公开(公告)号：US20210136275A1

公开(公告)日：2021-05-06

申请号：US16674964

申请日：2019-11-05

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Johannes Solhusvik

IPC: H04N5/235 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/353

Abstract: A pixel includes an array of a plurality of photodiodes. The array of photodiodes includes a plurality of rows of photodiodes and a plurality of columns of photodiodes. The plurality of photodiodes includes a set of first photodiodes that has a first surface area and at least one second photodiode that has a second surface area that is smaller than the first surface area. The first photodiodes are arranged to be symmetric with respect to the at least one second photodiode. Output circuitry is electrically coupled to each of the first photodiodes in the set of first photodiodes. A switch is selectively, operably closed to electrically couple the output circuitry to the second photodiode.

公开(公告)号：US10136084B1

公开(公告)日：2018-11-20

申请号：US15726860

申请日：2017-10-06

Applicant: OmniVision Technologies, Inc.

Inventor： Tharald Andersen Solheim ,  Johannes Solhusvik

IPC: H04N5/359 ,  H04N5/3745 ,  H04N5/355 ,  H04N5/353 ,  H01L27/146 ,  H04N5/235

Abstract: Apparatuses and methods for a skimming photodiode with high dynamic range (HDR) and reduced Light Emitting Diode (LED) flicker in imaging system are disclosed herein. A voltage generator provides a transfer gate voltage to a transfer transistor. The transfer gate voltage is a voltage selected one of a transfer-on, a transfer-off, and a skimming voltage. The transfer transistor transfers charges generated on a Complementary Metal-Oxide-Semiconductor (CMOS) photodiode (PD) to a floating diffusion (FD). The voltage on transfer gate controls the amount of the charges that can be transferred from the PD to the FD. A reset transistor precharges the PD and FD to an AVDD. A first enable transistor controls the amount of charges transferred from the FD to a first capacitor. A second enable transistor controls the amount of charges transferred from the FD to a second capacitor. The first and second enable transistors receive their individual periodical control pulses once activated. Charges collected on the first and second capacitors are transferred to the FD. A source follower transistor amplifies voltage appeared on the FD. A row select transistor sends the amplified voltage to the bitline for signal readout.

公开(公告)号：US10044960B2

公开(公告)日：2018-08-07

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US20180098008A1

公开(公告)日：2018-04-05

申请号：US15285352

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14636 ,  H01L27/14656 ,  H04N5/374 ,  H04N5/378

Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.

公开(公告)号：US20170347047A1

公开(公告)日：2017-11-30

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

CPC classification number: H04N5/374 ,  H01L27/14612 ,  H01L27/14641 ,  H04N5/23229 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452 ,  H04N5/37457

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US09667895B2

公开(公告)日：2017-05-30

申请号：US14707572

申请日：2015-05-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Johannes Solhusvik ,  Howard E. Rhodes ,  Jie Shen

IPC: H04N5/374 ,  H04N5/3745

CPC classification number: H04N5/37457

Abstract: An image sensor includes a pixel array disposed in a first semiconductor die. The pixel array is partitioned into a plurality of pixel sub-arrays. Each one of the plurality of pixel sub-arrays is arranged into a plurality of pixel groups. Each one of the plurality of pixel groups is arranged into a p×q array of pixel cells. A plurality of readout circuits is disposed in a second semiconductor die. An interconnect layer is stacked between the first semiconductor die and the second semiconductor die. The interconnect layer includes a plurality of conductors. Each one of the plurality of pixel sub-arrays is coupled to a corresponding one of the plurality of readout circuits through a corresponding one of the plurality of conductors.

公开(公告)号：US09406718B2

公开(公告)日：2016-08-02

申请号：US14500193

申请日：2014-09-29

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Johannes Solhusvik ,  Dominic Massetti

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14831 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/2351 ,  H04N5/353 ,  H04N5/3535 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.

