公开(公告)号：US20170200860A1

公开(公告)日：2017-07-13

申请号：US15313531

申请日：2015-05-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian PERZLMAIER ,  Bjoern MUERMANN ,  Karl ENGL ,  Christian EICHINGER

IPC: H01L33/38 ,  H01L31/0224 ,  H01L51/44 ,  H01L33/42 ,  H01L51/52

CPC classification number: H01L33/38 ,  H01L31/022466 ,  H01L33/42 ,  H01L51/442 ,  H01L51/445 ,  H01L51/5203 ,  H01L51/5215 ,  H01L51/5234 ,  Y02E10/549

Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1).Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.

公开(公告)号：US20160300829A1

公开(公告)日：2016-10-13

申请号：US15038034

申请日：2014-11-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christian LEIRER ,  Berthold HAHN ,  Karl ENGL ,  Johannes BAUR ,  Siegfried HERRMANN ,  Andreas PLOESSL ,  Simeon KATZ ,  Tobias MEYER ,  Lorenzo ZINI ,  Markus MAUTE

IPC: H01L27/02 ,  H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L27/0248 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/15 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

Abstract translation: 描述了具有用于过压保护的内置桥接元件（9,9A）的光电子半导体芯片（1）。