公开(公告)号：US09722552B2

公开(公告)日：2017-08-01

申请号：US14790096

申请日：2015-07-02

Applicant: RF Micro Devices, Inc.

Inventor： Kevin Wesley Kobayashi

IPC: H03F1/34 ,  H03F3/193 ,  H04L5/14 ,  H03F3/24 ,  H03F3/343 ,  H03F3/345

CPC classification number: H03F3/193 ,  H03F1/342 ,  H03F3/245 ,  H03F3/3435 ,  H03F3/345 ,  H03F3/3455 ,  H03F2200/129 ,  H03F2200/18 ,  H03F2200/333 ,  H03F2200/451 ,  H03F2200/63 ,  H03F2200/93 ,  H04L5/1461

Abstract: A circuit that includes a Darlington transistor pair having an input transistor and an output transistor configured to generate an output signal at an output node in response to an input signal received through an input node is disclosed. The circuit has a feedback coupling network coupled between the output node and the input node for feeding back to the input node a portion of an amplified version of the input signal that passes through the input transistor. The circuit further includes a bias feedback network that includes a bias transistor and a resistive network that consists of only resistive elements such that no inductors and no capacitors are provided within the bias feedback network.

公开(公告)号：US09564497B2

公开(公告)日：2017-02-07

申请号：US14749274

申请日：2015-06-24

Applicant: RF Micro Devices, Inc.

Inventor： Kevin Wesley Kobayashi ,  Haldane S. Henry ,  Andrew P. Ritenour

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/812 ,  H01L29/417 ,  H01L29/778 ,  H01L29/20 ,  H01L29/80 ,  H01L29/16

CPC classification number: H01L29/402 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/7787 ,  H01L29/80 ,  H01L29/812

Abstract: A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. Another embodiment includes at least one source field plate integral with the at least one source finger. The at least one source field plate extends over the at least one gate finger that includes a portion outside of the active region. Either embodiment can also include a sloped gate foot to further improve high voltage operation.

Abstract translation: 公开了具有至少一种结构的场效应晶体管，其被配置为重新分布和/或减少栅极指末端的电场。 场效应晶体管的实施例包括基板，设置在基板上的有源区，与有源区接触的至少一个源极指，与有源区接触的至少一个漏极指，以及整流中的至少一个栅极指 与活动区域接触。 一个实施例具有至少一个门指的至少一端延伸到有源区的外部。 另一个实施例包括与所述至少一个源手指成一体的至少一个源极场板。 所述至少一个源极场板在所述至少一个栅极指状物上延伸，所述至少一个栅极指包括有源区域外部的部分。 任何一个实施例还可以包括倾斜门脚，以进一步改善高压操作。

公开(公告)号：US09325281B2

公开(公告)日：2016-04-26

申请号：US14067019

申请日：2013-10-30

Applicant: RF Micro Devices, Inc.

Inventor： Chris Levesque ,  Kevin Wesley Kobayashi ,  Praveen Varma Nadimpalli ,  Ricke W. Clark

IPC: H03F3/21 ,  H03F1/52 ,  H03F1/30 ,  H03F3/193 ,  H03G3/30 ,  H03F3/72

CPC classification number: H03F3/21 ,  H03F1/305 ,  H03F1/523 ,  H03F3/193 ,  H03F3/72 ,  H03F2200/18 ,  H03F2200/468 ,  H03F2203/45284 ,  H03G3/3042

Abstract: The present disclosure provides a power amplifier controller for starting up, operating, and shutting down a power amplifier. The power amplifier controller includes current sense amplifier circuitry adapted to monitor a main current of the power amplifier. A bias generator is also included and adapted to provide a predetermined standby bias voltage and an operational bias voltage based upon a main current level sensed by the current sense amplifier circuitry. The power amplifier controller further includes a sequencer adapted to control startup and shutdown sequences of the power amplifier. In at least one embodiment, the power amplifier is a gallium nitride (GaN) device, and the main current level sensed is a drain current of the GaN device. Moreover, the bias generator is a gate bias generator provided that the power amplifier is a field effect transistor (FET) device.

