公开(公告)号：US20050236619A1

公开(公告)日：2005-10-27

申请号：US11169932

申请日：2005-06-29

申请人： Vipulkumar Patel ,  Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine Yanushefski

发明人： Vipulkumar Patel ,  Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine Yanushefski

IPC分类号： H01L27/12 ,  H01L27/144 ,  H01L29/04

CPC分类号： H01L27/1443 ,  H01L27/1203

摘要： A conventional CMOS fabrication technique is used to integrate the formation of passive optical devices and active electro-optic devices with standard CMOS electrical devices on a common SOI structure. The electrical devices and optical devices share the same surface SOI layer (a relatively thin, single crystal silicon layer), with various required semiconductor layers then formed over the SOI layer. In some instances, a set of process steps may be used to simultaneously form regions in both electrical and optical devices. Advantageously, the same metallization process is used to provide electrical connections to the electrical devices and the active electro-optic devices.

公开(公告)号：US20050201683A1

公开(公告)日：2005-09-15

申请号：US11054205

申请日：2005-02-09

申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine Yanushefski

发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine Yanushefski

IPC分类号： G02B6/122 ,  G02B6/14 ,  G02B6/26 ,  G02B6/34 ,  G02B6/42

CPC分类号： G02B6/1228 ,  G02B6/4204

摘要： An arrangement for providing optical coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer of a silicon-on-insulator (SOI) structure includes a silicon nanotaper structure formed in the upper silicon layer (SOI layer) of the SOI structure and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer, with a refractive index greater than the index of the dielectric insulating layer but less than the refractive index of silicon, is disposed so as to overly a portion of the dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space propagating optical signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement (such as a prism or grating) is disposed over the dielectric waveguide coupling layer and used to couple a propagating optical signal between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.

摘要翻译： 用于在自由空间传播的光信号和形成在绝缘体上硅（SOI））结构的上硅层中的超薄硅波导之间提供光耦合的装置包括形成在上硅层（SOI层）中的硅纳米锥结构 ）和耦合到超薄硅波导。 具有大于介电绝缘层的折射率但小于硅的折射率的折射率的介质波导耦合层被布置成过度地在介电绝缘层的一部分中的相关部分 SOI层已被去除。 电介质波导耦合层的端部设置成与硅纳米锥的端部部分重叠以在自由空间传播的光信号和超薄硅波导之间形成模式转换区域。 自由空间光耦合装置（诸如棱镜或光栅）设置在介质波导耦合层之上，用于将传播的光信号耦合在自由空间与介质波导耦合层之间，然后耦合到超薄硅波导中。

公开(公告)号：US20060083144A1

公开(公告)日：2006-04-20

申请号：US11253456

申请日：2005-10-19

申请人： David Piede ,  Kalpendu Shastri ,  Robert Montgomery ,  Prakash Gothoskar ,  Vipulkumar Patel ,  Mary Nadeau

发明人： David Piede ,  Kalpendu Shastri ,  Robert Montgomery ,  Prakash Gothoskar ,  Vipulkumar Patel ,  Mary Nadeau

IPC分类号： G11B7/00

CPC分类号： G02F1/025 ,  G02B6/3586 ,  G02B6/3588 ,  G02B6/3594 ,  G02F1/0123 ,  G02F2201/58 ,  G02F2203/21

摘要： An improvement in the reliability and lifetime of SOI-based opto-electronic systems is provided through the use of a monolithic opto-electronic feedback arrangement that monitors one or more optical signals within the opto-electronic system and provides an electrical feedback signal to adjust the operation parameters of selected optical devices. For example, input signal coupling orientation may be controlled. Alternatively, the operation of an optical modulator, switch, filter, or attenuator may be under closed-loop feedback control by virtue of the inventive monolithic feedback arrangement. The feedback arrangement may also include a calibration/look-up table, coupled to the control electronics, to provide the baseline signals used to analyze the system's performance.

