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    SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
    1.
    发明申请
    SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT 审中-公开

    公开(公告)号：US20200168767A1

    公开(公告)日：2020-05-28

    申请号：US16615835

    申请日：2018-05-17

    申请人： Osram Opto Semiconductors GmbH

    发明人： Isabel OTTO ,  Anna KASPRZAK-ZABLOCKA ,  Christian LEIRER ,  Berthold HAHN

    IPC分类号： H01L33/38 ,  H01L31/0216 ,  H01L31/0224 ,  H01L33/40 ,  H01L33/00 ,  H01L33/32

    摘要： A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.

    OPTOELECTRONIC COMPONENT
    4.
    发明申请
    OPTOELECTRONIC COMPONENT 审中-公开

    公开(公告)号：US20180315891A1

    公开(公告)日：2018-11-01

    申请号：US15770334

    申请日：2016-10-24

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Berthold HAHN ,  Korbinian PERZLMAIER ,  Christian LEIRER ,  Anna KASPRZAK-ZABLOCKA

    IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/44 ,  H01L23/00

    摘要： The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer (10) is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component (100) comprises a first contact structure (11) and a second structure (12), by means of which the semiconductor layer sequence (1) can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (11, 12), wherein an operation-related voltage difference ΔUbet between the contact structures (11, 12) arises. When the voltage difference is increased, a first arc-over occurs in or on the component (100) between the two contact structures (11, 12). A spark gap (3) between the contact structures (11, 12), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting. The first arc-over occurs at a voltage difference of 2·ΔUbet at the earliest.