公开(公告)号：US4633033A

公开(公告)日：1986-12-30

申请号：US699523

申请日：1985-02-08

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/0224 ,  H01L31/076 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022425 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes: a substrate having a semiconductor body disposed thereupon, a current collecting structure such as a bus-grid structure disposed upon the semiconductor body and a transparent conductive electrode overlying the semiconductor body and the current collecting structure. The photovoltaic device may also include a layer of low electrical conductivity material disposed beneath at least portions of the current collecting structure to prevent electrical contact between said structure and defective regions of the device occuring therebelow. Also disclosed are methods for the fabrication of the improved device.

摘要翻译： 具有增加的短路和分流缺陷容忍度的改进的光伏器件包括：具有设置在其上的半导体本体的基板，设置在半导体主体上的汇流栅格结构的集电结构和覆盖半导体本体的透明导电电极， 集电结构。 光伏器件还可以包括设置在集电结构的至少一部分下方的低导电性材料层，以防止所述结构与在其下发生的器件的缺陷区域之间的电接触。 还公开了用于制造改进的装置的方法。

公开(公告)号：US4586988A

公开(公告)日：1986-05-06

申请号：US524797

申请日：1983-08-19

申请人： Prem Nath ,  Bela Fischer

发明人： Prem Nath ,  Bela Fischer

IPC分类号： H01L31/04 ,  G09F9/35 ,  H01B13/00 ,  H01L21/288 ,  H01L31/0224 ,  H01L31/10 ,  H01L31/18 ,  C25D5/02

CPC分类号： H01L31/022466 ,  H01L31/022425 ,  H01L31/1884 ,  Y02E10/50

摘要： A method of depositing a preselected pattern of electrically conductive metallic material onto a layer of relatively transparent electrically conductive material. In its broadest form the method includes the single step of electroplating the electrically conductive metallic material onto the transparent conductive layer. The method has particular utility in electroplating metal grid patterns onto the indium tin oxide layer of an amorphous thin film photovoltaic device.

摘要翻译： 将导电金属材料的预选图案沉积到相对透明的导电材料层上的方法。 在其最广泛的形式中，该方法包括将导电金属材料电镀到透明导电层上的单步骤。 该方法在将金属网格图案电镀到非晶薄膜光伏器件的氧化铟锡层上具有特殊的用途。

公开(公告)号：US4532372A

公开(公告)日：1985-07-30

申请号：US564862

申请日：1983-12-23

申请人： Prem Nath ,  Masatsugu Izu

发明人： Prem Nath ,  Masatsugu Izu

IPC分类号： H01L31/0224 ,  H01L31/076 ,  H01L31/20 ,  H01L31/04

CPC分类号： H01L31/076 ,  H01L31/022425 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a magnesium fluoride based material. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.

摘要翻译： 一种改进的半导体器件，适于响应入射到其上的光能提供电流，包括第一电极，位于第一电极顶部的有源半导体本体，半导体本体顶部的第二电极，以及能够 提供用于装置电极之间的电流流动的低电阻分流路径。 该改进包括可操作地设置在半导体主体和该器件的一个电极之间的连续透明阻挡层（1），和（2）适于减小通过半导体器件的至少一个缺陷区域的电流的流动。 阻挡层由氟化镁基材料形成。 还公开了（1）制造改进的半导体器件的方法和（2）防止由于潜在棘爪引起的操作模式故障的方法。

公开(公告)号：US4485264A

公开(公告)日：1984-11-27

申请号：US440386

申请日：1982-11-09

申请人： Masatsugu Izu ,  Prem Nath

发明人： Masatsugu Izu ,  Prem Nath

IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/0216 ,  H01L31/042 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/206 ,  H01L31/02167 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521

摘要： Large area photovoltaic devices are defined by applying a pattern of electrically-insulating material directly atop the exposed surface of the semiconductor material. Methods of producing these photovoltaic devices in a continuous or batch process are also disclosed herein. Each large area device may include a matrix of electrically-isolated segments, each segment including a common substrate, a semiconductor body atop the substrate, and a transparent, electrically-conductive coating atop the semiconductor layer. Each large area photovoltaic device may include additionally or independently thereof, an electrically-inactive region also defined by the insulating material. The instant method of producing the photovoltaic devices eliminates the scribing steps required by prior art processes, while the product includes a boundary which separates the adjacent, electrically-isolated segments.