摘要翻译： 通过使用单片光电反馈装置来提供基​​于SOI的光电系统的可靠性和寿命的改进，该装置监测光电系统内的一个或多个光信号，并提供电反馈信号以调整 所选光器件的运行参数。 例如，可以控制输入信号耦合取向。 或者，光学调制器，开关，滤波器或衰减器的操作可以通过本发明的单片反馈装置进行闭环反馈控制。 反馈布置还可以包括耦合到控制电子器件的校准/查找表，以提供用于分析系统性能的基线信号。

公开(公告)号：US20070000862A1

公开(公告)日：2007-01-04

申请号：US11516217

申请日：2006-09-06

申请人： Vipulkumar Patel ,  Prakash Gothoskar ,  Robert Montgomery ,  Margaret Ghiron

发明人： Vipulkumar Patel ,  Prakash Gothoskar ,  Robert Montgomery ,  Margaret Ghiron

IPC分类号： B29D11/00 ,  C23F1/00 ,  B44C1/22

CPC分类号： G02F1/025

摘要： A method and structure for reducing optical signal loss in a silicon waveguide formed within a silicon-on-insulator (SOI) structure uses CMOS processing techniques to round the edges/corners of the silicon material along the extent of the waveguiding region. One exemplary set of processes utilizes an additional, sacrificial silicon layer that is subsequently etched to form silicon sidewall fillets along the optical waveguide, the fillets thus “rounding” the edges of the waveguide. Alternatively, the sacrificial silicon layer can be oxidized to consume a portion of the underlying silicon waveguide layer, also rounding the edges. Instead of using a sacrificial silicon layer, an oxidation-resistant layer may be patterned over a blanket silicon layer, the pattern defined to protect the optical waveguiding region. A thermal oxidation process is then used to convert the exposed portion of the silicon layer into silicon dioxide, forming a bird's beak structure at the edges of the silicon layer, thus defining the “rounded” edges of the silicon waveguiding structure.

摘要翻译： 用于减少在绝缘体上硅（SOI）结构中形成的硅波导中的光信号损耗的方法和结构使用CMOS处理技术来沿着波导区域的范围舍入硅材料的边缘/角。 一个示例性的工艺集合利用附加的牺牲硅层，其随后被蚀刻以沿着光波导形成硅侧壁圆角，因此圆角“波浪”了波导的边缘。 或者，牺牲硅层可以被氧化以消耗下面的硅波导层的一部分，也是边缘的四周。 代替使用牺牲硅层，可以在覆盖硅层上图案化抗氧化层，所述图案被限定为保护光波导区域。 然后使用热氧化工艺将硅层的暴露部分转化成二氧化硅，在硅层的边缘处形成鸟的喙结构，从而限定硅波导结构的“圆形”边缘。

公开(公告)号：US20050175286A1

公开(公告)日：2005-08-11

申请号：US10775872

申请日：2004-02-10

申请人： Vipulkumar Patel ,  Prakash Gothoskar ,  Robert Montgomery ,  Margaret Ghiron

发明人： Vipulkumar Patel ,  Prakash Gothoskar ,  Robert Montgomery ,  Margaret Ghiron

IPC分类号： G02B6/10 ,  G02B6/34 ,  G02B6/42

CPC分类号： G02B6/42 ,  G02B6/34 ,  G02B6/4214

摘要： Methods of forming a tapered evanescent coupling region for use with a relatively thin silicon optical waveguide formed with, for example, an SOI structure. A tapered evanescent coupling region is formed in a silicon substrate that is used as a coupling substrate, the coupling substrate thereafter joined to the SOI structure. A gray-scale photolithography process is used to define a tapered region in photoresist, the tapered pattern thereafter transferred into the silicon substrate. A material exhibiting a lower refractive index than the silicon optical waveguide layer (e.g., silicon dioxide) is then used to fill the tapered opening in the substrate. Advantageously, conventional silicon processing steps may be used to form coupling facets in the silicon substrate (i.e., angled surfaces, V-grooves) in an appropriate relation to the tapered evanescent coupling region. The coupling facets may be formed contiguous with the tapered evanescent coupling region, or formed through the opposing side of the silicon substrate.