Abstract translation: 本公开提供了用于启动，操作和关闭功率放大器的功率放大器控制器。 功率放大器控制器包括适于监视功率放大器的主电流的电流检测放大器电路。 还包括偏置发生器并且适于基于由电流感测放大器电路感测的主电流电平提供预定待机偏置电压和操作偏置电压。 功率放大器控制器还包括适于控制功率放大器的启动和关闭序列的定序器。 在至少一个实施例中，功率放大器是氮化镓（GaN）器件，并且感测到的主电流电平是GaN器件的漏极电流。 此外，偏置发生器是栅极偏置发生器，其中功率放大器是场效应晶体管（FET）器件。

公开(公告)号：US20150214909A1

公开(公告)日：2015-07-30

申请号：US14606375

申请日：2015-01-27

Applicant: RF Micro Devices, Inc.

Inventor： Kevin Wesley Kobayashi

IPC: H03F3/21 ,  H03F1/32 ,  H03F1/56 ,  H03F3/19

CPC classification number: H03F1/56 ,  H03F1/0261 ,  H03F1/32 ,  H03F1/565 ,  H03F3/602 ,  H03F2200/192 ,  H03F2200/198 ,  H03F2200/204 ,  H03F2201/3215

Abstract: An unbalanced linear power amplifier (PA) is disclosed having a quadrature coupler with a 90° phase input port, a 0° phase input port, an output termination port, and a signal output port. Each of the 90° phase input port, the 0° phase input port, the output termination port, and the signal output port have a characteristic resistance (Ro). Also included is a first PA having an output coupled to a 90° phase input port of the quadrature coupler and a second PA having an output coupled to a 0° phase input port of the quadrature coupler. Biasing circuitry provides the first PA and the second PA with a similar gain. A tuning network is coupled between the output termination port and ground. The tuning network has an isolation resistance in series with an isolation inductance, wherein the isolation resistance is between about 0.02*Ro Ω and 0.8*Ro Ω.

Abstract translation: 公开了一种具有90°相位输入端口，0°相位输入端口，输出端接端口和信号输出端口的正交耦合器的不平衡线性功率放大器（PA）。 90°相位输入端口，0°相位输入端口，输出端接端口和信号输出端口均具有特性电阻（Ro）。 还包括具有耦合到正交耦合器的90°相位输入端口的输出的第一PA和具有耦合到正交耦合器的0°相位输入端口的输出的第二PA。 偏置电路为第一个PA和第二个PA提供了类似的增益。 调谐网络耦合在输出终端端口和地之间。 调谐网络具有与隔离电感串联的隔离电阻，其中隔离电阻介于约0.02 * Ro＆OHgr之间; 和0.8 * Ro＆OHgr;

公开(公告)号：US09093420B2

公开(公告)日：2015-07-28

申请号：US13795986

申请日：2013-03-12

Applicant: RF Micro Devices, Inc.

Inventor： Kevin Wesley Kobayashi ,  Haldane S. Henry ,  Andrew P. Ritenour

IPC: H01L21/84 ,  H01L29/423 ,  H01L29/812 ,  H01L29/66 ,  H01L29/40 ,  H01L29/417 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/402 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/7787 ,  H01L29/80 ,  H01L29/812

Abstract: Methods for fabricating a field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends are disclosed. The methods provide field effect transistors that each include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. At least one method includes etching at least one gate channel into the passivation layer with a predetermined slope that reduces electric fields at a gate edge. Other methods include steps for fabricating a sloped gate foot, a round end, and/or a chamfered end to further improve high voltage operation.

Abstract translation: 公开了制造具有至少一种结构的场效应晶体管的方法，该结构被配置为重新分布和/或减少栅极指末端的电场。 这些方法提供场效应晶体管，其各自包括衬底，设置在衬底上的有源区，与有源区接触的至少一个源极指，与有源区接触的至少一个漏极指，以及至少一个栅极指 与活性区域整流接触。 一个实施例具有至少一个门指的至少一端延伸到有源区的外部。 至少一种方法包括以预定斜率将至少一个栅极通道蚀刻到钝化层中，该斜率减小栅极边缘处的电场。 其他方法包括用于制造倾斜门脚，圆端和/或倒角端的步骤，以进一步改善高压操作。

公开(公告)号：US20150091653A1

公开(公告)日：2015-04-02

申请号：US14501453

申请日：2014-09-30

Applicant: RF Micro Devices, Inc.

