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    OPTICAL SEMICONDUCTOR DEVICE
    12.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE 有权
    光学半导体器件

    公开(公告)号：US20160056115A1

    公开(公告)日：2016-02-25

    申请号：US14827841

    申请日：2015-08-17

    Applicant: Renesas Electronics Corporation

    Inventor： Hiroyuki Kunishima ,  Yasutaka Nakashiba ,  Masaru Wakabayashi ,  Shinichi Watanuki ,  Ken Ozawa ,  Tatsuya Usami ,  Yoshiaki Yamamoto ,  Keiji Sakamoto

    IPC: H01L23/60 ,  H05K1/02

    CPC classification number: H01L23/60 ,  G02B6/43 ,  G02F1/0121 ,  G02F1/025 ,  G02F2201/12 ,  G02F2202/105 ,  H01L31/02002 ,  H01L2924/0002 ,  H05K1/0296 ,  H01L2924/00

    Abstract: A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.

    Abstract translation: 提供了可以防止电信号在光半导体器件中劣化的技术。 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。

    Semiconductor device and manufacturing method thereof
    14.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US10553734B2

    公开(公告)日：2020-02-04

    申请号：US15980661

    申请日：2018-05-15

    Applicant: Renesas Electronics Corporation

    Inventor： Teruhiro Kuwajima ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama

    IPC: H01L31/02 ,  H01L31/028 ,  H01L31/18 ,  H01L23/48 ,  H01L23/522 ,  H01L31/024 ,  H01L31/0232 ,  H01L31/0352 ,  H01L27/12 ,  G02B6/122 ,  G02F1/025 ,  G02B6/43

    Abstract: An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-layer body including an n-type semiconductor portion and a cap layer is formed. Over a first interlayer insulating film covering the optical waveguide, the p-type semiconductor portion, and the multi-layer body, a heater located over the optical waveguide is formed. In the first interlayer insulating film, first and second contact holes are formed. A first contact portion electrically coupled with the p-type semiconductor portion is formed continuously in the first contact hole and over the first interlayer insulating film. A second contact portion electrically coupled with the cap layer is formed continuously in the second contact hole and over the first interlayer insulating film. A wire formed over a second interlayer insulating film is electrically coupled with the heater and the first and second contact portions via plugs embedded in the second interlayer insulating film.

    Semiconductor device and method of manufacturing the same
    15.
    发明授权
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：US10466415B2

    公开(公告)日：2019-11-05

    申请号：US15961435

    申请日：2018-04-24

    Applicant: Renesas Electronics Corporation

    Inventor： Yasutaka Nakashiba ,  Shinichi Watanuki

    IPC: G02B6/12 ,  G02B6/122 ,  G02B6/124 ,  G02B6/136 ,  G02F1/025 ,  G02B6/34

    Abstract: A semiconductor device including an optical waveguide and a p-type semiconductor portion is configured as follows. The optical waveguide includes: a first semiconductor layer formed on an insulating layer; an insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the insulating layer. The p-type semiconductor portion includes the first semiconductor layer. The film thickness of the p-type semiconductor portion is smaller than that of the optical waveguide. By forming the insulating layer between the first semiconductor layer and the second semiconductor layer, control of the film thicknesses of the optical waveguide and the p-type semiconductor portion is facilitated. Specifically, when the unnecessary second semiconductor layer is removed by etching in a step of forming the p-type semiconductor portion, the insulating layer which is the lower layer functions as an etching stopper, and the film thickness of the p-type semiconductor portion can be easily adjusted.

    Germanium-based photoreceiver having tungsten contacts
    16.
    发明授权
    Germanium-based photoreceiver having tungsten contacts 有权

    公开(公告)号：US10355161B2

    公开(公告)日：2019-07-16

    申请号：US15703525

    申请日：2017-09-13

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Teruhiro Kuwajima ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama

    IPC: H01L31/18 ,  H01L31/028 ,  H01L31/105 ,  H01L31/0224

    Abstract: To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed. The coupling hole has, on the inner wall thereof, a barrier metal film and the barrier metal film has thereon a first-layer wiring made of a tungsten film. Tungsten hardly diffuses from the tungsten film into the i type germanium layer even when a thermal stress is applied, making it possible to prevent the resulting germanium photoreceiver from having diode characteristics deteriorated by the thermal stress.

    Semiconductor device having quadrangular interposer with functional blocks having arranged regions and waveguides
    17.
    发明授权
    Semiconductor device having quadrangular interposer with functional blocks having arranged regions and waveguides 有权

    公开(公告)号：US10025048B2

    公开(公告)日：2018-07-17

    申请号：US15648214

    申请日：2017-07-12

    Applicant: Renesas Electronics Corporation

    Inventor： Shinichi Watanuki ,  Yasutaka Nakashiba

    IPC: G02B6/42 ,  G02B6/43 ,  G02B6/12

    Abstract: An interposer includes a plurality of identical functional blocks arranged in the x direction, for example, and the functional blocks include a first region mounting a semiconductor chip, a second region mounting a light emitting element chip, a third region mounting a light receiving element chip, and a plurality of silicon waveguides. Then, the second and third regions are arranged between the first region and a first side along the x direction of the interposer. In addition, the plurality of silicon waveguides are arranged between the second region and the first side, and between the third region and the first side, extending from the second region toward the first side and from the third region toward the first side and are not formed between the functional blocks adjacent in the x direction.

    Semiconductor device having quadrangular interposer with plural functional blocks having arranged regions
    19.
    发明授权
    Semiconductor device having quadrangular interposer with plural functional blocks having arranged regions 有权

    公开(公告)号：US09739964B2

    公开(公告)日：2017-08-22

    申请号：US15186528

    申请日：2016-06-19

    Applicant: Renesas Electronics Corporation

    Inventor： Shinichi Watanuki ,  Yasutaka Nakashiba

    IPC: G02B6/42 ,  G02B6/43 ,  G02B6/12

    CPC classification number: G02B6/428 ,  G02B6/43 ,  G02B2006/12061

    Abstract: An interposer includes a plurality of identical functional blocks arranged in the x direction, for example, and the functional blocks include a first region mounting a semiconductor chip, a second region mounting a light emitting element chip, a third region mounting a light receiving element chip, and a plurality of silicon waveguides. Then, the second and third regions are arranged between the first region and a first side along the x direction of the interposer. In addition, the plurality of silicon waveguides are arranged between the second region and the first side, and between the third region and the first side, extending from the second region toward the first side and from the third region toward the first side and are not formed between the functional blocks adjacent in the x direction.

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