公开(公告)号：US20190097088A1

公开(公告)日：2019-03-28

申请号：US16081402

申请日：2017-02-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sophia HUPPMANN ,  Simeon KATZ ,  Marcus ZENGER

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/42 ,  H01L27/15

Abstract: An optoelectronic device (50) comprising a semiconductor body (10a, 10b, 10c) having an optically active region (12), a carrier (60), and a pair of connection layers (30a, 30b, 30c) having a first connection layer (32) and a second connection layer (34), wherein: the semiconductor body is disposed on the carrier, the first connection layer is disposed between the semiconductor body and the carrier and is connected to the semiconductor body, the second connection layer is disposed between the first connection layer and the carrier, at least one layer selected from the first connection layer and the second connection layer contains a radiation-permeable and electrically conductive oxide, and the first connection layer and the second connection layer are directly connected to each other at least in regions in one or more bonding regions, so that the pair of connection layers is involved in the mechanical connection of the semiconductor body to the carrier. A production process is also specified.

公开(公告)号：US20180040485A1

公开(公告)日：2018-02-08

申请号：US15552258

申请日：2016-02-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas RUECKERL ,  Roland ZEISEL ,  Simeon KATZ

IPC: H01L21/3213 ,  H01L33/00 ,  H01S5/22 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/0304 ,  H01L33/44 ,  H01L21/02

CPC classification number: H01L21/3213 ,  H01L21/02389 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/03044 ,  H01L33/0075 ,  H01L33/44 ,  H01L2933/0025 ,  H01S5/22

Abstract: The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.

公开(公告)号：US20200168472A1

公开(公告)日：2020-05-28

申请号：US16714447

申请日：2019-12-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas RUECKERL ,  Roland ZEISEL ,  Simeon KATZ

IPC: H01L21/3213 ,  H01L31/0304 ,  H01S5/22 ,  H01L33/44 ,  H01L33/00 ,  H01L31/0236 ,  H01L31/0232 ,  H01L21/02

Abstract: The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.

公开(公告)号：US20160300829A1

公开(公告)日：2016-10-13

申请号：US15038034

申请日：2014-11-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christian LEIRER ,  Berthold HAHN ,  Karl ENGL ,  Johannes BAUR ,  Siegfried HERRMANN ,  Andreas PLOESSL ,  Simeon KATZ ,  Tobias MEYER ,  Lorenzo ZINI ,  Markus MAUTE

IPC: H01L27/02 ,  H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L27/0248 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/15 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

Abstract translation: 描述了具有用于过压保护的内置桥接元件（9,9A）的光电子半导体芯片（1）。