Inventor： Kevin Wesley Kobayashi ,  Hamhee Jeon

IPC: H03F3/21 ,  H03F1/02 ,  H03F3/19

CPC classification number: H03F1/0288 ,  H03F1/0233 ,  H03F1/3247 ,  H03F1/56 ,  H03F3/19 ,  H03F3/193 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/192 ,  H03F2200/204 ,  H03F2200/36 ,  H03F2200/451

Abstract: A reconfigurable load modulation amplifier having a carrier amplifier and a peak amplifier that are coupled in parallel is disclosed. The peak amplifier provides additional power amplification when the carrier amplifier is driven into saturation. A quadrature coupler coupled between the carrier amplifier and the peak amplifier is configured to combine power from both the carrier amplifier and the peak amplifier for output through an output load terminal. The reconfigurable load modulation amplifier further includes control circuitry coupled to an isolation port of the quadrature coupler and configured to provide adjustable impedance at the isolation port of the quadrature coupler. As such, impedance at the isolation port of the quadrature coupler is tunable such that at least a carrier or peak amplifier is presented with a quadrature coupler load impedance that ranges from around about half an output load termination impedance to around about twice the output load termination impedance.

Abstract translation: 公开了具有并联耦合的载波放大器和峰值放大器的可重构负载调制放大器。 当载波放大器被驱动到饱和时，峰值放大器提供额外的功率放大。 耦合在载波放大器和峰值放大器之间的正交耦合器被配置为组合来自载波放大器和峰值放大器的功率，用于通过输出负载端子输出。 可重构负载调制放大器还包括耦合到正交耦合器的隔离端口并被配置为在正交耦合器的隔离端口处提供可调阻抗的控制电路。 因此，正交耦合器的隔离端口处的阻抗是可调谐的，使得至少一个载波或峰值放大器呈现正交耦合器负载阻抗，该阻抗的大约约一半的输出负载终端阻抗到大约两倍的输出负载终端 阻抗。

公开(公告)号：US09484865B2

公开(公告)日：2016-11-01

申请号：US14501453

申请日：2014-09-30

Applicant: RF Micro Devices, Inc.

Inventor： Kevin Wesley Kobayashi ,  Hamhee Jeon

IPC: H03F3/21 ,  H03F1/02 ,  H03F3/19 ,  H03F1/56 ,  H03F3/193

CPC classification number: H03F1/0288 ,  H03F1/0233 ,  H03F1/3247 ,  H03F1/56 ,  H03F3/19 ,  H03F3/193 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/192 ,  H03F2200/204 ,  H03F2200/36 ,  H03F2200/451

Abstract: A reconfigurable load modulation amplifier having a carrier amplifier and a peak amplifier that are coupled in parallel is disclosed. The peak amplifier provides additional power amplification when the carrier amplifier is driven into saturation. A quadrature coupler coupled between the carrier amplifier and the peak amplifier is configured to combine power from both the carrier amplifier and the peak amplifier for output through an output load terminal. The reconfigurable load modulation amplifier further includes control circuitry coupled to an isolation port of the quadrature coupler and configured to provide adjustable impedance at the isolation port of the quadrature coupler. As such, impedance at the isolation port of the quadrature coupler is tunable such that at least a carrier or peak amplifier is presented with a quadrature coupler load impedance that ranges from around about half an output load termination impedance to around about twice the output load termination impedance.

Abstract translation: 公开了具有并联耦合的载波放大器和峰值放大器的可重构负载调制放大器。 当载波放大器被驱动到饱和时，峰值放大器提供额外的功率放大。 耦合在载波放大器和峰值放大器之间的正交耦合器被配置为组合来自载波放大器和峰值放大器的功率，用于通过输出负载端子输出。 可重构负载调制放大器还包括耦合到正交耦合器的隔离端口并被配置为在正交耦合器的隔离端口处提供可调阻抗的控制电路。 因此，正交耦合器的隔离端口处的阻抗是可调谐的，使得至少一个载波或峰值放大器呈现正交耦合器负载阻抗，该阻抗的大约约一半的输出负载终端阻抗到大约两倍的输出负载终端 阻抗。

公开(公告)号：US09431969B2

公开(公告)日：2016-08-30

申请号：US14103089

申请日：2013-12-11

Applicant: RF Micro Devices, Inc.

