METHOD OF MANUFACTURING ELEMENT CHIP
    11.
    发明申请

    公开(公告)号:US20190074185A1

    公开(公告)日:2019-03-07

    申请号:US16103025

    申请日:2018-08-14

    Abstract: Method of manufacturing an element chip which can suppress residual debris in plasma dicing. A back surface of a semiconductor wafer is held on a dicing tape. Then, a surface of the wafer is coated with a mask that includes a water-insoluble lower mask and a water-soluble upper mask. Subsequently, an opening is formed in the mask by irradiating the mask with laser light to expose a dividing region. Then, the semiconductor wafer is caused to come into contact with water to remove the upper mask covering each of the element regions while leaving the lower layer. After that, the wafer is exposed to plasma to perform etching on the dividing region exposed from the opening until the etching reaches the back surface, thereby dicing the semiconductor wafer into a plurality of element chips. Thereafter, the lower layer mask left on the front surface of the semiconductor chips is removed.

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    12.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20160293381A1

    公开(公告)日:2016-10-06

    申请号:US15000374

    申请日:2016-01-19

    Abstract: A plasma processing apparatus includes: a reaction chamber; a stage which is disposed inside the reaction chamber and on which a conveyance carrier is mountable; an electrostatic chuck mechanism including an electrode portion that is disposed inside the stage; a support portion which supports the conveyance carrier between a stage-mounted position on the stage and a transfer position that is distant from the stage upward; and an elevation mechanism which elevates and lowers the support portion relative to the stage. In a case in which the conveyance carrier is mounted on the stage by lowering the support portion, the electrostatic chuck mechanism starts applying a voltage to the electrode portion before contact of an outer circumferential portion of a holding sheet which holds the conveyance carrier to the stage.

    Abstract translation: 一种等离子体处理装置,包括:反应室; 设置在反应室内的台架,输送载体可安装在该台上; 静电吸盘机构,其包括设置在所述台内部的电极部; 支撑部分,其在台架上的台安装位置和远离台架的传送位置之间支撑传送载体; 以及升降机构,其使支撑部相对于台升高并降低。 在通过降低支撑部分而将输送载体安装在载物架上的情况下,静电卡盘机构在将保持输送载体的保持片材的外周部分接触到台阶之前开始向电极部分施加电压 。

    PLASMA PROCESSING APPARATUS AND METHOD
    13.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD 有权
    等离子体加工设备和方法

    公开(公告)号:US20150340203A1

    公开(公告)日:2015-11-26

    申请号:US14716000

    申请日:2015-05-19

    Abstract: A plasma processing apparatus includes a processing chamber, a plasma source that generates plasma within the processing chamber, a transfer carrier that has a holding sheet and a frame, the holding sheet holding a substrate, and the frame being attached to the holding sheet so as to surround the substrate, a stage that is provided within the processing chamber and has a gas supply hole formed in a mounting area of the stage for mounting the transfer carrier thereon, an electrostatic chucking part that is provided within the stage and electrostatically attracts the transfer carrier, and a gas supply part that supplies gas through the gas supply hole of the stage to assist separation of the transfer carrier from the stage.

    Abstract translation: 等离子体处理装置包括处理室,在处理室内产生等离子体的等离子体源,具有保持片和框架的转印载体,保持片保持基板,框架安装在保持片上,以便 为了围绕基板,设置在处理室内并具有形成在载物台的安装区域中的气体供给孔的台架,设置在载物台内并静电吸引转印体的静电吸附部件 载体和气体供给部,其通过台的气体供给孔供给气体,以辅助将载体与载物台分离。

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