公开(公告)号：US20180301590A1

公开(公告)日：2018-10-18

申请号：US15524618

申请日：2015-11-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes BAUR ,  Lutz HOEPPEL

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/62 ,  H01L33/52 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/18

CPC classification number: H01L33/005 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02327 ,  H01L31/18 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/52 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: Disclosed is an optoelectronic semiconductor chip (10) comprising: —a succession of semiconductor layers (1) that has a main plane of extension, an active layer (12) and a bottom surface (1c); —a substrate (41) that is arranged on the bottom surface (1c) of the succession of semiconductor layers (1) and has a base surface (41c) facing away from the bottom surface (1c); and —a succession of joining layers (3) which is arranged in at least some locations between the succession of semiconductor layers (1) and the substrate (41) in a vertical direction; wherein —the substrate (41) laterally protrudes from the succession of semiconductor layers (1) by a maximum of 10 μm.

公开(公告)号：US20160300829A1

公开(公告)日：2016-10-13

申请号：US15038034

申请日：2014-11-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christian LEIRER ,  Berthold HAHN ,  Karl ENGL ,  Johannes BAUR ,  Siegfried HERRMANN ,  Andreas PLOESSL ,  Simeon KATZ ,  Tobias MEYER ,  Lorenzo ZINI ,  Markus MAUTE

IPC: H01L27/02 ,  H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L27/0248 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/15 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

Abstract translation: 描述了具有用于过压保护的内置桥接元件（9,9A）的光电子半导体芯片（1）。