摘要翻译： 通过在半导体材料的暴露表面上直接施加电绝缘材料的图案来限定大面积光伏器件。 本文还公开了以连续或间歇方法生产这些光伏器件的方法。 每个大面积器件可以包括电隔离段的矩阵，每个段包括公共衬底，在衬底顶部的半导体本体，以及位于半导体层顶部的透明导电涂层。 每个大面积光伏器件可以额外地或独立地包括也由绝缘材料限定的电非活性区域。 制造光伏器件的即时方法消除了现有技术方法所需的划线步骤，而产品包括分隔相邻的电隔离段的边界。

公开(公告)号：US4461239A

公开(公告)日：1984-07-24

申请号：US403417

申请日：1982-07-30

申请人： Vincent D. Cannella ,  Prem Nath ,  Robert J. Shuman

发明人： Vincent D. Cannella ,  Prem Nath ,  Robert J. Shuman

IPC分类号： H01L31/04 ,  H01J37/32 ,  H01L21/205 ,  H05H1/46 ,  C23C13/10

CPC分类号： H01J37/32082 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/3277 ,  H05H1/46 ,  H01J2237/3325

摘要： A reduced capacitance electrode assembly for use in an alternating current plasma system provides reduced input capacitance to an associated tuning network. The assembly includes an electrode adapted to receive alternating current power for maintaining a plasma region and a plurality of electrically conductive plates. The plates are closely spaced apart by less than a predetermined distance on one side of the electrode for precluding the formation of a plasma region on the one side of the electrode and for providing a plurality of series capacitances to present a substantially reduced capacitance to the alternating current power.The reduced capacitance electrode assembly is particularly useful in a system for making photovoltaic devices wherein a plurality of amorphous semiconductor materials is deposited onto a continuous conductive substrate moving through a corresponding plurality of deposition chambers. At least one of the chambers includes a reduced capacitance electrode assembly comprising an electrode spaced from the substrate adapted to receive alternating current power for establishing a plasma between the electrode and the substrate, and a plurality of electrically conductive plates being closely spaced apart on the side of the electrode opposite the substrate for confining the plasma between the electrode and the substrate and for providing a plurality of series coupled capacitances to present a substantially reduced capacitance to the alternating current power.

摘要翻译： 用于交流等离子体系统的减小电容电极组件为相关联的调谐网络提供降低的输入电容。 组件包括适于接收用于维持等离子体区域和多个导电板的交流电力的电极。 这些板在电极的一侧上紧密地间隔小于预定距离，以阻止在电极的一侧上形成等离子体区域，并提供多个串联电容，以向交替的电流呈现基本上减小的电容 当前的权力。 减小电容电极组件在用于制造光伏器件的系统中特别有用，其中多个非晶半导体材料沉积到移动通过相应的多个沉积室的连续导电衬底上。 所述腔室中的至少一个包括减小电容电极组件，其包括与所述衬底间隔开的电极，所述电极适于接收用于在所述电极和所述衬底之间建立等离子体的交流电力，以及在所述电极和所述衬底之间紧密间隔开的多个导电板 所述电极与所述衬底相对，用于将所述等离子体限制在所述电极和所述衬底之间，并且用于提供多个串联耦合电容以向所述交流电力呈现基本上减小的电容。