Inventor： Hamhee Jeon ,  Kevin Wesley Kobayashi

IPC: H03F1/07 ,  H03F1/02 ,  H03F3/195

CPC classification number: H03F1/0288 ,  H03F3/195

Abstract: Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit is configured to tune the tunable impedance of the tunable impedance load at the isolation port dynamically as a function of the RF power of the Doherty amplification circuit. In this manner, the control circuit can provide dynamic load modulation, thereby increasing the power efficiency of the Doherty amplification circuit, particularly at backed-off power levels. The load modulation provided by the control circuit also allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.

Abstract translation: 公开了包括Doherty放大电路和控制电路的射频（RF）放大器件及其操作方法。 在一个实施例中，Doherty放大电路包括正交耦合器，其具有耦合到隔离端口并被配置为提供可调谐阻抗的隔离端口和可调阻抗负载。 控制电路被配置为根据Doherty放大电路的RF功率动态地调节隔离端口处的可调谐阻抗负载的可调谐阻抗。 以这种方式，控制电路可以提供动态负载调制，从而提高了Doherty放大电路的功率效率，特别是在退避功率电平方面。 由控制电路提供的负载调制还允许Doherty放大电路在各种RF通信频带中提供宽带放大。

公开(公告)号：US09397617B2

公开(公告)日：2016-07-19

申请号：US14314357

申请日：2014-06-25

Applicant: RF Micro Devices, Inc.

Inventor： Hamhee Jeon ,  Kevin Wesley Kobayashi

IPC: H03F1/07 ,  H03F3/191 ,  H03F1/02 ,  H03F1/42 ,  H03F3/60

CPC classification number: H03F1/0288 ,  H03F1/42 ,  H03F1/56 ,  H03F3/19 ,  H03F3/602 ,  H03F2200/36 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2203/21139

Abstract: Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and methods of operating the same. In one embodiment, a Doherty amplification circuit includes a main carrier RF amplifier, a peaking RF amplifier, and a periodic quadrature coupler. To provide Doherty amplification, the peaking RF amplifier is configured to be deactivated while an RF signal is below a threshold level and is configured to be activated while the RF signal is above the threshold level. The periodic quadrature coupler is configured to combine a first RF split signal from the main carrier RF amplifier and a second RF split signal from the peaking RF amplifier into the RF signal, such that the RF signal is output from an output port while the peaking RF amplifier is activated. The periodic quadrature coupler allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.

Abstract translation: 公开了包括Doherty放大电路和其操作方法的射频（RF）放大器件。 在一个实施例中，Doherty放大电路包括主载波RF放大器，峰化RF放大器和周期性正交耦合器。 为了提供Doherty放大，峰值RF放大器被配置为在RF信号低于阈值电平时被去激活，并且被配置为在RF信号高于阈值电平时被激活。 周期性正交耦合器被配置为将来自主载波RF放大器的第一RF分离信号和来自峰值RF放大器的第二RF分离信号组合成RF信号，使得RF信号从输出端口输出，而峰值RF 放大器被激活。 周期性正交耦合器允许Doherty放大电路在各种RF通信频带中提供宽带放大。

公开(公告)号：US20150295053A1

公开(公告)日：2015-10-15

申请号：US14749274

申请日：2015-06-24

Applicant: RF Micro Devices, Inc.

Inventor： Kevin Wesley Kobayashi ,  Haldane S. Henry ,  Andrew P. Ritenour

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/80 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/402 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/7787 ,  H01L29/80 ,  H01L29/812

Abstract: A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. Another embodiment includes at least one source field plate integral with the at least one source finger. The at least one source field plate extends over the at least one gate finger that includes a portion outside of the active region. Either embodiment can also include a sloped gate foot to further improve high voltage operation.

Abstract translation: 公开了具有至少一种结构的场效应晶体管，其被配置为重新分布和/或减少栅极指末端的电场。 场效应晶体管的实施例包括基板，设置在基板上的有源区，与有源区接触的至少一个源极指，与有源区接触的至少一个漏极指，以及整流中的至少一个栅极指 与活动区域接触。 一个实施例具有至少一个门指的至少一端延伸到有源区的外部。 另一个实施例包括与所述至少一个源手指成一体的至少一个源极场板。 所述至少一个源极场板在所述至少一个栅极指状物上延伸，所述至少一个栅极指包括有源区域外部的部分。 任何一个实施例还可以包括倾斜门脚，以进一步改善高压操作。