07368741B2

公开(公告)日：2008-05-06

申请号：US11107535

申请日：2005-04-14

Applicant: Stephan T. Melnychuk ,  William N. Partlo ,  Igor V. Fomenkov ,  I. Roger Oliver ,  Richard M. Ness ,  Norbert R. Bowering ,  Oleh Khodykin ,  Curtis L. Rettig ,  Gerry M. Blumenstock ,  Timothy S. Dyer ,  Rodney D. Simmons ,  Jerzy R. Hoffman ,  R. Mark Johnson

Inventor： Stephan T. Melnychuk ,  William N. Partlo ,  Igor V. Fomenkov ,  I. Roger Oliver ,  Richard M. Ness ,  Norbert R. Bowering ,  Oleh Khodykin ,  Curtis L. Rettig ,  Gerry M. Blumenstock ,  Timothy S. Dyer ,  Rodney D. Simmons ,  Jerzy R. Hoffman ,  R. Mark Johnson

IPC: H01J35/20

CPC classification number: H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70175 ,  G03F7/70916 ,  H01S3/005 ,  H05G2/005 ,  H05G2/008 ,  H05H1/06

Abstract: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

Abstract translation: 本发明提供了一种可靠，高重复率的生产线兼容高能光子源。 在真空室中产生含有活性物质的非常热的等离子体。 活性物质是具有期望的极紫外（EUV）范围内的发射线的原子元素。 包括充电电容器和包括脉冲变压器的磁压缩电路的脉冲电源提供电脉冲，其具有足够的能量和电势，足以以超过5瓦的速率在中间焦点处产生EUV光。 在由申请人带内设计的优选实施例中，中间焦点处的EUV光能量可以45瓦可扩展到105.8瓦特。

公开(公告)号：US20080043321A1

公开(公告)日：2008-02-21

申请号：US11505177

申请日：2006-08-16

Applicant: Norbert R. Bowering ,  Igor V. Fomenkov

Inventor： Norbert R. Bowering ,  Igor V. Fomenkov

IPC: G02B5/08

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/182 ,  G21K1/062 ,  Y10T29/49982

Abstract: In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.

Abstract translation: 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层， 使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五阶段过渡金属的复合材料。

公开(公告)号：US08198612B2

公开(公告)日：2012-06-12

申请号：US12221313

申请日：2008-07-31

Applicant: Juan Armando Chavez ,  Norbert R. Bowering

Inventor： Juan Armando Chavez ,  Norbert R. Bowering

IPC: H01J35/20

CPC classification number: G03F7/70958 ,  G03F7/70825 ,  G03F7/70891 ,  G03F7/70925

Abstract: As disclosed herein, a device may comprise a substrate made of a material comprising silicon, the substrate having a first side and an opposed second side; an EUV reflective multi-layer coating overlaying at least a portion of the first side; an infrared absorbing coating overlaying at least a portion of the second side; and a system generating infrared radiation to heat the absorbing coating and the substrate.

Abstract translation: 如本文所公开的，装置可包括由包括硅的材料制成的衬底，该衬底具有第一侧和相对的第二侧; 覆盖所述第一侧的至少一部分的EUV反射多层涂层; 覆盖所述第二侧的至少一部分的红外吸收涂层; 以及产生红外辐射以加热吸收涂层和基底的系统。

公开(公告)号：US20110192985A1

公开(公告)日：2011-08-11

申请号：US13091923

申请日：2011-04-21

Applicant: Norbert R. Bowering ,  Oleh V. Khodykin

Inventor： Norbert R. Bowering ,  Oleh V. Khodykin

IPC: G01J1/42 ,  G02B7/18 ,  G02B5/08 ,  G01J3/10 ,  B05D5/06

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G01J1/429 ,  G03F7/70941 ,  G03F7/70958 ,  G03F7/70975 ,  G21K2201/061 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.