摘要翻译： 形成锥形渐逝耦合区域的方法，用于与例如SOI结构形成的相对薄的硅光波导一起使用。 在用作耦合衬底的硅衬底中形成锥形渐逝耦合区，然后耦合衬底连接到SOI结构。 使用灰度光刻工艺来限定光致抗蚀剂中的锥形区域，此后的锥形图案转移到硅衬底中。 然后使用显示比硅光波导层（例如二氧化硅）低的折射率的材料来填充衬底中的锥形开口。 有利地，可以使用常规的硅处理步骤以与锥形渐逝耦合区域适当的关系在硅衬底（即成角度的表面，V形槽）中形成耦合面。 耦合面可以形成为与锥形渐逝耦合区域相邻，或者通过硅衬底的相对侧形成。

公开(公告)号：US20070280326A1

公开(公告)日：2007-12-06

申请号：US11637979

申请日：2006-12-13

申请人： David Piede ,  Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery

发明人： David Piede ,  Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery

IPC分类号： H01S3/10 ,  H01S3/08

CPC分类号： H01S5/141 ,  H01S5/06804 ,  H01S5/0687

摘要： An ECL laser structure utilizes an SOI-based grating structure coupled to the external gain medium to provide lasing activity. In contrast to conventional Bragg grating structures, the grating utilized in the ECL of the present invention is laterally displaced (i.e., offset) from the waveguide (in most cases, a rib or strip waveguide) comprising the laser cavity. The grating is formed in an area with higher contrast ratio between materials (silicon and oxide) and thus requires a lesser amount of optical energy to reflect the selected wavelength, and can easily be formed using well-known CMOS fabrication processes. The pitch of the grating (i.e., the spacing between adjacent grating elements) and the refractive index values of the grating materials determine the reflected wavelength (also referred to as the “center wavelength”). A thermally conductive strip is disposed alongside the grating to adjust/tune the center wavelength of the grating, where the application of an electric current to the thermally conductive strip will heat the strip and transfer this heat to the grating. The change of temperature of the grating will modify the refractive indexes of the grating materials and as a result change its center wavelength.

摘要翻译： ECL激光器结构利用耦合到外部增益介质的基于SOI的光栅结构来提供激光活动。 与传统的布拉格光栅结构相比，在本发明的ECL中使用的光栅从包括激光腔的波导（大多数情况下是肋或条形波导）横向移位（即偏移）。 光栅形成在材料（硅和氧化物）之间具有较高对比度的区域中，因此需要较少量的光能来反射所选择的波长，并且可以使用公知的CMOS制造工艺容易地形成。 光栅的间距（即相邻光栅元件之间的间距）和光栅材料的折射率值决定了反射波长（也称为“中心波长”）。 导热条沿光栅旁边设置以调整/调整光栅的中心波长，其中向导热带施加电流将加热带并将该热传递到光栅。 光栅的温度变化会改变光栅材料的折射率，从而改变其中心波长。

公开(公告)号：US20070274630A1

公开(公告)日：2007-11-29

申请号：US11652348

申请日：2007-01-11

申请人： Margaret Ghiron ,  Prakash Gothoskar ,  John Fangman ,  Robert Montgomery ,  Mary Nadeau

发明人： Margaret Ghiron ,  Prakash Gothoskar ,  John Fangman ,  Robert Montgomery ,  Mary Nadeau

IPC分类号： G02B6/26

CPC分类号： G02B6/4231

摘要： An arrangement for providing optical coupling into and out of a relatively thin silicon waveguide formed in the SOI layer of an SOI structure includes a lensing element and a defined reference surface within the SOI structure for providing optical coupling in an efficient manner. The input to the waveguide may come from an optical fiber or an optical transmitting device (laser). A similar coupling arrangement may be used between a thin silicon waveguide and an output fiber (either single mode fiber or multimode fiber).

