公开(公告)号：US5072312A

公开(公告)日：1991-12-10

申请号：US310960

申请日：1989-02-16

申请人： Herbert Schwarzbauer ,  Reinhold Kuhnert

发明人： Herbert Schwarzbauer ,  Reinhold Kuhnert

IPC分类号： H01L21/332 ,  H01L29/06 ,  H01L29/74

CPC分类号： H01L29/66363 ,  H01L29/0615 ,  H01L29/74 ,  Y10S438/965

摘要： A thyristor having high forward and reverse blocking capability and a method for the manufacture thereof. The thyristor has a p-base region separated from an n-base lying therebelow by a first planar pn-junction that very gradually approaches an upper side of the thyristor at its edge region. A p-emitter is composed of a p-conductive layer inserted at the under side of the thyristor that is continued in a p-conductive lateral zone that laterally limits the thyristor and extends from an under side up to the upper side. This p-conductive lateral zone merges into a p-conductive semiconductor zone that is inserted at the upper side of the thyristor. This latter p-conductive semiconductor zone extends from a part of the lateral zone lying at the upper side, proceeds along the upper side of the thyristor in the direction toward the edge termination of the p-base region, and is separated from the n-base by a second planar pn-junction that very gradually approaches the upper side.

摘要翻译： 具有高正向和反向阻断能力的晶闸管及其制造方法。 晶闸管具有与其下面的n基极分离的p基区域，其中第一平面pn结在其边缘区域处非常缓慢地接近晶闸管的上侧。 p型发射极由插入在晶闸管的下侧的p型导体层构成，该导电层在p导电侧向区域中连续，该p导电侧向区域侧向限制晶闸管并且从下侧向上延伸。 该p导电横向区域合并到插入晶闸管上侧的p导电半导体区域中。 后一个p导电半导体区域从位于上侧的横向区域的一部分延伸，沿着朝向p基区域的边缘终止的方向沿着晶闸管的上侧行进，并且与n- 通过非常接近上侧的第二平面pn结接头。

公开(公告)号：US5506452A

公开(公告)日：1996-04-09

申请号：US287781

申请日：1994-08-09

申请人： Reinhold Kuhnert

发明人： Reinhold Kuhnert

IPC分类号： H01L21/52 ,  H01L23/051 ,  H01L23/48 ,  H01L23/492 ,  H01L25/04 ,  H01L25/18 ,  H01L29/54 ,  H01L23/18

CPC分类号： H01L23/4928 ,  H01L23/051 ,  H01L23/4922 ,  H01L24/72 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/19043

摘要： A power semiconductor component includes a semiconductor body having anode and cathode sides and a given thermal coefficient of expansion. Contact electrodes are each disposed on a respective one of the anode and cathode sides and are made of a metal having a thermal coefficient of expansion differing from the given thermal coefficient of expansion. At least two contact surfaces are disposed one above the other under pressure, between the semiconductor body and the contact electrodes. At least one of the contact surfaces has a layer formed of an amorphous carbon-metal compound.

摘要翻译： 功率半导体元件包括具有阳极和阴极侧面以及给定的热膨胀系数的半导体本体。 接触电极各自设置在阳极侧和阴极侧的相应一个上，并且由具有与给定的热膨胀系数不同的膨胀热膨胀系数的金属制成。 在半导体本体和接触电极之间的压力下，至少两个接触表面一个在另一个之上设置。 至少一个接触表面具有由无定形碳 - 金属化合物形成的层。

公开(公告)号：US5300458A

公开(公告)日：1994-04-05

申请号：US22878

申请日：1993-02-25

申请人： Reinhold Kuhnert ,  Peter Tuerkes

发明人： Reinhold Kuhnert ,  Peter Tuerkes

IPC分类号： H01L23/58 ,  H01L23/36 ,  H01L23/373 ,  H01L21/60

CPC分类号： H01L23/36 ,  H01L23/3736 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/32245 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/83048 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/351

摘要： A semiconductor component comprises a semiconductor body that has its underside secured on a metallic substrate and is joined at its upper side to an auxiliary member composed of a material having great thermal conductivity and which serves as a heat buffer. This auxiliary member increases the loadability of the semiconductor component with respect to additional, thermal stressing pulses.

摘要翻译： 半导体部件包括半导体本体，其下侧固定在金属基板上，并且在其上侧连接到由具有高导热性并且用作热缓冲器的材料构成的辅助部件。 该辅助部件相对于额外的热应力脉冲增加了半导体部件的负载能力。

公开(公告)号：US5169790A

公开(公告)日：1992-12-08

申请号：US774605

申请日：1991-10-10

申请人： Peter Tuerkes ,  Reinhold Kuhnert

发明人： Peter Tuerkes ,  Reinhold Kuhnert

IPC分类号： H01L31/0352 ,  H01L31/111

CPC分类号： H01L31/1113 ,  H01L31/03529 ,  Y02E10/50 ,  Y10S438/965

摘要： A thyristor having low-reflection light-triggering structure. In a light-triggerable thyristor, pyramidal depressions are formed in a simple manner by a preferred etching method, being formed in the region of the photon entry face in order to produce a low-reflection light-triggering structure. Incident light is absorbed in the pyramidal depressions largely independent of the wavelength of the incident light and nearly completely. The low-reflection light-triggering structure thereby produced can be formed with relatively little outlay. This is especially true when a defined overhead ignition voltage is simultaneously set by the pyramidal depressions.

摘要翻译： 具有低反射光触发结构的晶闸管。 在光触发晶闸管中，通过优选的蚀刻方法以简单的方式形成锥形凹陷，形成在光子入射面的区域中，以便产生低反射光触发结构。 入射光在锥形凹陷中被吸收，其主要与入射光的波长几乎完全相同。 由此产生的低反射光触发结构可以以相对较少的花费形成。 当定义的顶点点火电压由金字塔形凹陷同时设定时尤其如此。