Abstract translation: 公开了一种用于EUV反射镜的原位监测以确定光学降解程度的方法。 该方法可以包括用具有波长在EUV谱以外的波长的光照射反射镜的至少一部分的步骤/动作，在光已经从反射镜反射之后测量光的至少一部分，并且使用该测量和 镜面退化和光反射率之间的预定关系，以估计多层镜面退化的程度。 还公开了一种用于制备近似法线入射的EUV反射镜的方法，该反射镜可以包括提供金属基底的步骤/动作，转动基底的表面的金刚石，使用物理气相沉积沉积覆盖表面的至少一种中间材料 技术，并沉积覆盖中间材料的多层镜面涂层。

公开(公告)号：US07843632B2

公开(公告)日：2010-11-30

申请号：US11505177

申请日：2006-08-16

Applicant: Norbert R. Bowering

Inventor： Norbert R. Bowering

IPC: G02B5/08 ,  G02B5/20 ,  G01J3/10 ,  H01J35/20

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/182 ,  G21K1/062 ,  Y10T29/49982

Abstract: In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.

Abstract translation: 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层，使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五段过渡金属的复合材料。

公开(公告)号：US20090230326A1

公开(公告)日：2009-09-17

申请号：US12214736

申请日：2008-06-19

Applicant: Georgiy O. Vaschenko ,  Alexander N. Bykanov ,  Norbert R. Bowering ,  David C. Brandt ,  Alexander I. Ershov ,  Rodney D. Simmons ,  Oleh V. Khodykin ,  Igor V. Fomenkov

Inventor： Georgiy O. Vaschenko ,  Alexander N. Bykanov ,  Norbert R. Bowering ,  David C. Brandt ,  Alexander I. Ershov ,  Rodney D. Simmons ,  Oleh V. Khodykin ,  Igor V. Fomenkov

IPC: G21K5/00

CPC classification number: H05G2/003 ,  H05G2/006 ,  H05G2/008

Abstract: Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.

Abstract translation: 本文公开的装置可以包括具有限定旋转轴线和圆形周边的旋转表面的EUV反射光学元件。 光学元件可以被定位成相对于水平面以非零角度倾斜轴，并且在水平面中建立周边的垂直投影，其中周边突起界定水平面中的一个区域。 该装置还可以包括传送目标材料的系统，该系统具有位于水平面内的区域外的外围突起的边界材料释放点和产生用于照射目标材料产生的激光束的系统 EUV排放。

公开(公告)号：US07589337B2

公开(公告)日：2009-09-15

申请号：US12075631

申请日：2008-03-12

Applicant: Alexander N. Bykanov ,  J. Martin Algots ,  Oleh V. Khodykin ,  Oscar Hemberg ,  Norbert R. Bowering

Inventor： Alexander N. Bykanov ,  J. Martin Algots ,  Oleh V. Khodykin ,  Oscar Hemberg ,  Norbert R. Bowering

IPC: A61N5/06 ,  G01J3/10 ,  H05G2/00

CPC classification number: H05G2/001

Abstract: An EUV light generation system and method is disclosed that may comprise a droplet generator producing plasma source material target droplets traveling toward the vicinity of a plasma source material target irradiation site; a drive laser; a drive laser focusing optical element having a first range of operating center wavelengths; a droplet detection radiation source having a second range of operating center wavelengths; a drive laser steering element comprising a material that is highly reflective within at least some part of the first range of wavelengths and highly transmissive within at least some part of the second range of center wavelengths; a droplet detection radiation aiming mechanism directing the droplet detection radiation through the drive laser steering element and the lens to focus at a selected droplet detection position intermediate the droplet generator and the irradiation site.

Abstract translation: 公开了一种EUV发光系统和方法，其可以包括产生等离子体源材料的液滴发生器，目标液滴朝向等离子体源材料目标照射位置附近行进; 驱动激光器 具有第一操作中心波长范围的驱动激光聚焦光学元件; 具有第二操作中心波长范围的液滴检测辐射源; 驱动激光操纵元件，其包括在第一波长范围的至少一部分内具有高度反射性的材料，并且在第二中心波长范围的至少一部分内具有高度透射性的材料; 液滴检测辐射瞄准机构，其引导液滴检测辐射通过驱动激光转向元件和透镜，以聚焦在液滴发生器和照射部位之间的选定液滴检测位置。