摘要翻译： 用于在SOI结构的SOI层中形成的相对薄的硅波导提供光耦合的装置包括在SOI结构内的透镜元件和限定的参考表面，用于以有效的方式提供光耦合。 波导的输入可以来自光纤或光发射装置（激光）。 可以在薄硅波导和输出光纤（单模光纤或多模光纤）之间使用类似的耦合布置。

公开(公告)号：US20080089634A1

公开(公告)日：2008-04-17

申请号：US11973440

申请日：2007-10-09

申请人： Paulius Mosinskis ,  Robert Montgomery ,  Prakash Gothoskar

发明人： Paulius Mosinskis ,  Robert Montgomery ,  Prakash Gothoskar

IPC分类号： G02F1/035

CPC分类号： G02F1/2255 ,  G02F1/0121 ,  H04B10/5051 ,  H04B10/50575

摘要： An optical modulator is formed to include an adjustable drive arrangement for dynamically adjusting the effective length of the optical signals path(s) within the modulator. Each modulator arm is partitioned into a plurality of segments, with each segment coupled to a separate electrical signal driver. Therefore, the effective length of each modulator arm will be a function of the number of drivers that are activated for each arm at any given point in time. A feedback arrangement may be used with the plurality of drivers to dynamically adjust the operation of the modulator by measuring the extinction ratio as a function of optical power, turning “on” or “off” individual drivers accordingly.

摘要翻译： 光学调制器被形成为包括可调驱动装置，用于动态地调节调制器内的光信号路径的有效长度。 每个调制器臂被分割成多个段，每个段耦合到单独的电信号驱动器。 因此，每个调制器臂的有效长度将是在任何给定时间点为每个臂激活的驱动器的数量的函数。 反馈装置可以与多个驱动器一起使用，以通过测量作为光功率的函数的消光比来相应地“打开”或“关闭”个别驱动器来动态地调节调制器的操作。

公开(公告)号：US20070297709A1

公开(公告)日：2007-12-27

申请号：US11807959

申请日：2007-05-31

申请人： Robert Montgomery ,  Vipulkumar Patel

发明人： Robert Montgomery ,  Vipulkumar Patel

IPC分类号： G02F1/035

CPC分类号： G02F1/025 ,  G02F1/2257

摘要： The surface silicon layer (SOI layer) of an SOI-based optical modulator is processed to exhibit a corrugated surface along the direction of optical signal propagation. The required dielectric layer (i.e., relatively thin “gate oxide”) is formed over the corrugated structure in a manner that preserves the corrugated topology. A second silicon layer, required to form the modulator structure, is then formed over the gate oxide in a manner that follows the corrugated topology, where the overlapping portion of the corrugated SOI layer, gate oxide and second silicon layer defines the active region of the modulator. The utilization of the corrugated active region increases the area over which optical field intensity will overlap with the free carrier modulation region, improving the modulator's efficiency.

摘要翻译： 处理基于SOI的光调制器的表面硅层（SOI层）沿着光信号传播的方向呈现波纹状表面。 所需的电介质层（即相对较薄的“栅极氧化物”）以保持波纹拓扑的方式形成在波纹状结构上。 形成调制器结构所需的第二硅层然后以跟随波纹拓扑的方式形成在栅极氧化物上，其中波纹SOI层，栅极氧化物和第二硅层的重叠部分限定了 调制器。 波纹有源区域的利用增加了光场强度将与自由载波调制区域重叠的面积，从而提高了调制器的效率。

公开(公告)号：US08791525B2

公开(公告)日：2014-07-29

申请号：US12036718

申请日：2008-02-25

申请人： Robert Montgomery ,  Hugo Burke ,  Philip Parsonage ,  Susan Johns ,  David Paul Jones

发明人： Robert Montgomery ,  Hugo Burke ,  Philip Parsonage ,  Susan Johns ,  David Paul Jones

IPC分类号： H01L29/76

CPC分类号： H01L24/11 ,  H01L21/56 ,  H01L24/02 ,  H01L24/10 ,  H01L24/13 ,  H01L29/41775 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2224/0401 ,  H01L2224/11019 ,  H01L2224/11466 ,  H01L2224/11831 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05494 ,  H01L2924/13091 ,  H01L2924/00

摘要： A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.

摘要翻译： 一种功率半导体器件及其制造方法，其包括在其有源区上的薄金属层和厚金属层的堆叠。