公开(公告)号：US07321507B2

公开(公告)日：2008-01-22

申请号：US11284299

申请日：2005-11-21

Applicant: Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

Inventor： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC: G11C7/00

CPC classification number: G11C7/14 ,  G11C11/16

Abstract: An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

公开(公告)号：US20080001207A1

公开(公告)日：2008-01-03

申请号：US11476495

申请日：2006-06-28

Applicant: Yimin Guo ,  Po-Kang Wang

Inventor： Yimin Guo ,  Po-Kang Wang

IPC: H01L29/788

CPC classification number: H01L43/12 ,  G11C11/15 ,  H01L27/222

Abstract: The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

公开(公告)号：US20070012952A1

公开(公告)日：2007-01-18

申请号：US11182255

申请日：2005-07-15

Applicant: Yimin Guo ,  Po-Kang Wang

Inventor： Yimin Guo ,  Po-Kang Wang

IPC: H01L43/00 ,  H01L21/00

CPC classification number: H01L27/222 ,  G11C11/1675 ,  G11C11/1695

Abstract: A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

Abstract translation: 在主屏蔽层下方的第二屏蔽层被添加到分段的MRAM阵列。 图案化附加屏蔽，以便每位片提供一个屏蔽。 在这些分段屏蔽的端部处放置纵向偏置突片确保每个分段屏蔽是单个磁畴，使其作为防止非常小的杂散场的屏蔽非常有效。

公开(公告)号：US07123506B2

公开(公告)日：2006-10-17

申请号：US10860902

申请日：2004-06-03

Applicant: Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

Inventor： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.

Abstract translation: 公开了一种用于编程磁存储器的方法和系统。 该方法和系统还包括打开字线电流并打开位线电流。 字线电流用于产生至少一个硬轴字段。 位线电流用于产生至少一个易轴场。 在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。 另一方面，在位线电流关闭之后，字线电流被关断。

公开(公告)号：US20060227461A1

公开(公告)日：2006-10-12

申请号：US11447174

申请日：2006-06-06

Applicant: Yen Fu ,  Ellis Cha ,  Po-Kang Wang ,  Hong Tian ,  Manuel Hernandez ,  Yaw-Shing Tang ,  Ben Hu

Inventor： Yen Fu ,  Ellis Cha ,  Po-Kang Wang ,  Hong Tian ,  Manuel Hernandez ,  Yaw-Shing Tang ,  Ben Hu

IPC: G11B5/60

CPC classification number: H05K3/3442 ,  B24B37/00 ,  B24D18/00 ,  G11B5/4853 ,  H05K1/0215 ,  H05K2201/10727 ,  Y02P70/613

Abstract: Method and apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.

公开(公告)号：US20060012388A1

公开(公告)日：2006-01-19

申请号：US11176365

申请日：2005-07-08

Applicant: Ching-Lang Lin ,  Po-Kang Wang ,  I-Ru Liu

Inventor： Ching-Lang Lin ,  Po-Kang Wang ,  I-Ru Liu

IPC: G01R31/302 ,  G01M19/00 ,  H04Q5/22

CPC classification number: H04W24/00

Abstract: The present invention disclose a system and method for testing wireless devices, by which two wireless device-under-test (DUTs) is enabled to transmit and receive signal from each other such that the two DUTs can be test simultaneously for achieving the objects of reducing time consumed for testing a batch of DUTs and also reducing the amount of procedures required for cabling the DUTs to the test equipments of the test system.

Abstract translation: 本发明公开了一种用于测试无线设备的系统和方法，通过该系统和方法，两个无线测试设备（DUT）能够彼此发送和接收信号，使得两个DUT可以同时测试以实现减少的目的 测试一批DUT的时间消耗，同时也减少了将DUT布线到测试系统的测试设备所需的程序数量。

公开(公告)号：US20050276098A1

公开(公告)日：2005-12-15

申请号：US10865722

申请日：2004-06-09

Applicant: Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

Inventor： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

IPC: B01F15/02 ,  G11C11/00 ,  G11C11/16

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.

Abstract translation: 公开了一种用于提供包括与字线段相关联的磁存储单元的磁存储器的方法和系统。 磁存储单元包括磁存储装置和隔离装置。 隔离装置耦合到磁性隧道结，并具有用于读取和写入磁性存储器单元的组合字线。 磁存储装置和隔离装置被配置成使得在写入磁存储单元期间不存在直接到地面的地面路径。 一方面，在写入模式中，与字线段和字线段相关联的组合字线被激活。 在读取模式中，使用组合字线来选择与字线段相关联的至少一部分存储单元。

公开(公告)号：US06879474B2

公开(公告)日：2005-04-12

申请号：US10718878

申请日：2003-11-21

Applicant: Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

Inventor： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

IPC: G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

CPC classification number: B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

Abstract: The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

Abstract translation: 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

公开(公告)号：US06469875B1

公开(公告)日：2002-10-22

申请号：US09525672

申请日：2000-03-15

Applicant: Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

Inventor： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49048

Abstract: A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.

Abstract translation: 一种具有凹陷的共享极的缝合写头的结构和方法。 该方法包括在第一半共享极上形成底部线圈电介质层。 线圈形成在底部线圈电介质层上。 接下来，在第一半共享极（S2）上形成第二半共享极（P1）。 我们在结构上形成顶层线圈介电层。 在关键步骤中，我们化学机械抛光顶层线圈介电层。 写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。 在写间隙层上形成上极（P3）和硬掩模。 我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。

公开(公告)号：US06383574B1

公开(公告)日：2002-05-07

申请号：US09360118

申请日：1999-07-23

Applicant: Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

Inventor： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

IPC: B05D500

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/48 ,  G11B5/3163 ,  H01F41/302

Abstract: A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

Abstract translation: 形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。 然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。 该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。