公开(公告)号：US20160049556A1

公开(公告)日：2016-02-18

申请号：US14779940

申请日：2014-03-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Markus MAUTE

IPC: H01L33/46 ,  H01L33/62 ,  H01L33/54

CPC classification number: H01L33/46 ,  H01L33/145 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62

Abstract: A radiation-emitting semiconductor chip (1) is specified, comprising—a semiconductor layer sequence (2) having a first main surface (3) and a second main surface (4) situated opposite the first main surface (3) wherein the semiconductor layer sequence (2) has an active zone (5) suitable for generating electromagnetic radiation, —a structured mirror layer (6), which is electrically non-conductive during operation and is arranged on the side of the first main surface (3) of the semiconductor layer sequence (2), wherein the mirror layer (6) has at least one mirror region (6A, 6B, 6C) which regionally covers the first main surface (3), —at least one encapsulation region (7A, 7B, 7C) which surrounds the at least one mirror region (6A, 6B, 6C) on all sides and is in direct contact with the mirror region (6A, 6B, 6C), wherein the at least one encapsulation region (7A, 7B, 7C); is electrically non-conductive during operation.

Abstract translation: 一种辐射发射半导体芯片（1），其特征在于包括 - 具有与第一主表面（3）相对的第一主表面（3）和第二主表面（4）的半导体层序列（2），其中半导体层 序列（2）具有适于产生电磁辐射的活性区域（5）， - 在操作期间不导电的结构化镜层（6），并且布置在第一主表面（3）的侧面 半导体层序列（2），其中所述镜层（6）具有区域地覆盖所述第一主表面（3）的至少一个镜面区域（6A，6B，6C）， - 至少一个封装区域（7A，7B，7C ），其在所有侧面上围绕所述至少一个镜区域（6A，6B，6C）并且与所述镜区域（6A，6B，6C）直接接触，其中所述至少一个封装区域（7A，7B，7C） ; 在操作期间是非导电的。

公开(公告)号：US20160300829A1

公开(公告)日：2016-10-13

申请号：US15038034

申请日：2014-11-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christian LEIRER ,  Berthold HAHN ,  Karl ENGL ,  Johannes BAUR ,  Siegfried HERRMANN ,  Andreas PLOESSL ,  Simeon KATZ ,  Tobias MEYER ,  Lorenzo ZINI ,  Markus MAUTE

IPC: H01L27/02 ,  H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L27/0248 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/15 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

Abstract translation: 描述了具有用于过压保护的内置桥接元件（9,9A）的光电子半导体芯片（1）。

公开(公告)号：US20180108695A1

公开(公告)日：2018-04-19

申请号：US15573414

申请日：2016-05-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus MAUTE

IPC: H01L27/146 ,  H01L25/075 ,  H01L33/62 ,  F21V5/04 ,  H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/46

CPC classification number: H01L27/14625 ,  F21V5/04 ,  H01L25/0753 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/465 ,  H01L33/486 ,  H01L33/56 ,  H01L33/62

Abstract: The invention relates to an optoelectronic semiconductor component (100) comprising the following —an optoelectronic semiconductor chip (2), the lateral surfaces (2c) and lower face (2b) of which are at least partly covered by a molded body (3) that is electrically conductive and is designed to electrically contact the optoelectronic semiconductor chip (2), —at least one via (6) which comprises an electrically conductive material and is laterally spaced from the semiconductor chip (2), said via (6) completely passing through the molded body (3), wherein the via (6) extends from an upper face (3a) of the molded body (3) to a lower face (3b) of the molded body (3), —at least one insulating element (9) which is arranged within the molded body (3) between the via (6) and the semiconductor chip (2) and extends from the upper face (3a) of the molded body (3) to the lower face (3b) of the molded body (3), and —an electrically conductive connection (7) which is connected to the semiconductor chip (2) and the via (6) in an electrically conductive manner.