公开(公告)号：US4423701A

公开(公告)日：1984-01-03

申请号：US363256

申请日：1982-03-29

申请人： Prem Nath ,  David A. Gattuso

发明人： Prem Nath ,  David A. Gattuso

IPC分类号： C23C16/50 ,  C23C16/505 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31 ,  C23C13/08 ,  H01L45/00

CPC分类号： H01L21/67115 ,  C23C16/505 ,  H01J37/32018

摘要： An improved glow discharge deposition apparatus for depositing amorphous layers upon at least one substrate, the apparatus including a housing capable of withstanding vacuum pressures, a substrate upon which the amorphous layers are deposited, an r.f. powered cathode adapted to cooperate with the substrate for producing a plasma region in the housing, layer-producing materials adapted to be introduced into the plasma region, and heating elements for warming the substrate to a deposition-effecting temperature. The improvement is provided by an electrically insulated base adapted to support the cathode in a non-horizontal, preferably a vertical, plane and a prop adapted to support the substrate in a plane adjacent and parallel to the non-horizontal plane in which the cathode is supported. The non-horizontal cathode is adapted for use either in a single deposition chamber for depositing a single amorphous layer onto the substrate, or in a machine having a plurality of successive deposition chambers for depositing successive amorphous layers onto the substrate. In either embodiment, opposite planar faces of the cathode may be employed in combination with a pair of substrates, deposed in planes parallel to the plane of the cathode faces, to develop two plasma regions for simultaneously depositing amorphous layer-producing material on each of the substrates. The substrate can be formed either of discrete plates or of a continuous web of material. In the embodiment wherein the substrate is formed of discrete plates, a rotatable arm, associated with each deposition chamber, is adapted to cyclically introduce the substrate into the deposition chamber and expel the substrate from the deposition chamber.

摘要翻译： 一种改进的辉光放电沉积设备，用于在至少一个衬底上沉积非晶层，该器件包括能够承受真空压力的壳体，沉积非晶层的衬底，r.f. 所述阴极适于与所述基板配合以在所述壳体中产生等离子体区域，适于引入所述等离子体区域的产生层的材料以及用于将所述基板加热至沉积效应温度的加热元件。 该改进由适于将阴极支撑在非水平的，优选垂直的平面中的电绝缘基座和适于将基板支撑在与非水平面相邻并平行的平面中的支撑件，其中阴极为 支持的。 非水平阴极适于在单个沉积室中使用，以将单个非晶层沉积到衬底上，或者在具有多个连续沉积室的机器中使用，以将连续的无定形层沉积到衬底上。 在任一实施例中，阴极的相对的平面可以与放置在平行于阴极面的平面的平面中的一对基板组合使用，以形成两个等离子体区域，用于同时在其中的每一个上沉积非晶层产生材料 底物。 衬底可以由离散板或连续的材料网形成。 在其中衬底由分立板形成的实施例中，与每个沉积室相关联的可旋转臂适于将衬底循环地引入沉积室并从沉积室排出衬底。

公开(公告)号：US08465589B1

公开(公告)日：2013-06-18

申请号：US12701449

申请日：2010-02-05

申请人： Prem Nath ,  Venugopala R. Basava ,  Ajay Kumar Kalla ,  Peter Alex Shevchuk ,  Mohan S. Misra

发明人： Prem Nath ,  Venugopala R. Basava ,  Ajay Kumar Kalla ,  Peter Alex Shevchuk ,  Mohan S. Misra

IPC分类号： C23C16/00

CPC分类号： H01L21/67173 ,  C23C14/0623 ,  C23C14/562 ,  C23C14/568 ,  H01L21/67236 ,  H01L21/6776

摘要： A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.

