公开(公告)号：US11171228B2

公开(公告)日：2021-11-09

申请号：US16708051

申请日：2019-12-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hideyuki Okita ,  Manabu Yanagihara ,  Masahiro Hikita

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/207 ,  H01L29/45 ,  H01L21/02 ,  H01L21/265

Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer disposed above the substrate; a second nitride semiconductor layer disposed above the first nitride semiconductor layer and having a band gap larger than a band gap of the first nitride semiconductor layer; a third nitride semiconductor layer selectively disposed above the second nitride semiconductor layer and containing a p-type first impurity element; a high resistance region disposed in the third nitride semiconductor layer, the high resistance region containing a second impurity element and having a specific resistance higher than a specific resistance of the third nitride semiconductor layer; and a gate electrode disposed above the high resistance region, wherein an end of the high resistance region is inside a surface end of the third nitride semiconductor layer.

公开(公告)号：US11031935B2

公开(公告)日：2021-06-08

申请号：US17003900

申请日：2020-08-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daijiro Arisawa ,  Takeshi Azuma ,  Daisuke Yamamoto ,  Yoshihisa Minami ,  Manabu Yanagihara

IPC: H03K3/00 ,  H03K3/017 ,  H03K17/06 ,  H03K17/14 ,  H03K17/16 ,  H03K17/687 ,  H02M1/08 ,  H02M1/34 ,  H03K17/74

Abstract: A switching circuit includes; a switching element; a driver; a diode connected between a source terminal and a gate terminal of the switching element; a resistor connected between the driver and the gate terminal of the switching element; a series circuit connected in parallel with the resistor, and including a capacitor and a resistor; and a diode including an anode on a side of the gate terminal of the switching element and a cathode on a side of a second output terminal of the driver. The diode is connected in parallel with at least the capacitor out of the capacitor and the resistor connected in series.

公开(公告)号：US10312339B2

公开(公告)日：2019-06-04

申请号：US15728141

申请日：2017-10-09

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

公开(公告)号：US10083870B2

公开(公告)日：2018-09-25

申请号：US15925050

申请日：2018-03-19

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Takahiro Ohori ,  Ayanori Ikoshi ,  Hiroto Yamagiwa ,  Manabu Yanagihara

IPC: H01L29/00 ,  H01L21/8232 ,  H01L27/06 ,  H01L27/095 ,  H01L27/098 ,  H01L29/872 ,  H01L29/808 ,  H01L29/812 ,  H01L29/868 ,  H01L29/778 ,  H01L29/747 ,  H01L29/861

CPC classification number: H01L21/8232 ,  H01L21/8252 ,  H01L27/0266 ,  H01L27/06 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/085 ,  H01L27/095 ,  H01L27/098 ,  H01L28/20 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/747 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872

Abstract: A semiconductor device includes: a first bidirectional switch element including a first gate electrode, a second gate electrode, a first electrode, and a second electrode; a first field-effect transistor including a third gate electrode, a third electrode, and a fourth electrode; and a second field-effect transistor including a fourth gate electrode, a fifth electrode, and a sixth electrode. The first electrode is electrically connected to the third gate electrode, the first gate electrode is electrically connected to the third electrode, the second electrode is electrically connected to the fourth gate electrode, the second gate electrode is electrically connected to the fifth electrode, and the fourth electrode is electrically connected to the sixth electrode.

公开(公告)号：US09905563B2

公开(公告)日：2018-02-27

申请号：US15380642

申请日：2016-12-15

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Takahiro Ohori ,  Chikashi Hayashi ,  Manabu Yanagihara

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/095 ,  H01L27/06 ,  H01L27/098 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423

CPC classification number: H01L27/095 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0883 ,  H01L27/098 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor device includes: a first semiconductor layer stacked body including a compound semiconductor; a first field-effect transistor element including a first drain electrode, a first source electrode, and a first gate electrode that are provided on the first semiconductor layer stacked body; a second semiconductor layer stacked body including a compound semiconductor; and a second field-effect transistor element including a second drain electrode, a second source electrode, and a second gate electrode that are provided on the second semiconductor layer stacked body. The second gate electrode forms a Schottky junction or a p-n junction with the second semiconductor layer stacked body, the second drain electrode is connected to the first drain electrode, the second source electrode is connected to the first gate electrode, and the second gate electrode is connected to the first source electrode.

公开(公告)号：US11257918B2

公开(公告)日：2022-02-22

申请号：US16723761

申请日：2019-12-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke Kanda ,  Hideyuki Okita ,  Manabu Yanagihara ,  Takeshi Harada

IPC: H01L29/778 ,  H01L29/45 ,  H01L21/285 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: A semiconductor device includes a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; an ohmic electrode above the substrate; and a contact layer in contact with at least a part of the ohmic electrode, the contact layer containing silicon and chlorine. The second nitride semiconductor layer has a wider band gap than the first nitride semiconductor layer. A two-dimensional electron gas channel is formed in the first nitride semiconductor layer at a heterointerface between the first nitride semiconductor layer and the second nitride semiconductor layer. A silicon concentration has a higher peak value than a chlorine concentration in the contact layer.

公开(公告)号：US20210258008A1

公开(公告)日：2021-08-19

申请号：US17308805

申请日：2021-05-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daijiro Arisawa ,  Takeshi Azuma ,  Daisuke Yamamoto ,  Yoshihisa Minami ,  Manabu Yanagihara

IPC: H03K17/687 ,  H02M1/08 ,  H02M1/34 ,  H03K17/74

Abstract: A switching circuit includes: a normally-off junction field-effect GaN transistor including source, drain, and gate terminals; a drive device of one output type electrically connected to the gate terminal; a first rectifier, between the source terminal and the gate terminal, including an anode on a source terminal side and a cathode on a gate terminal side; a capacitor between a cathode side of the first rectifier and the drive device; a first resistor between the capacitor and the drive device; a second resistor, one side of the second resistor being connected to the drive device, another side of the second resistor being connected between the cathode side of the first rectifier and the capacitor; and a second rectifier including an anode on a capacitor side and a cathode on a drive device side. No resistor is provided between the cathode side of the second rectifier and the drive device.