Abstract translation: 像素单元包括响应于入射光耦合到光生成图像电荷的光电二极管。 深沟槽隔离结构靠近光电二极管设置，以通过深沟槽隔离结构提供与光电二极管的电容耦合。 放大器晶体管耦合到深沟槽隔离结构以响应于通过由深沟槽隔离结构提供的电容耦合从光电二极管读出的图像电荷来产生放大的图像数据。 行选择晶体管耦合到放大器晶体管的输出，以选择性地将放大的图像数据输出到耦合到行选择晶体管的列位线。

公开(公告)号：US09402039B2

公开(公告)日：2016-07-26

申请号：US14554787

申请日：2014-11-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Johannes Solhusvik ,  Robert Johansson

IPC: H04N5/235 ,  H04N5/335 ,  H04N5/355 ,  H04N5/359 ,  H04N5/3745

CPC classification number: H04N5/3559 ,  H04N5/3594 ,  H04N5/37452

Abstract: A method of reading out a pixel includes resetting a photodetector of the pixel. Light incident on the photodetector is then integrated for a single exposure of a single image capture. A floating diffusion node of the pixel is then reset. The floating diffusion is set to low conversion gain and a low conversion gain reset signal is sampled from the floating diffusion node. The floating diffusion is set to high conversion gain and a high conversion gain reset signal is sampled from the floating diffusion node. Charge carriers are transferred from the photodetector to the floating diffusion node and a high conversion image signal is then sampled from the floating diffusion node. The floating diffusion is set to low conversion gain. Charge carriers are transferred again from the photodetector to the floating diffusion node and a low conversion image signal is sampled from the floating diffusion node.

Abstract translation: 读出像素的方法包括复位像素的光电检测器。 然后入射在光电检测器上的光被集成用于单次图像捕获的单次曝光。 然后复位像素的浮动扩散节点。 浮动扩散设置为低转换增益，并且从浮动扩散节点采样低转换增益复位信号。 浮动扩散被设置为高转换增益，并且从浮动扩散节点采样高转换增益复位信号。 电荷载体从光电检测器传送到浮动扩散节点，然后从浮动扩散节点采样高转换图像信号。 浮动扩散设置为低转换增益。 电荷载体从光电检测器再次传输到浮动扩散节点，并且从浮动扩散节点采样低转换图像信号。

公开(公告)号：US20150201140A1

公开(公告)日：2015-07-16

申请号：US14554787

申请日：2014-11-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Johannes Solhusvik ,  Robert Johansson

IPC: H04N5/355 ,  H04N5/353 ,  H04N5/235 ,  H04N5/3745

CPC classification number: H04N5/3559 ,  H04N5/3594 ,  H04N5/37452

Abstract: A method of reading out a pixel includes resetting a photodetector of the pixel. Light incident on the photodetector is then integrated for a single exposure of a single image capture. A floating diffusion node of the pixel is then reset. The floating pixel is set to low conversion gain and a low conversion gain reset signal is sampled from the floating diffusion node. The floating diffusion is set to high conversion gain and a high conversion gain reset signal is sampled from the floating diffusion node. Charge carriers are transferred from the photodetector to the floating diffusion node and a high conversion image signal is then sampled from the floating diffusion node. The floating diffusion is set to low conversion gain. Charge carriers are transferred again from the photodetector to the floating diffusion node and a low conversion image signal is sampled from the floating diffusion node.

Abstract translation: 读出像素的方法包括复位像素的光电检测器。 然后入射在光电检测器上的光被集成用于单次图像捕获的单次曝光。 然后复位像素的浮动扩散节点。 浮动像素被设置为低转换增益，并且从浮动扩散节点采样低转换增益复位信号。 浮动扩散被设置为高转换增益，并且从浮动扩散节点采样高转换增益复位信号。 电荷载体从光电检测器传送到浮动扩散节点，然后从浮动扩散节点采样高转换图像信号。 浮动扩散设置为低转换增益。 电荷载体从光电检测器再次传输到浮动扩散节点，并且从浮动扩散节点采样低转换图像信号。