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公开(公告)号:US20200056879A1
公开(公告)日:2020-02-20
申请号:US16665912
申请日:2019-10-28
Inventor: Kazuko NISHIMURA , Yasuo MIYAKE , Yoshiaki SATOU , Osamu SHIBATA , Hiroshi IWAI
IPC: G01B11/14 , G06T7/70 , H04N5/232 , G08G1/16 , G08G1/09 , H04N5/374 , G06T7/20 , G01P3/36 , H04N5/355 , H04N5/351 , G01B11/00
Abstract: An imaging device includes a pixel. The pixel includes: a first electrode; a second electrode facing the first electrode; a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting light into signal charge; and a charge accumulation region coupled to the second electrode, the charge accumulation region accumulating the signal charge. The pixel captures first data in a first exposure period and captures second data in a second exposure period different from the first exposure period, the first exposure period and the second exposure period being included in a frame period. A length of the first exposure period is different from a length of the second exposure period. The imaging device generates multiple-exposure image data including at least the first data and the second data.
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公开(公告)号:US20190051693A1
公开(公告)日:2019-02-14
申请号:US16161903
申请日:2018-10-16
Inventor: Kazuko NISHIMURA , Yutaka ABE , Masashi MURAKAMI , Yoshiyuki MATSUNAGA
IPC: H01L27/146 , H04N5/378 , H04N5/357 , H04N5/363
CPC classification number: H01L27/14643 , H04N5/3575 , H04N5/363 , H04N5/378
Abstract: An imaging device having a pixel including a photoelectric converter that generates electric signal; first transistor having a gate coupled to the photoelectric converter; second transistor one of a source and a drain of which is coupled to one of a source and a drain of the first transistor; third transistor one of a source and a drain of which is coupled to the other of the source and the drain of the second transistor, the other of the source and the drain of the third transistor coupled to the photoelectric converter; first capacitor having a first and second ends, the first end coupled to the other of the source and the drain of the second transistor, first reference voltage applied to the second end; and second capacitor having a third and fourth ends, the third end coupled to the first end, the fourth end coupled to the photoelectric converter.
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13.
公开(公告)号:US20180278862A1
公开(公告)日:2018-09-27
申请号:US15926435
申请日:2018-03-20
Inventor: Osamu SHIBATA , Hiroshi IWAI , Kazuko NISHIMURA , Yasuo MIYAKE , Yoshiaki SATOU
Abstract: An object is to extract the motion tracks of other vehicles from an image taken from a target vehicle. An image generating apparatus includes: a determiner circuit that determines whether surroundings of the target vehicle are in a dark place; and a control circuit that causes an image sensor including a high-sensitivity cell and a highly-saturated cell to create a highly-saturated frame by multiple exposures through the highly-saturated cell, the highly-saturated cell having lower sensitivity and larger charge storage capacity than the high-sensitivity cell, when the determiner circuit determines that the surroundings of the target vehicle are in the dark place.
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公开(公告)号:US20240387570A1
公开(公告)日:2024-11-21
申请号:US18787407
申请日:2024-07-29
Inventor: Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H10K30/00
Abstract: A camera system including a lens; and an imaging device that receives a light through the lens. The imaging device includes: a semiconductor substrate; a photoelectric converter that is configured to convert the light into a signal charge and that is stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first state and a second state, a sensitivity in the first state being different from a sensitivity in the second state, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.
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公开(公告)号:US20240313012A1
公开(公告)日:2024-09-19
申请号:US18671434
申请日:2024-05-22
Inventor: Sanshiro SHISHIDO , Masashi MURAKAMI , Kazuko NISHIMURA
IPC: H01L27/146 , H04N23/50 , H04N23/55 , H04N25/57 , H04N25/585 , H04N25/75 , H04N25/76
CPC classification number: H01L27/14612 , H01L27/14609 , H01L27/14627 , H01L27/14643 , H04N25/57 , H04N25/585 , H04N25/75 , H04N25/76 , H04N23/50 , H04N23/55
Abstract: An imaging device including a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; and a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion. The area of the second photoelectric converter is greater than the area of the first photoelectric converter in a plan view, and the number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than the number of saturation charges of a second imaging cell including the second photoelectric converter.
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公开(公告)号:US20240297200A1
公开(公告)日:2024-09-05
申请号:US18659863
申请日:2024-05-09
Inventor: Masashi MURAKAMI , Kazuko NISHIMURA , Yasuo MIYAKE , Yasunori INOUE
IPC: H01L27/146 , H01L27/142 , H01L31/14 , H04N25/571 , H04N25/76 , H04N25/77 , H10K30/80 , H10K39/32 , H10K50/80
CPC classification number: H01L27/14665 , H01L27/142 , H01L27/14601 , H01L27/14609 , H01L27/1461 , H01L31/143 , H10K39/32 , H04N25/571 , H04N25/76 , H04N25/77 , H10K30/80 , H10K50/80
Abstract: An imaging device including a photoelectric convertor that includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which a rate of change of the photoelectric conversion efficiency of the photoelectric convertor with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a first voltage is applied to the first electrode or the second electrode so that a bias voltage between the first electrode and the second electrode exists in the first voltage range.
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17.
公开(公告)号:US20230060498A1
公开(公告)日:2023-03-02
申请号:US17982057
申请日:2022-11-07
Inventor: Yoshiaki SATOU , Kazuko NISHIMURA , Yasuo MIYAKE , Osamu SHIBATA , Hiroshi IWAI
IPC: H04N5/235 , G03B11/04 , G03B7/16 , H04N5/243 , H04N5/33 , H04N5/232 , H04N9/04 , G06V10/50 , G06V10/60 , G06V10/143 , G06V10/147 , G06V20/56 , G06V20/59 , G06V30/224 , G06V40/16
Abstract: An imaging device including a first filter that passes a first light and a second light; a second filter that blocks the second light; photoelectric converters that have sensitivity to the first light and the second light; and a processor, in which one of the photoelectric converters detects a light passing through the first filter to generate a first signal, one of the photoelectric converters detects a light passing through the first filter and the second filter to generate a second signal, and the processor performs the second light sensing based on the first signal and the second signal.
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公开(公告)号:US20210092312A1
公开(公告)日:2021-03-25
申请号:US17116121
申请日:2020-12-09
Inventor: Masashi MURAKAMI , Kazuko NISHIMURA , Yasuo MIYAKE , Yasunori INOUE
IPC: H04N5/355
Abstract: An imaging device including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a voltage supply circuit that applies a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor being configured to output a signal that corresponds to a potential of the gate; and a detection circuit that is configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range, in a case where the level detected by the detection circuit is less than a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range, in a case where the level detected by the detection circuit is greater than a second threshold value.
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公开(公告)号:US20180331141A1
公开(公告)日:2018-11-15
申请号:US16045553
申请日:2018-07-25
Inventor: Sanshiro SHISHIDO , Masashi MURAKAMI , Kazuko NISHIMURA
IPC: H01L27/146 , H04N5/378 , H04N5/374 , H04N5/355
CPC classification number: H01L27/14612 , H01L27/14609 , H01L27/14627 , H01L27/14643 , H04N5/355 , H04N5/35563 , H04N5/374 , H04N5/378
Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.
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公开(公告)号:US20180166479A1
公开(公告)日:2018-06-14
申请号:US15878902
申请日:2018-01-24
Inventor: Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H01L51/42
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H01L51/42
Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.
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