摘要翻译： CIGS光伏电池和模块的制造方法包括将铜铟镓硒化合物顺序沉积在多个薄的子层中以形成具有比每个子层的厚度大的期望厚度的复合CIGS吸收层。 在一个实施例中，该方法适用于CIGS PV电池的卷对卷处理。 在一个实施方案中，该方法适于制备具有通过该层具有分级组成的CIGS吸收层。 在一个具体实施方案中，分级组合物在该层的底部富含铜。 在一个实施方案中，通过共同蒸发铜，铟，镓和硒沉积每个CIGS子层，其原位反应以形成CIGS。

公开(公告)号：US08021905B1

公开(公告)日：2011-09-20

申请号：US12771590

申请日：2010-04-30

申请人： Prem Nath ,  Venugopala R. Basava ,  Ajay Kumar Kalla ,  Peter Alex Shevchuk ,  Mohan S. Misra

发明人： Prem Nath ,  Venugopala R. Basava ,  Ajay Kumar Kalla ,  Peter Alex Shevchuk ,  Mohan S. Misra

IPC分类号： H01L21/00

CPC分类号： H01L21/67173 ,  C23C14/0623 ,  C23C14/562 ,  C23C14/568 ,  H01L21/67236 ,  H01L21/6776

摘要： A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.

摘要翻译： CIGS光伏电池和模块的制造方法包括将铜铟镓硒化合物顺序沉积在多个薄的子层中以形成具有比每个子层的厚度大的期望厚度的复合CIGS吸收层。 在一个实施例中，该方法适用于CIGS PV电池的卷对卷处理。 在一个实施方案中，该方法适于制备具有通过该层具有分级组成的CIGS吸收层。 在一个具体实施方案中，分级组合物在该层的底部富含铜。 在一个实施方案中，通过共同蒸发铜，铟，镓和硒沉积每个CIGS子层，其原位反应以形成CIGS。

公开(公告)号：US5968287A

公开(公告)日：1999-10-19

申请号：US858033

申请日：1997-05-16

申请人： Prem Nath

发明人： Prem Nath

IPC分类号： E04D13/18 ,  H01L31/048

CPC分类号： H01L31/048 ,  H02S20/23 ,  Y02B10/12 ,  Y02B10/22 ,  Y02E10/50

摘要： A photovoltaic building structure comprises a number of interlockable building panels having photovoltaic generator devices supported thereupon. The photovoltaic devices may be attached to the panels by a vacuum lamination process in which a flexible, air impermeable membrane covers a stack of layers being laminated to the panel. Evacuation of air from between the membrane and panel causes the lamination stack to be compressed against the panel, and a pressure and/or heat activatable adhesive is employed to adhere the various layers to the panel. Installation of the panels is in accord with standard building techniques, and the presence of the photovoltaic generators does not change the mechanical characteristics of the panels.

摘要翻译： 光伏建筑结构包括许多可互锁的建筑物面板，其中支撑有光伏发电机装置。 光伏器件可以通过真空层压工艺附着到面板上，其中柔性的不透气膜覆盖层压到面板上的一叠层。 从膜和面板之间排出的空气导致层压叠层压靠面板，并且使用压力和/或热可活化的粘合剂将各种层粘附到面板上。 面板的安装符合标准的建筑技术，光伏发电机的存在不会改变面板的机械特性。

公开(公告)号：US5110370A

公开(公告)日：1992-05-05

申请号：US585661

申请日：1990-09-20

申请人： Craig Vogeli ,  Prem Nath

发明人： Craig Vogeli ,  Prem Nath

IPC分类号： H01L31/042 ,  H01L31/048 ,  H01L31/052

CPC分类号： H01L31/048 ,  H01L31/0543 ,  H01L31/0547 ,  Y02E10/52

摘要： A photovoltaic cell includes a light-directing optical element integrally formed in an encapsulant layer thereof in the region of opaque current-collecting gridlines.The optical element redirects light which would be absorbed by the opaque structure to other regions of the photovoltaic device, thereby decreasing shading effects.

摘要翻译： 光伏电池包括在不透明电流收集网格线的区域中整体地形成在其密封剂层中的导光光学元件。光学元件将将被不透明结构吸收的光重定向到光伏器件的其它区域，从而减少 阴影效果。